Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)—Part II: Design Guidelines for Device, Array, and Architecture

Zizhen Jiang; Shengjun Qin; Haitong Li; Shosuke Fujii; Dongjin Lee; Simon Wong; H.-S. Philip Wong

doi:10.1109/ted.2019.2950595

Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)—Part II: Design Guidelines for Device, Array, and Architecture

IEEE Transactions on Electron Devices ◽

10.1109/ted.2019.2950595 ◽

2019 ◽

Vol 66 (12) ◽

pp. 5147-5154 ◽

Cited By ~ 6

Author(s):

Zizhen Jiang ◽

Shengjun Qin ◽

Haitong Li ◽

Shosuke Fujii ◽

Dongjin Lee ◽

...

Keyword(s):

Resistive Switching ◽

Design Guidelines ◽

Next Generation ◽

Resistive Switching Memory ◽

Ultrahigh Density ◽

Switching Memory

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Next-Generation Ultrahigh-Density 3-D Vertical Resistive Switching Memory (VRSM)—Part I: Accurate and Computationally Efficient Modeling

IEEE Transactions on Electron Devices ◽

10.1109/ted.2019.2950606 ◽

2019 ◽

Vol 66 (12) ◽

pp. 5139-5146 ◽

Cited By ~ 5

Author(s):

Shengjun Qin ◽

Zizhen Jiang ◽

Haitong Li ◽

Shosuke Fujii ◽

Dongjin Lee ◽

...

Keyword(s):

Resistive Switching ◽

Next Generation ◽

Computationally Efficient ◽

Resistive Switching Memory ◽

Ultrahigh Density ◽

Switching Memory ◽

Efficient Modeling

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Next-Generation Memory: Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109 (Adv. Electron. Mater. 7/2017)

Advanced Electronic Materials ◽

10.1002/aelm.201770028 ◽

2017 ◽

Vol 3 (7) ◽

Cited By ~ 1

Author(s):

Kyung Jean Yoon ◽

Gun Hwan Kim ◽

Sijung Yoo ◽

Woorham Bae ◽

Jung Ho Yoon ◽

...

Keyword(s):

Double Layer ◽

Resistive Switching ◽

Rectification Ratio ◽

Next Generation ◽

Resistive Switching Memory ◽

Crossbar Array ◽

Switching Memory

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Highly-Ordered 3D Vertical Resistive Switching Memory Arrays with Ultralow Power Consumption and Ultrahigh Density

ACS Applied Materials & Interfaces ◽

10.1021/acsami.6b05424 ◽

2016 ◽

Vol 8 (35) ◽

pp. 23348-23355 ◽

Cited By ~ 13

Author(s):

Ahmed Al-Haddad ◽

Chengliang Wang ◽

Haoyuan Qi ◽

Fabian Grote ◽

Liaoyong Wen ◽

...

Keyword(s):

Power Consumption ◽

Resistive Switching ◽

Resistive Switching Memory ◽

Ultralow Power ◽

Memory Arrays ◽

Ultrahigh Density ◽

Switching Memory

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A versatile multifaceted resistive switching memory activated by light and ion irradiation in poly (3-octylthiophene)-zinc oxide hybrids

Organic Electronics ◽

10.1016/j.orgel.2020.105932 ◽

2020 ◽

Vol 87 ◽

pp. 105932 ◽

Cited By ~ 1

Author(s):

Jitendra Singh ◽

R.G. Singh ◽

Subodh K. Gautam ◽

Himanshi Gupta ◽

Fouran Singh

Keyword(s):

Zinc Oxide ◽

Resistive Switching ◽

Ion Irradiation ◽

Resistive Switching Memory ◽

Switching Memory

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Resistive Switching Memory: Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire (Adv. Electron. Mater. 5/2021)

Advanced Electronic Materials ◽

10.1002/aelm.202170015 ◽

2021 ◽

Vol 7 (5) ◽

pp. 2170015

Author(s):

Yu‐Chuan Shih ◽

Ling Lee ◽

Kai‐De Liang ◽

Arumugam Manikandan ◽

Wen‐Wu Liu ◽

...

Keyword(s):

Resistive Switching ◽

Single Crystalline ◽

Resistive Switching Memory ◽

Switching Memory

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Polymer Nanocomposites for Resistive Switching Memory

Polymer Nanocomposite Materials ◽

10.1002/9783527826490.ch8 ◽

2021 ◽

pp. 211-246

Author(s):

Qazi Muhammad Saqib ◽

Muhammad Umair Khan ◽

Jinho Bae

Keyword(s):

Polymer Nanocomposites ◽

Resistive Switching ◽

Resistive Switching Memory ◽

Switching Memory

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Spray-Coated, Volatile and Nonvolatile, Two-Terminal, Resistive Switching Memory Devices Comprising Liquid-Exfoliated Black Phosphorus and Graphene Layers

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3029552 ◽

2020 ◽

Vol 67 (12) ◽

pp. 5484-5489

Author(s):

Yooyeon Jo ◽

Christos Dimitrakopoulos

Keyword(s):

Resistive Switching ◽

Black Phosphorus ◽

Memory Devices ◽

Graphene Layers ◽

Resistive Switching Memory ◽

Switching Memory

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Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs

IEEE Electron Device Letters ◽

10.1109/led.2013.2278098 ◽

2013 ◽

Vol 34 (10) ◽

pp. 1265-1267 ◽

Cited By ~ 14

Author(s):

Shih-Chieh Wu ◽

Hsien-Tsung Feng ◽

Ming-Jiue Yu ◽

I-Ting Wang ◽

Tuo-Hung Hou

Keyword(s):

Resistive Switching ◽

Resistive Switching Memory ◽

Switching Memory

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Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

IEEE Electron Device Letters ◽

10.1109/led.2010.2055828 ◽

2010 ◽

Vol 31 (9) ◽

pp. 1020-1022 ◽

Cited By ~ 18

Author(s):

C. H. Cheng ◽

Albert Chin ◽

F. S. Yeh

Keyword(s):

Resistive Switching ◽

Resistive Switching Memory ◽

Ultralow Power ◽

Switching Memory

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Abnormal Volatile Memory Characteristic in Normal Nonvolatile ZnSnO Resistive Switching Memory

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2831906 ◽

2018 ◽

Vol 65 (7) ◽

pp. 2812-2819 ◽

Cited By ~ 4

Author(s):

Chih-Chieh Hsu ◽

Yu-Ting Chen ◽

Po-Yang Chuang ◽

Yu-Sheng Lin

Keyword(s):

Resistive Switching ◽

Resistive Switching Memory ◽

Memory Characteristic ◽

Volatile Memory ◽

Switching Memory

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