Neural-Network-Based Sensor Fusion of Optical Emission and Mass Spectroscopy Data for Real-Time Fault Detection in Reactive Ion Etching

2005 ◽  
Vol 52 (4) ◽  
pp. 1063-1072 ◽  
Author(s):  
S.J. Hong ◽  
G.S. May
Keyword(s):  
Neural Network ◽  
Fault Detection ◽  
Real Time ◽  
Sensor Fusion ◽  
Mass Spectroscopy ◽  
Reactive Ion Etching ◽  
Optical Emission ◽  
Spectroscopy Data ◽  
Ion Etching

scholarly journals Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1595
Author(s):  
Nomin Lim ◽  
Yeon Sik Choi ◽  
Alexander Efremov ◽  
Kwang-Ho Kwon
Keyword(s):  
Gas Phase ◽  
Photoelectron Spectroscopy ◽  
Reactive Ion Etching ◽  
Research Work ◽  
Optical Emission ◽  
Plasma Parameters ◽  
Ion Etching ◽  
Ar Plasma ◽  
Ar Gas ◽  
Etching Selectivity

This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.

Integrated real-time and run-to-run control of etch depth in reactive ion etching

1997 ◽  
Vol 10 (1) ◽  
pp. 121-130 ◽  
Author(s):  
M. Hankinson ◽  
T. Vincent ◽  
K.B. Irani ◽  
P.P. Khargonekar
Keyword(s):  
Real Time ◽  
Reactive Ion Etching ◽  
Etch Depth ◽  
Ion Etching
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