Comparison of coplanar 60-GHz low-noise amplifiers based on a GaAs PM-HEMT technology

1998 ◽  
Vol 8 (11) ◽  
pp. 396-398 ◽  
Author(s):  
A. Bessemoulin ◽  
L. Verweyen ◽  
H. Massler ◽  
W. Reinert ◽  
G. Alquie ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
60 Ghz

Design of 60-GHz Low-Noise Amplifiers With Low NF and Robust ESD Protection in 65-nm CMOS

2013 ◽  
Vol 61 (1) ◽  
pp. 553-561 ◽  
Author(s):  
Ming-Hsien Tsai ◽  
Shawn S. H. Hsu ◽  
Fu-Lung Hsueh ◽  
Chewn-Pu Jou ◽  
Tzu-Jin Yeh
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
60 Ghz ◽  
Esd Protection

60-GHz GaAs MMIC low-noise amplifiers

2003 ◽  
Author(s):  
H.-L.A. Hung ◽  
T.T. Lee ◽  
F.R. Phelleps ◽  
J.F. Singer ◽  
J.F. Bass ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
60 Ghz

scholarly journals Computation of Constant Gain and NF Circles for 60 GHz Ultra-low noise Amplifiers

2021 ◽  
Vol 3 (3) ◽  
pp. 146-156
Author(s):  
Christina Gnanamani ◽  
Shanthini Pandiaraj
Keyword(s):  
Noise Figure ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Communication Link ◽  
60 Ghz ◽  
Output Impedance ◽  
Maximum Value ◽  
Input Module ◽  
Ultra Low Noise ◽  
Constant Source

Wireless communication is a constantly evolving and forging domain. The action of the RF input module is critical in the radio frequency signal communication link. This paper discusses the design of a RF high frequency transistor amplifier for unlicensed 60 GHz applications. The Transistor used for analysis is a FET amplifier, operated at 60GHz with 10 mA at 6.0 V. The simulation of the amplifier is made with the Open Source Scilab 6.0.1 console software. The MESFET is biased such that Sll = 0.9<30°, S12 = 0.21<-60°, S21= 2.51<-80°, and S22 = 0.21<-15o. It is found that the transistor is unconditionally stable and hence unilateral approximation can be employed. With these assumptions, the maximum value of source gain of the amplifier is found to be at 7.212 dB and the various constant source gain circles and noise figure circles are computed. The transistor has the following noise parameters: Fmin = 3 dB, Rn = 4 Ω, and Γopt = 0.485<155°. The amplifier is designed to have an input and output impedance of 50 ohms which is considered as the reference impedance.

Hardware efficient receiver for low-cost ultra-high rate 60 GHz wireless communications

2011 ◽  
Vol 3 (2) ◽  
pp. 121-129 ◽  
Author(s):  
Ahmet Çağrı Ulusoy ◽  
Gang Liu ◽  
Andreas Trasser ◽  
Hermann Schumacher
Keyword(s):  
Communication Systems ◽  
High Speed ◽  
Low Cost ◽  
Intermediate Frequency ◽  
Low Noise ◽  
High Rate ◽  
Low Noise Amplifiers ◽  
Range Data ◽  
60 Ghz ◽  
5 Ghz

This paper presents a hardware efficient receiver architecture, to be used in low-cost, ultra-high rate 60 GHz wireless communication systems. The receiver utilizes a simple, feed-forward carrier recovery concept, performing phase and frequency synchronization in the analog domain. This enables 1-bit baseband processing without a need of ultra-high speed and high precision analog-to-digital conversion, offering a strong simplification of the system architecture and comparatively low power consumption. In a first prototype implementation, the receiver is realized in a low-cost SiGe technology as two separate ICs: the 60 GHz/5 GHz downconverter, and the intermediate frequency synchronous demodulator. The simple synchronous reception concept is experimentally validated for up to 3.5 Gbit/s data rate, which constituted the limit of the existing experimental setup. Furthermore, the downconverter demonstrates that low-cost technologies (fop/fmax ~ 0.75) can be used to realize short-range data links at 60 GHz, with low-noise amplifiers in a more performant technology as needed.

