Spin transfer effect in magnetic tunnel junction with a nano-current-channel Layer in free layer

2005 ◽  
Vol 41 (10) ◽  
pp. 2612-2614 ◽  
Author(s):  
Hao Meng ◽  
Jian-Ping Wang
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Transfer Effect ◽  
Spin Transfer ◽  
Free Layer ◽  
Current Channel ◽  
Channel Layer

scholarly journals Zero-field spin transfer oscillators based on magnetic tunnel junction having perpendicular polarizer and planar free layer

AIP Advances ◽  
2016 ◽  
Vol 6 (12) ◽  
pp. 125305 ◽  
Author(s):  
Bin Fang ◽  
Jiafeng Feng ◽  
Huadong Gan ◽  
Roger Malmhall ◽  
Yiming Huai ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer ◽  
Zero Field ◽  
Free Layer

Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices

2010 ◽  
Vol 97 (24) ◽  
pp. 242510 ◽  
Author(s):  
H. Liu ◽  
D. Bedau ◽  
D. Backes ◽  
J. A. Katine ◽  
J. Langer ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer ◽  
Ultrafast Switching

Double Magnetic Tunnel Junction with switchable assistance layer for improved spin transfer torque magnetic memory performance

Nanoscale ◽  
2021 ◽  
Author(s):  
Daniel Sanchez Hazen ◽  
Stephane Auffret ◽  
Isabelle Joumard ◽  
Laurent Vila ◽  
Liliana Buda-Prejbeanu ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Memory Performance ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Magnetic Memory ◽  
Memory Cells ◽  
Experimental Demonstration

This paper reports the first experimental demonstration of a new concept of double magnetic tunnel junction comprising a magnetically switchable assistance layer. These double junctions are used as memory cells...

scholarly journals Magnetization Dynamics in a Perpendicular Anisotropy Free Layer under a Spin Torque Effect with Crossed Polarization

2020 ◽  
Vol 25 (1) ◽  
pp. 54
Author(s):  
Nafeesa Rahman ◽  
Rachid Sbiaa
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Film Plane ◽  
Spin Torque ◽  
Spin Angular Momentum ◽  
Perpendicular Anisotropy ◽  
Free Layer ◽  
Magnetization Dynamics ◽  
Magnetization Direction ◽  
Spin Polarized

The transfer of spin angular momentum from a spin polarized current provides an efficient way of reversing the magnetization direction of the free layer of the magnetic tunnel junction (MTJ), and while faster reversal will reduce the switching energy, this in turn will lead to low power consumption. In this work, we propose a design where a spin torque oscillator (STO) is integrated with a conventional magnetic tunnel junction (MTJ) which will assist in the ultrafast reversal of the magnetization of the free layer of the MTJ. The structure formed (MTJ stacked with STO), will have the free layer of the MTJ sandwiched between two spin polarizer layers, one with a fixed magnetization direction perpendicular to film plane (main static polarizer) and the other with an oscillatory magnetization (dynamic polarizer). The static polarizer is the fixed layer of the MTJ itself and the dynamic polarizer is the free layer of the STO.

scholarly journals Voltage Controlled Domain Wall Motion based Neuron and Stochastic Magnetic Tunnel Junction Synapse for Neuromorphic Computing Applications

2021 ◽  
Author(s):  
Aijaz Lone ◽  
Selma Amara ◽  
Hossein Fariborzi
Keyword(s):  
Domain Wall ◽  
Tunnel Junction ◽  
Thermal Noise ◽  
Wall Motion ◽  
Magnetic Tunnel Junction ◽  
Domain Wall Motion ◽  
Spin Orbit ◽  
Free Layer ◽  
Digit Recognition ◽  
Transport Studies

The present work discusses the proposal of a spintronic neuromorphic system with spin orbit torque driven domain wall motion-based neuron and synapse. We propose a voltage-controlled magnetic anisotropy domain wall motion based magnetic tunnel junction neuron. We investigate how the electric field at the gate (pinning site), generated by the voltage signals from pre-neurons, modulates the domain wall motion, which reflects in the non-linear switching behaviour of neuron magnetization. For the implementation of synaptic weights, we propose 3-terminal MTJ with stochastic domain wall motion in the free layer. We incorporate intrinsic pinning effects by creating triangular notches on the sides of the free layer. The pinning of domain wall and intrinsic thermal noise of device lead to the stochastic behaviour of domain wall motion. The control of this stochasticity by the spin orbit torque is shown to realize the potentiation and depression of the synaptic weight. The micromagnetics and spin transport studies in synapse and neuron are carried out by developing a coupled micromagnetic Non-Equilibrium Green’s Function (<i>MuMag-NEGF</i>) model. The minimization of the writing current pulse width by leveraging the thermal noise and demagnetization energy is also presented. Finally, we discuss the implementation of digit recognition by the proposed system using a spike time dependent algorithm.

Reliable majority voter based on spin transfer torque magnetic tunnel junction device

2016 ◽  
Vol 52 (1) ◽  
pp. 47-49 ◽  
Author(s):  
P.F. Butzen ◽  
M. Slimani ◽  
Y. Wang ◽  
H. Cai ◽  
L.A.B. Naviner
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Junction Device ◽  
Majority Voter
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