Failure mechanisms and fault classes for CMOS-compatible microelectromechanical systems

2002 ◽  
Author(s):  
A. Castillejo ◽  
D. Veychard ◽  
S. Mir ◽  
J.M. Karam ◽  
B. Courtois
Keyword(s):  
Microelectromechanical Systems ◽  
Failure Mechanisms ◽  
Cmos Compatible

scholarly journals A Little Knowledge

2003 ◽  
Vol 125 (10) ◽  
pp. 48-51
Author(s):  
Stuart B. Brown
Keyword(s):  
Power Consumption ◽  
Product Design ◽  
Crack Growth ◽  
Microelectromechanical Systems ◽  
Failure Mechanisms ◽  
Good News ◽  
Natural Evolution ◽  
Initial Product ◽  
Design Concepts

This article explains microelectromechanical systems (MEMS) design concepts that are under investigation for their application in different domains. MEMS provide numerous performance advantages. Miniaturization improves packaging and simplifies installation and maintenance. Power consumption can drop dramatically. Analysis shows that appropriate hermeticity and cleanliness remain a challenge, because sufficient contamination to introduce frequency drift may result from the migration of trace contaminants within a package itself. Many reliability issues apply to different MEMS in diverse ways. Work to date indicates that low-stress, hermetically packaged devices pose little concern about crack growth. The increasing maturity of MEMS and the emphasis on reliability represents good news for the industry, as it reflects the natural evolution from initial product design to fabrication technologies to long-term reliability. Despite current challenges, there is no fundamental constraint to reliability improvements as our knowledge of failure mechanisms and countermeasures increases.

scholarly journals On MEMS Reliability and Failure Mechanisms

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Daniel J. Fonseca ◽  
Miguel Sequera
Keyword(s):  
Health Care ◽  
Design Process ◽  
Manufacturing Process ◽  
Failure Modes ◽  
Microelectromechanical Systems ◽  
Failure Mechanisms ◽  
Production Cycle ◽  
Operating Cycle ◽  
Operational Failure ◽  
The Military

Microelectromechanical systems (MEMS) are a fast-growing field in microelectronics. MEMS are commonly used as actuators and sensors with a wide variety of applications in health care, automotives, and the military. The MEMS production cycle can be classified as three basic steps: (1) design process, (2) manufacturing process, and (3) operating cycle. Several studies have been conducted for steps (1) and (2); however, information regarding operational failure modes in MEMS is lacking. This paper discusses reliability in the context of MEMS functionality. It also presents a brief review of the most relevant failure mechanisms for MEMS.

Suppression of Stiction in MEMS

1999 ◽  
Vol 605 ◽  
Author(s):  
C. H. Mastrangelo
Keyword(s):  
Surface Treatment ◽  
Yield Loss ◽  
Microelectromechanical Systems ◽  
Failure Mechanisms ◽  
Failure Rates ◽  
Paper Briefly ◽  
Restoring Force ◽  
Device Failure ◽  
Dominant Source ◽  
Device Operation

AbstractStiction failures in microelectromechanical systems (MEMS) occur when suspended elastic members are unexpectedly pinned to their substrates. This type of device failure develops both in fabrication and during device operation, being a dominant source of yield loss in MEMS. Stiction failures require first a collapse force that brings the elastic member contact with the substrate followed by an intersolid adhesion sufficiently large to overcome the elastic restoring force. Stiction failure mechanisms have been studied extensively elsewhere [1]. This paper briefly summarizes these mechanisms in a the practical way. Over the last decade, stiction failure rates in MEMS have been minimized using a wide variety of processing, surface treatment, and physical schemes. An update of these methods is provided.

Exponential Conductivity Increase in Strained MoS2 via MEMS Actuation

MRS Advances ◽  
2019 ◽  
Vol 4 (38-39) ◽  
pp. 2135-2142
Author(s):  
A. Vidana ◽  
S. Almeida ◽  
M. Martinez ◽  
E. Acosta ◽  
J. Mireles ◽  
...  
Keyword(s):  
Experimental Data ◽  
Electrical Properties ◽  
Microelectromechanical Systems ◽  
The Body ◽  
Experimental Results ◽  
Force Balance ◽  
Balance Model ◽  
Standard Process ◽  
Conductivity Increase ◽  
Cmos Compatible

ABSTRACTIn this work, a poly-Si0.35Ge0.65 microelectromechanical systems (MEMS)- based actuator was designed and fabricated using a CMOS compatible standard process to specifically strain a bi-layered (2L) MoS2 flake and measure its electrical properties. Experimental results of the MEMS-TMDC device show an increase of conductivity up to three orders of magnitude by means of vertical actuation using the substrate as the body terminal. A force balance model of the MEMS-TMDC was used to determine the amount of strain induced in the MoS2 flake. Strains as high as 3.3% is reported using the model fitted to the experimental data.

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

Real-time cryo-deformation of polypropylene and impact-modified polypropylene in the transmission electron microscope

1993 ◽  
Vol 51 ◽  
pp. 892-893
Author(s):  
Robert C. Cieslinski ◽  
H. Craig Silvis ◽  
Daniel J. Murray
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Failure Mechanisms ◽  
Brittle Transition ◽  
Molded Part ◽  
Transmission Electron ◽  
Solvent Cast ◽  
The Impact ◽  
Annealed Copper ◽  
Dynamic Plane

An understanding of the mechanical behavior polymers in the ductile-brittle transition region will result in materials with improved properties. A technique has been developed that allows the realtime observation of dynamic plane stress failure mechanisms in the transmission electron microscope. With the addition of a cryo-tensile stage, this technique has been extented to -173°C, allowing the observation of deformation during the ductile-brittle transition.The technique makes use of an annealed copper cartridge in which a thin section of bulk polymer specimen is bonded and plastically deformed in tension in the TEM using a screw-driven tensile stage. In contrast to previous deformation studies on solvent-cast films, this technique can examine the frozen-in morphology of a molded part.The deformation behavior of polypropylene and polypropylene impact modified with EPDM (ethylene-propylene diene modified) and PE (polyethylene) rubbers were investigated as function of temperature and the molecular weight of the impact modifier.

Pressure Sensor Monolithically Integrating MEMS and CMOS-LSI with CMOS Compatible “Back-end-of-line MEMS processes”

2010 ◽  
Vol 130 (5) ◽  
pp. 170-175
Author(s):  
Tsukasa Fujimori ◽  
Hideaki Takano ◽  
Yuko Hanaoka ◽  
Yasushi Goto
Keyword(s):  
Pressure Sensor ◽  
Cmos Compatible

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

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