60 GHz low noise amplifiers with 1 kV CDM protection in 40 nm LP CMOS

2012 ◽  
Author(s):  
Kuba Raczkowski ◽  
Steven Thijs ◽  
Jen-Chou Tseng ◽  
Tzu-Heng Chang ◽  
Ming-Hsiang Song ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers ◽  
60 Ghz

ИССЛЕДОВАНИЕ НИТРИД-ГАЛЛИЕВЫХ МАЛОШУМЯЩИХ УСИЛИТЕЛЕЙ ПРИ КРИОГЕННЫХ ТЕМПЕРАТУРАХ

2020 ◽  
Vol 96 (3s) ◽  
pp. 347-352
Author(s):  
Д.Г. Алипа ◽  
В.В. Краснов ◽  
В.М. Минненбаев ◽  
А.В. Редька ◽  
Ю.В. Федоров
Keyword(s):  
Remote Sensing ◽  
Gallium Nitride ◽  
Millimeter Wave ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Cryogenic Temperatures ◽  
Space Systems ◽  
Earth Remote Sensing ◽  
Hydrogen Level

В статье представлены результаты исследования возможности применения при криогенных температурах водородного уровня дискретных приборов и монолитных схем на основе нитрида галлия в составе малошумящих усилителей сантиметрового и миллиметрового диапазона длин волн для приемных устройств систем дистанционного зондирования Земли из космоса и в составе криогенных комплексов наблюдения космического пространства. The article presents the results of the research on the possibility of using discrete devices and gallium nitride monolithic circuits at the cryogenic temperatures of hydrogen level as part of low-noise amplifiers of centimeter and millimeter-wave bands used in receivers of Earth remote sensing space systems and in cryogenic systems for space observation.

60 GHz-Band Low-Noise Amplifier

2017 ◽  
Vol 26 (05) ◽  
pp. 1750075 ◽  
Author(s):  
Najam Muhammad Amin ◽  
Lianfeng Shen ◽  
Zhi-Gong Wang ◽  
Muhammad Ovais Akhter ◽  
Muhammad Tariq Afridi
Keyword(s):  
Transmission Line ◽  
Quality Factor ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Constant Current ◽  
60 Ghz ◽  
Frequency Range ◽  
Constant Current Density ◽  
Chip Area

This paper presents the design of a 60[Formula: see text]GHz-band LNA intended for the 63.72–65.88[Formula: see text]GHz frequency range (channel-4 of the 60[Formula: see text]GHz band). The LNA is designed in a 65-nm CMOS technology and the design methodology is based on a constant-current-density biasing scheme. Prior to designing the LNA, a detailed investigation into the transistor and passives performances at millimeter-wave (MMW) frequencies is carried out. It is shown that biasing the transistors for an optimum noise figure performance does not degrade their power gain significantly. Furthermore, three potential inductive transmission line candidates, based on coplanar waveguide (CPW) and microstrip line (MSL) structures, have been considered to realize the MMW interconnects. Electromagnetic (EM) simulations have been performed to design and compare the performances of these inductive lines. It is shown that the inductive quality factor of a CPW-based inductive transmission line ([Formula: see text] is more than 3.4 times higher than its MSL counterpart @ 65[Formula: see text]GHz. A CPW structure, with an optimized ground-equalizing metal strip density to achieve the highest inductive quality factor, is therefore a preferred choice for the design of MMW interconnects, compared to an MSL. The LNA achieves a measured forward gain of [Formula: see text][Formula: see text]dB with good input and output impedance matching of better than [Formula: see text][Formula: see text]dB in the desired frequency range. Covering a chip area of 1256[Formula: see text][Formula: see text]m[Formula: see text]m including the pads, the LNA dissipates a power of only 16.2[Formula: see text]mW.

III-V HEMTs for Cryogenic Low Noise Amplifiers

2020 ◽  
Author(s):  
J. Grahn ◽  
E. Cha ◽  
A. Pourkabirian ◽  
J. Stenarson ◽  
N. Wadefalk
Keyword(s):  
Low Noise ◽  
Low Noise Amplifiers
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