Permittivity and Permeability Measurement of Spin-Spray Deposited Ni-Zn-Ferrite Thin Film Sample

2012 ◽  
Vol 48 (11) ◽  
pp. 4085-4088 ◽  
Author(s):  
Liu Chao ◽  
Anjali Sharma ◽  
Mohammed N. Afsar ◽  
Ogheneyunume Obi ◽  
Ziyao Zhou ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Sample ◽  
Film Sample ◽  
Permeability Measurement ◽  
Zn Ferrite ◽  
Permittivity And Permeability

Initial Contact Behavior of Nanograined Ni-25at.%Al Film During Nanoindentation

2004 ◽  
Vol 841 ◽  
Author(s):  
Han. Li ◽  
Alfonso H. W. Ngan
Keyword(s):  
Thin Film ◽  
Repeated Loading ◽  
Initial Contact ◽  
Al Alloy ◽  
Alloy Thin Film ◽  
Thin Film Sample ◽  
Film Sample ◽  
Microscopy Imaging ◽  
Contact Stage ◽  
Average Grain Size

ABSTRACTCyclic indentation was performed on standard fused quartz, single crystal Ni3Al (111) and nanocrystalline Ni-25at. %Al alloy thin film with average grain size of a few nanometers. For the thin film sample, it is found the scattering of the effective Young's modulus at small depths goes far beyond the expectation from effects due to surface roughness alone. Three representative deformation mechanisms during initial contact stage were identified to be responsible for the scattering with the assistance of immediate pre and post indentation atomic force microscopy imaging. Furthermore, repeated loading was found to stiffen the thin film sample, but not the bulk ones.

Silver Film Atomic Oxygen Sensors

1972 ◽  
Vol 50 (14) ◽  
pp. 1676-1681 ◽  
Author(s):  
Ronald J. Thomas ◽  
Doran J. Baker
Keyword(s):  
Thin Film ◽  
Atomic Oxygen ◽  
Silver Film ◽  
Surface Recombination ◽  
Oxide Thickness ◽  
Oxygen Sensors ◽  
Recombination Coefficient ◽  
Thin Film Sample ◽  
Film Sample ◽  
Initial Oxidation

Measurements indicate that the initial oxidation rate of a thin film of silver is linearly proportional to the atomic oxygen flux; however, the oxidation coefficient is dependent upon the technique for depositing and chemically reducing the thin film. A model is developed relating the conductance of a thin-film sample to its oxidation. The measurements and the model indicate that the silver film is very promising as a sensor of upper atmospheric atomic oxygen. The model also indicates that the surface recombination coefficient of atomic oxygen depends on the oxide thickness as well as the flux.

Study of Different Dislocations in YBCO Thin Film

2003 ◽  
Vol 17 (18n20) ◽  
pp. 3530-3533
Author(s):  
S. X. Wang ◽  
W. L. Liu ◽  
S. H. Han ◽  
H. Zhang
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Screw Dislocation ◽  
Threading Dislocations ◽  
Thin Film Sample ◽  
Ybco Thin Film ◽  
Film Sample ◽  
X Ray Diffraction ◽  
X Ray ◽  
Out Of Plane

A series thin film sample of YBCO with different value of Tc was studied by high-resolution X-ray diffraction. Two different threading dislocations, the in-plane twist and the out-of-plane tilt, were studied carefully. It is found that the value of Tc is much more sensitive to the substrate normal tilt than to the in-plane twist. Dislocations with different Burgers vectors are suggested to exert different influence on the value of Tc of the YBCO thin film. The screw dislocation in the film is strongly influences the properties of the YBCO.

Mechanical properties of helically perforated thin films

2006 ◽  
Vol 21 (5) ◽  
pp. 1101-1105 ◽  
Author(s):  
S.P. Fernando ◽  
A.L. Elias ◽  
M.J. Brett
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Finite Element Analysis ◽  
Pitch Angle ◽  
Film Structure ◽  
Thin Film Sample ◽  
Film Sample ◽  
Element Analysis ◽  
Nanoindentation Measurement

The mechanical behavior of a helically perforated thin film structure was simulated by finite element analysis. The validity of the results was confirmed by comparison to a nanoindentation measurement performed on a nickel helically perforated thin film sample. It was found that variation of the helical pitch angle from 35° to 70° resulted in a change of 1.5 times in the elastic modulus. Since the fabrication process used to create the actual samples allows for variation of the pitch angle, this result may enable the tailoring of materials for use in micro- and nanoscale devices.

Microstructure of the New Route Wire Fabrication of V3Ga Compound Superconducting Wire Using High Ga Content Cu-Ga/V Precursor Composite Material

2012 ◽  
Vol 706-709 ◽  
pp. 677-680
Author(s):  
Satoshi Murakami ◽  
Manabu Mizutani ◽  
Kenji Matsuda ◽  
Katsuhiko Nishimura ◽  
Tokimasa Kawabata ◽  
...  
Keyword(s):  
Thin Film ◽  
Cross Section ◽  
Superconducting Property ◽  
The Other ◽  
Thin Film Sample ◽  
Film Sample ◽  
Superconducting Wire ◽  
Wire Fabrication ◽  
Powder In Tube ◽  
Ga Content

Our co-worker, Hishinuma et. al. has established a new route Powder-In-Tube (PIT) process using a high Ga content Cu-Ga compound in order to improve the superconducting property of the V3Ga compound wire. In this study, we investigated microstructure of this high Ga content Cu-Ga/V composite superconducting wire. The different contrasts of matrix, V-Ga phase and Cu-Ga core were observed by SEM observation in cross section of 19 multifilamentary wire. And V-Ga phase was confirmed by SEM mapping. The area fraction of V-Ga phase increased when Ga content increased from 30% to 50%. Thin film sample with V-Ga phase for TEM was fabricated by FIB and observed by TEM in detail. Selected area diffraction pattern was obtained for V matrix, V-Ga phase and Cu-Ga core. The ratio of V to Ga for V-Ga phase was probably V3Ga according to the EDS result. There was a linear interface between V matrix and V-Ga phase, while the interface between Cu-Ga core and V-Ga phase was not linear. On the other hand, there were some granular grains observed in V-Ga phase wear Cu-Ga core.

Nanosecond Resolved Temperature Measurements Following Pulsed Laser Irradiation

1988 ◽  
Vol 100 ◽  
Author(s):  
Michael O. Thompson
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Thin Film Sample ◽  
Absolute Accuracy ◽  
Film Sample ◽  
Velocity Measurements ◽  
Interface Position ◽  
Pulsed Laser Irradiation

ABSTRACTA transient resistance technique has been developed which allows monitoring the temperature of a thin film sample at a fixed depth from the surface following pulsed laser irradiation. The technique utilizes the temperature dependence of a thin, electrically insulated, semiconducting or metallic layer. Temperature determinations with nanosecond resolution, an absolute accuracy of ±50 K, and a relative accuracy of ±5 K are demonstrated. Combined with simultaneous interface position and velocity measurements, the undercooling at the interface during rapid solidification may be obtained. Preliminary results using this technique during the solidification of thin Ge films are presented.

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