Highly-Ordered 3D Vertical Resistive Switching Memory Arrays with Ultralow Power Consumption and Ultrahigh Density

2016 ◽  
Vol 8 (35) ◽  
pp. 23348-23355 ◽  
Author(s):  
Ahmed Al-Haddad ◽  
Chengliang Wang ◽  
Haoyuan Qi ◽  
Fabian Grote ◽  
Liaoyong Wen ◽  
...  
Keyword(s):  
Power Consumption ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Ultralow Power ◽  
Memory Arrays ◽  
Ultrahigh Density ◽  
Switching Memory

scholarly journals Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

2010 ◽  
Vol 31 (9) ◽  
pp. 1020-1022 ◽  
Author(s):  
C. H. Cheng ◽  
Albert Chin ◽  
F. S. Yeh
Keyword(s):  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Ultralow Power ◽  
Switching Memory

scholarly journals A new analytical electro-thermal model in 3D resistive switching memory arrays

2016 ◽  
Vol 46 (10) ◽  
pp. 107312
Author(s):  
ZhiWei ZONG ◽  
ZhuoYu JI ◽  
Ling LI ◽  
DeLong QIU ◽  
NianDuan LU ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Thermal Model ◽  
Resistive Switching Memory ◽  
Memory Arrays ◽  
Switching Memory

The effect of high resistivity AlOδ layer on low-power consumption of TaOx based resistive switching memory

Vacuum ◽  
2020 ◽  
Vol 174 ◽  
pp. 109186
Author(s):  
Jin Shi Zhao ◽  
Chen Wang ◽  
Yu Yan ◽  
Yu Ting Chen ◽  
Wen Tao Sun ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Resistive Switching ◽  
High Resistivity ◽  
Low Power Consumption ◽  
Resistive Switching Memory ◽  
Switching Memory

scholarly journals Reduced Operation Current of Oxygen-Doped ZrN Based Resistive Switching Memory Devices Fabricated by the Radio Frequency Sputtering Method

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 197 ◽  
Author(s):  
Jinsu Jung ◽  
Dongjoo Bae ◽  
Sungho Kim ◽  
Hee-Dong Kim
Keyword(s):  
Power Consumption ◽  
Resistive Switching ◽  
Bottom Electrode ◽  
Zirconium Nitride ◽  
Memory Cells ◽  
Resistive Switching Memory ◽  
Platinum Silicide ◽  
Radio Frequency Sputtering ◽  
Operating Current ◽  
Switching Memory

In this work, we report the feasibility of resistive switching (RS) properties of oxygen-doped zirconium nitride (O-doped ZrN) films with platinum (Pt) and platinum silicide (PtSi) bottom electrode (BE), produced by a sputtering method. Compared to O-doped ZrN using Pt BE, when Pt/p-Si was used as BE, the foaming voltage slightly increased, but the operation current was reduced by about two orders. In particular, the average reset current of the O-doped ZrN memory cells was reduced to 50 µA, which can delay deterioration of the element, and reduces power consumption. Therefore, the use of PtSi as the BE of the O-doped ZrN films is considered highly effective in improving reliability through reduction of operating current of the memory cells.

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