High temperature silicon carbide MOSFETs with very low drain leakage current

1994 ◽  
Vol 30 (2) ◽  
pp. 170-171 ◽  
Author(s):  
T Billon ◽  
P. Lassagne ◽  
N. Bécourt ◽  
P. Morfouli ◽  
T. Ouisse ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Leakage Current

High Temperature Capability of High Voltage 4H-SiC JBS

2012 ◽  
Vol 711 ◽  
pp. 124-128 ◽  
Author(s):  
Maxime Berthou ◽  
Philippe Godignon ◽  
Bertrand Vergne ◽  
Pierre Brosselard
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Leakage Current ◽  
High Voltage ◽  
Room Temperature ◽  
Operating Temperature ◽  
Reverse Current ◽  
Temperature Capability ◽  
Schottky Devices ◽  
Current Behaviour

This paper presents the high blocking capability of the 4H-SiC tungsten Schottky and junction barrier Schottky (JBS) diodes at room temperature as well as at high operating temperature. First, we present the design of the proposed devices and the process employed for their fabrication. In a second part, their forward and reverse characteristics at room temperature will be presented. Our rectifiers exhibit blocking capability up to 9kV at room temperature. Then, we investigate the reverse current behaviour at 5kV from room temperature to 250°C under vacuum. JBS and Schottky devices that are capable to block 8kV at room temperature, show leakage current inferior to 100µA at 250°C when reverse biased at 5kV. It confirms the capability of Silicon Carbide to produce devices capable of operation at temperatures and voltages above the Silicon limits.

Temperature dependence of high dielectric strength potting materials for medium voltage power modules

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000249-000255 ◽  
Author(s):  
Chad B. O'Neal ◽  
Brandon Passmore ◽  
Matthew Feurtado ◽  
Jennifer Stabach ◽  
Ty McNutt
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Leakage Current ◽  
Dielectric Strength ◽  
Simultaneous Recording ◽  
Operating Voltage ◽  
Power Module ◽  
Dielectric Thickness ◽  
Power Modules ◽  
High Dielectric

Voltage isolation inside power modules is paramount for functional and reliable operation. The dielectric potting materials are further stressed as the overall size of these modules is reduced due to size, weight, and cost considerations while the operating voltage of the modules continue to increase. Voltage ratings of silicon carbide device technologies will continue to increase above 6.5 kV into the tens of kilovolts in the future. Silicon carbide devices are also often operated at higher junction temperatures in order to take advantage of the high temperature capabilities of the material. As the module temperature increases, the dielectric strength of insulating materials in the module tend to decrease, which is a serious consideration for a compact power module operating at many kilovolts. A plurality of high temperature rated, high dielectric strength potting materials were tested for voltage breakdown and leakage current up to 30 kV and 250 °C. A range of different materials, both conventional and novel, were tested including silicones and parylene. Materials were selected with a dielectric strength greater than 500 V/mil, an operating temperature range of 200 °C or higher, and low hardness and modulus of elasticity with the intent of demonstrating the capability of blocking 20 kV or more in a reasonable thickness. A custom test setup was constructed to apply the voltage to test samples while measuring the breakdown voltage and simultaneous recording the leakage current. Test coupons were designed to provide a range of dielectric thicknesses over which to test the dielectric strength. Although voltage isolation may increase with increased dielectric thickness, the V/mil isolation rate often decreases. The performance degradation of these materials over temperature is plotted and deratings are suggested for use with medium voltages at operating temperatures above 175 °C.

DURALCAN F3S.xxS

Alloy Digest ◽  
1994 ◽  
Vol 43 (10) ◽  
Keyword(s):  
Fracture Toughness ◽  
Silicon Carbide ◽  
Compressive Strength ◽  
Aluminum Alloy ◽  
High Temperature ◽  
Base Alloy ◽  
Alloy Matrix ◽  
Reinforced Composite ◽  
Temperature Performance ◽  
Aluminum Alloy Matrix

Abstract Duralcan F3S.xxS is a heat treatable aluminum alloy-matrix gravity composite. The base alloy is similar to Aluminum 359 (Alloy Digest Al-188, July 1969); the discontinuously reinforced composite is silicon carbide. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and compressive strength as well as fracture toughness and fatigue. It also includes information on high temperature performance. Filing Code: AL-329. Producer or source: Alcan Aluminum Corporation.

Silicon Carbide Die Attach Scheme for 500°C Operation

2000 ◽  
Vol 622 ◽  
Author(s):  
Liang-Yu Chen ◽  
Gary W. Hunter ◽  
Philip G. Neudeck
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electrical Resistance ◽  
Room Temperature ◽  
Semiconductor Devices ◽  
Single Crystal Silicon ◽  
Film Material ◽  
Crystal Silicon ◽  
Pure Alumina ◽  
Die Attach

ABSTRACTSingle crystal silicon carbide (SiC) has such excellent physical, chemical, and electronic properties that SiC based semiconductor electronics can operate at temperatures in excess of 600°C well beyond the high temperature limit for Si based semiconductor devices. SiC semiconductor devices have been demonstrated to be operable at temperatures as high as 600°C, but only in a probe-station environment partially because suitable packaging technology for high temperature (500°C and beyond) devices is still in development. One of the core technologies necessary for high temperature electronic packaging is semiconductor die-attach with low and stable electrical resistance. This paper discusses a low resistance die-attach method and the results of testing carried out at both room temperature and 500°C in air. A 1 mm2 SiC Schottky diode die was attached to aluminum nitride (AlN) and 96% pure alumina ceramic substrates using precious metal based thick-film material. The attached test die using this scheme survived both electronically and mechanically performance and stability tests at 500°C in oxidizing environment of air for 550 hours. The upper limit of electrical resistance of the die-attach interface estimated by forward I-V curves of an attached diode before and during heat treatment indicated stable and low attach-resistance at both room-temperature and 500°C over the entire 550 hours test period. The future durability tests are also discussed.

New Generation of SiC Based Biodevices Implemented on 4” Wafers

2010 ◽  
Vol 645-648 ◽  
pp. 1097-1100 ◽  
Author(s):  
Phillippe Godignon ◽  
Iñigo Martin ◽  
Gemma Gabriel ◽  
Rodrigo Gomez ◽  
Marcel Placidi ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Silicon Carbide ◽  
High Temperature ◽  
Temperature Sensors ◽  
Biomedical Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
New Generation ◽  
Growth Technology ◽  
Biosensor Applications

Silicon Carbide is mainly used for power semiconductor devices fabrication. However, SiC material also offers attractive properties for other types of applications, such as high temperature sensors and biomedical devices. Micro-electrodes arrays are one of the leading biosensor applications. Semi-insulating SiC can be used to implement these devices, offering higher performances than Silicon. In addition, it can be combined with Carbon Nanotubes growth technology to improve the devices sensing performances. Other biosensors were SiC could be used are microfluidic based devices. However, improvement of SiCOI starting material is necessary to fulfill the typical requirements of such applications.

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