Beveled Fluoride Plasma Treatment for Vertical $\beta$ -Ga2O3 Schottky Barrier Diode With High Reverse Blocking Voltage and Low Turn-On Voltage

2020 ◽  
Vol 41 (3) ◽  
pp. 441-444 ◽  
Author(s):  
Zhuangzhuang Hu ◽  
Yuanjie Lv ◽  
Chunyong Zhao ◽  
Qian Feng ◽  
Zhaoqing Feng ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Turn On ◽  
Blocking Voltage ◽  
Reverse Blocking

scholarly journals The Effect of Bilayer Graphene Nanoribbon Geometry on Schottky-Barrier Diode Performance

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Meisam Rahmani ◽  
Razali Ismail ◽  
Mohammad Taghi Ahmadi ◽  
Mohammad Javad Kiani ◽  
Mehdi Saeidmanesh ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Bilayer Graphene ◽  
Graphene Nanoribbon ◽  
Voltage Characteristic ◽  
Schottky Barrier Diode ◽  
Current Voltage Characteristic ◽  
Turn On ◽  
Forward Current ◽  
Current Voltage ◽  
Bilayer Graphene Nanoribbon

Bilayer graphene nanoribbon is a promising material with outstanding physical and electrical properties that offers a wide range of opportunities for advanced applications in future nanoelectronics. In this study, the application of bilayer graphene nanoribbon in schottky-barrier diode is explored due to its different stacking arrangements. In other words, bilayer graphene nanoribbon schottky-barrier diode is proposed as a result of contact between a semiconductor (AB stacking) and metal (AA stacking) layers. To this end, an analytical model joint with numerical solution of carrier concentration for bilayer graphene nanoribbon in the degenerate and nondegenerate regimes is presented. Moreover, to determine the proposed diode performance, the carrier concentration model is adopted to derive the current-voltage characteristic of the device. The simulated results indicate a strong bilayer graphene nanoribbon geometry and temperature dependence of current-voltage characteristic showing that the forward current of the diode rises by increasing of width. In addition, the lower value of turn-on voltage appears as the more temperature increases. Finally, comparative study indicates that the proposed diode has a better performance compared to the silicon schottky diode, graphene nanoribbon homo-junction contact, and graphene-silicon schottky diode in terms of electrical parameters such as turn-on voltage and forward current.

scholarly journals A turn-on fluorogenic chemosensor for Fe3+ and a Schottky barrier diode with frequency-switching device applications

2018 ◽  
Vol 17 (4) ◽  
pp. 465-473 ◽  
Author(s):  
Habib Ali Molla ◽  
Rahul Bhowmick ◽  
Abu Saleh Musha Islam ◽  
Bibhutibhushan Show ◽  
Nillohit Mukherjee ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Fluorescent Chemosensor ◽  
Switching Device ◽  
Turn On ◽  
Highly Sensitive ◽  
Device Applications

A novel highly sensitive and selective fluorescent chemosensor L has been synthesized and characterized by various physicochemical techniques.

Investigation of Package Effects on the Edge Termination E-Field for HV WBG Power Semiconductors

2017 ◽  
Vol 2017 (1) ◽  
pp. 000224-000230
Author(s):  
Haotao Ke ◽  
Yifan Jiang ◽  
Adam J. Morgan ◽  
Douglas C. Hopkins
Keyword(s):  
Schottky Barrier ◽  
Field Distribution ◽  
Schottky Barrier Diode ◽  
Power Device ◽  
Guard Ring ◽  
Power Devices ◽  
Conducting Plane ◽  
Power Semiconductor ◽  
Edge Termination ◽  
Reverse Blocking

Abstract The edge termination of a power semiconductor is defined as the spatial junction terminations around the edges of the power devices. Guard rings are used to contour the internal depletion regions and E-fields as they terminate at the edge termination, i.e. the intersection of the depletion regions and the wafer saw line where the crystal damage is located. Since there is no specific package for WBG power devices, wire bonds are still widely used to interconnect to the topside metal pads of the power devices. From previous research it is shown that wire bonding will not affect the E-field around the guard rings on a WBG device. However, planar power package, such as double-sided and power flip-chip device packaging could be a problem where the close distance between the topside of the power device and conducting plane may negatively affect the E-field distribution of the guard rings, which in turn lowers the reverse blocking capability of the WBG power device and increases leakage current creating greater on-state power loss, or even early break down. Few works have shown the Electric field distribution in embedded power modules. Therefore, a more detailed investigation and possible solution is needed for the proliferation of double-sided power packages. To investigate this packaging problem simulations were performed in Sentaurus TCAD and COMSOL based on the device physics and package geometries. Guard ring structures in 1.2kV and 10kV SiC Schottky Barrier Diode (SBD) were built and simulated in various double-sided package geometries, together with the thermal and mechanical evaluation of the package, to observe the influence on the E-field distribution in and out the WBG device. Different double-sided package structures were evaluated and a guideline (spacing/pad size/etc.) summarized for double-sided design. Moreover, a new bevel edge termination method was evaluated for double-sided WBG power semiconductor devices. Experimental reverse blocking test results will be reported in various temperature (from 25°C to 175°C) to verify the function of the package. The tests are on 1200V/50A SiC SBD (Schottky Barrier Diode) from Global Power Technology, which has double-sided Ag on both sides.

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