Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By ${\mathrm{Al}}_{x}{\mathrm{Ti}}_{1-x}$ O Based Gate Stack Engineering

2019 ◽  
Vol 66 (6) ◽  
pp. 2544-2550 ◽  
Author(s):  
Sayak Dutta Gupta ◽  
Ankit Soni ◽  
Vipin Joshi ◽  
Jeevesh Kumar ◽  
Rudrarup Sengupta ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Stack ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Mode Operation ◽  
Positive Threshold ◽  
Gan Hemts

Performance of ZnO TFTs with AlN as Insulator

2007 ◽  
Vol 1035 ◽  
Author(s):  
Maria Merlyne De Souza ◽  
Richard B Cross ◽  
Suhas Jejurikar ◽  
K P Adhi
Keyword(s):  
Surface Roughness ◽  
Threshold Voltage ◽  
Rf Sputtering ◽  
Interface States ◽  
Aluminium Nitride ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Positive Threshold ◽  
The Stability

AbstractThe performance of ZnO TFTs fabricated via RF sputtering, with Aluminium Nitride (AlN) as the underlying insulator are reported. The surface roughness of ZnO with AlN is lower than that with SiN by at least 5 times, and that with SiO2 by 30 times. The resulting mobility for the three insulators AlN, SiN, SiO2 using identical process is found to be 3, 0.2-0.7 and 0.1-0.25 cm2/Vs respectively. There does not appear to be any corresponding improvement in the stability of the AlN devices. The devices demonstrate significant positive threshold voltage shift with positive gate bias and negative threshold voltage shift with negative gate bias. The underlying cause is surmised to be ultra-fast interface states in combination with bulk traps in the ZnO.

Positive Threshold-Voltage Shift of Y2O3Gate Dielectric InAlN/GaN-on-Si (111) MOSHEMTs with Respect to HEMTs

2014 ◽  
Vol 3 (6) ◽  
pp. Q120-Q126 ◽  
Author(s):  
M. K. Bera ◽  
Y. Liu ◽  
L. M. Kyaw ◽  
Y. J. Ngoo ◽  
S. P. Singh ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Positive Threshold ◽  
Gan On Si

Over 1200 V Normally-OFF p-NiO gated AlGaN/GaN HEMTs on Si with a Small Threshold Voltage Shift

2021 ◽  
pp. 1-1
Author(s):  
Hui Guo ◽  
Hehe Gong ◽  
Pengfei Shao ◽  
Xinxin Yu ◽  
Jin Wang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Gan Hemts

scholarly journals A Very Robust AlGaN/GaN HEMT Technology to High Forward Gate Bias and Current

2012 ◽  
Vol 2012 ◽  
pp. 1-4 ◽  
Author(s):  
Bradley D. Christiansen ◽  
Eric R. Heller ◽  
Ronald A. Coutu ◽  
Ramakrishna Vetury ◽  
Jeffrey B. Shealy
Keyword(s):  
Breakdown Voltage ◽  
Threshold Voltage ◽  
Drain Current ◽  
Conventional Wisdom ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Bias Stress ◽  
Gan Hemt ◽  
Positive Threshold ◽  
Gan Hemts

Reports to date of GaN HEMTs subjected to forward gate bias stress include varied extents of degradation. We report an extremely robust GaN HEMT technology that survived—contrary to conventional wisdom—high forward gate bias (+6 V) and current (>1.8 A/mm) for >17.5 hours exhibiting only a slight change in gate diode characteristic, little decrease in maximum drain current, with only a 0.1 V positive threshold voltage shift, and, remarkably, a persisting breakdown voltage exceeding 200 V.

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

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