scholarly journals Next-Generation Memory: Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109 (Adv. Electron. Mater. 7/2017)

2017 ◽  
Vol 3 (7) ◽  
Author(s):  
Kyung Jean Yoon ◽  
Gun Hwan Kim ◽  
Sijung Yoo ◽  
Woorham Bae ◽  
Jung Ho Yoon ◽  
...  
Keyword(s):  
Double Layer ◽  
Resistive Switching ◽  
Rectification Ratio ◽  
Next Generation ◽  
Resistive Switching Memory ◽  
Crossbar Array ◽  
Switching Memory

Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109

2017 ◽  
Vol 3 (7) ◽  
pp. 1700152 ◽  
Author(s):  
Kyung Jean Yoon ◽  
Gun Hwan Kim ◽  
Sijung Yoo ◽  
Woorham Bae ◽  
Jung Ho Yoon ◽  
...  
Keyword(s):  
Double Layer ◽  
Resistive Switching ◽  
Rectification Ratio ◽  
Resistive Switching Memory ◽  
Crossbar Array ◽  
Switching Memory

scholarly journals Fully Si compatible SiN resistive switching memory with large self-rectification ratio

AIP Advances ◽  
2016 ◽  
Vol 6 (1) ◽  
pp. 015021 ◽  
Author(s):  
Sungjun Kim ◽  
Seongjae Cho ◽  
Byung-Gook Park
Keyword(s):  
Resistive Switching ◽  
Rectification Ratio ◽  
Resistive Switching Memory ◽  
Switching Memory
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