Diagnostic of silicon carbide surge arresters using leakage current measurements

2011 ◽  
Vol 9 (5) ◽  
pp. 761-766 ◽  
Author(s):  
Arnaldo Gakiya Kanashiro ◽  
Milton Zanotti ◽  
Paulo Futoshi Obase ◽  
Wilson Roberto Bacega
Keyword(s):  
Silicon Carbide ◽  
Leakage Current ◽  
Surge Arresters

scholarly journals Extracting the Resistive Current Component from a Surge Arrester’s Leakage Current without Voltage Reference

Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1257
Author(s):  
Vid Vončina ◽  
Jože Pihler ◽  
Miro Milanovič
Keyword(s):  
Leakage Current ◽  
Data Transfer ◽  
Electronic Device ◽  
Theoretical Background ◽  
Voltage Reference ◽  
Current Component ◽  
Surge Arresters ◽  
Transfer Unit ◽  
Control Centre ◽  
Resistive Component

This article presents the development of the theoretical background and the design of an electronic device for monitoring the condition of a gapless Metal Oxide Surge Arrester (MOSA). The device is intended to be used online. Because of the inaccessibility and possible remote location of most surge arresters, it is equipped with a communication system, allowing for the device to convey the measurement of the surge arrester characteristics under any conditions. It is possible to determine the condition of the MOSA by gathering measurements of the surge arrester’s resistive component of leakage current. The leakage current information is sent via data transfer unit to a server and, after interpretation, will be forwarded to the authorised personnel through the surge arrester control centre.

scholarly journals 10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

Energies ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 4566 ◽  
Author(s):  
Asllani ◽  
Morel ◽  
Phung ◽  
Planson
Keyword(s):  
Silicon Carbide ◽  
Leakage Current ◽  
Voltage Drop ◽  
Forward Bias ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Pulse Switching ◽  
Turn On ◽  
Forward Voltage Drop ◽  
Fabrication And Characterization

This paper presents the design, fabrication and characterization results obtained on the last generation (third run) of SiC 10 kV PiN diodes from SuperGrid Institute. In forward bias, the 59 mm2 diodes were tested up to 100 A. These devices withstand voltages up to 12 kV on wafer (before dicing, packaging) and show a low forward voltage drop at 80 A. The influence of the temperature from 25 °C to 125 °C has been assessed and shows that resistivity modulation occurs in the whole temperature range. Leakage current at 3 kV increases with temperature, while being three orders of magnitude lower than those of equivalent Si diodes. Double-pulse switching tests reveal the 10 kV SiC PiN diode’s outstanding performance. Turn-on dV/dt and di/dt are −32 V/ns and 311 A/µs, respectively, whereas turn-off dV/dt and di/dt are 474 V/ns and −4.2 A/ns.

3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring

2011 ◽  
Vol 679-680 ◽  
pp. 555-558 ◽  
Author(s):  
Konstantin Vassilevski ◽  
Irina P. Nikitina ◽  
Alton B. Horsfall ◽  
Nicolas G. Wright ◽  
C. Mark Johnson
Keyword(s):  
Silicon Carbide ◽  
Leakage Current ◽  
Schottky Diodes ◽  
Schottky Contacts ◽  
Blocking Layer ◽  
Donor Concentration ◽  
Ion Etching ◽  
Ambient Temperatures ◽  
Heavily Doped ◽  
The Impact

3.3 kV rated 4H-SiC diodes with nickel monosilicide Schottky contacts and 2-zone JTE regions were fabricated on commercial epitaxial wafers having a 34 m thick blocking layer with donor concentration of 2.2×1015 cm-3. The diodes were fabricated with and without additional field stop rings to investigate the impact of practically realizable stopper rings on the diode blocking characteristics. The field stop ring was formed by reactive ion etching of heavily doped epitaxial capping layer. The diodes with field stop rings demonstrated significantly higher yield and reduction of reverse leakage current. The diodes demonstrated blocking voltages in excess of 4.0 kV and very low change of leakage current at ambient temperatures up to 200 °C.

High temperature silicon carbide MOSFETs with very low drain leakage current

1994 ◽  
Vol 30 (2) ◽  
pp. 170-171 ◽  
Author(s):  
T Billon ◽  
P. Lassagne ◽  
N. Bécourt ◽  
P. Morfouli ◽  
T. Ouisse ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Leakage Current

scholarly journals Artificial Neural Network Application for Thermal Image Based Condition Monitoring of Zinc Oxide Surge Arresters

2017 ◽  
Vol 7 (3) ◽  
pp. 593
Author(s):  
Novizon Novizon ◽  
Zulkurnain Abdul-Malek ◽  
Aulia Aulia
Keyword(s):  
Neural Network ◽  
Artificial Neural Network ◽  
Leakage Current ◽  
Thermal Image ◽  
Histogram Method ◽  
Good Tool ◽  
Third Harmonic ◽  
Surge Arresters ◽  
Long Time ◽  
Artificial Neural

<p>Manual analysis of thermal image for detecting defects and classifying of condition of surge arrester take a long time. Artificial neural network is good tool for predict and classify data. This study applied neural network for classify the degree of degradation of surge arrester. Thermal image as input of neural network was segmented using Otsu’s segmentation and histogram method to get features of thermal image. Leakage current as a target of supervise neural network was extracted and applied Fast Fourier Transform to get third harmonic of resistive leakage current. The classification results meet satisfaction with error about 3%.</p>

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