Application of Focused Ion Beam Technique to Thin-Film Sample Preparation for Auger Electron Spectroscopy-Sputter Depth Profiling of Deep Interfaces

2008 ◽  
Vol 15 (1) ◽  
pp. 40-49
Author(s):  
Michiko Satoh ◽  
Yoshihiko Seyama ◽  
Toru Itakura
Keyword(s):  
Thin Film ◽  
Sample Preparation ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Depth Profiling ◽  
Thin Film Sample ◽  
Film Sample ◽  
Beam Technique

Focused Ion Beam Grounding to Alleviate Sample Charging for Scanning Auger Electron Spectroscopy

2006 ◽  
Author(s):  
Carolyn F. H. Gondran ◽  
Emily Morales
Keyword(s):  
Electron Beam ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Contrast Analysis ◽  
Voltage Contrast

Abstract It is shown that a focused ion beam (FIB) grounding technique can be used to alleviate charge buildup on samples that would otherwise charge in the electron beam to the point where analysis by Auger electron spectroscopy (AES) was limited or impossible. FIB grounding alleviates the sample charging and permits AES analysis. The grounding technique is quick, easy and well understood as it has been used extensively for voltage-contrast analysis. The technique is shown to be useful for enabling analysis on electrically isolated conductive features as well as insulating samples.

An Auger Electron Spectroscopy (AES) Investigation into the Effect Annealing on the Phase Distribution of Ion Implanted Oxygen in Silicon

1983 ◽  
Vol 25 ◽  
Author(s):  
C G Tuppen ◽  
G J Davies ◽  
M R Taylor ◽  
R Heckingbottom
Keyword(s):  
Electron Spectroscopy ◽  
Beam Energy ◽  
Auger Electron ◽  
Phase Distribution ◽  
Auger Spectrum ◽  
Ion Beam ◽  
Depth Profiling ◽  
High Dose ◽  
High Temperature Annealing ◽  
Small Precipitate

ABSTRACTBuried oxide layers, formed by high dose ion implantation, have been examined using Auger depth profiling. The phase distribution of oxygen in the wings of the implant profile and effects of high temperature annealing, have been investigated. Ion beam induced cascade mixing, which occurs during sputter etching, limits the minimum detectable size of SiO2 precipitates. However, it is possible to minimise this effect by reducing the ion beam energy. At very small precipitate sizes (<100Å) silicon atoms at the edge of the precipitate particles will make a major contribution to the Si KLL Auger spectrum. A previously reported theoretical model has been expanded to take account of this phenomenon.

Gold/Niobium Thin Film Metallizations for GaAs Devices and Circuits

2001 ◽  
Vol 695 ◽  
Author(s):  
Robert Esser ◽  
Aris Christou
Keyword(s):  
Thin Film ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Devices ◽  
Auger Electron Spectroscopy Depth ◽  
Interdiffusion Coefficients

ABSTRACTA refractory metallization of Au/Nb is proposed for use in first level metallization of GaAs devices. The diffusion and reaction kinetics are explored using sheet resistance measurements, along with X-ray diffraction and Auger electron spectroscopy depth profiling. The interdiffusion coefficients are reported. Diodes are fabricated using Nb/Au metallization and characterized

Nanocomposite Polyurethane Foams Via POSS Blends

2002 ◽  
Vol 733 ◽  
Author(s):  
Brock McCabe ◽  
Steven Nutt ◽  
Brent Viers ◽  
Tim Haddad
Keyword(s):  
High Temperature ◽  
Sample Preparation ◽  
Room Temperature ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Polyurethane Foams ◽  
Development Projects ◽  
Polymer Systems ◽  
Polyurethane Resin ◽  
Military Development

AbstractPolyhedral Oligomeric Silsequioxane molecules have been incorporated into a commercial polyurethane formulation to produce nanocomposite polyurethane foam. This tiny POSS silica molecule has been used successfully to enhance the performance of polymer systems using co-polymerization and blend strategies. In our investigation, we chose a high-temperature MDI Polyurethane resin foam currently used in military development projects. For the nanofiller, or “blend”, Cp7T7(OH)3 POSS was chosen. Structural characterization was accomplished by TEM and SEM to determine POSS dispersion and cell morphology, respectively. Thermal behavior was investigated by TGA. Two methods of TEM sample preparation were employed, Focused Ion Beam and Ultramicrotomy (room temperature).

Sign in / Sign up

Export Citation Format

Share Document