Electrode-Adaptive Thin-Film Integrated Logic Circuits

2019 ◽  
Vol 66 (2) ◽  
pp. 957-962 ◽  
Author(s):  
Byeong Hyeon Lee ◽  
Kyung-Sang Cho ◽  
Ahrum Sohn ◽  
Sungwoo Hwang ◽  
Sang Yeol Lee
Keyword(s):  
Thin Film ◽  
Logic Circuits ◽  
Integrated Logic

Fully Printed Stretchable Thin-Film Transistors and Integrated Logic Circuits

ACS Nano ◽  
2016 ◽  
Vol 10 (12) ◽  
pp. 11459-11468 ◽  
Author(s):  
Le Cai ◽  
Suoming Zhang ◽  
Jinshui Miao ◽  
Zhibin Yu ◽  
Chuan Wang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Logic Circuits ◽  
Integrated Logic

scholarly journals Discrimination of Skyrmion Chirality Via Spin-Orbit and -Transfer Torques for Logic Operation

2021 ◽  
Author(s):  
Yoshinobu Nakatani ◽  
Keisuke Yamada ◽  
Atsufumi Hirohata
Keyword(s):  
Thin Film ◽  
Building Block ◽  
Logic Circuits ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Spin Orbit ◽  
Electrical Detection ◽  
Magnetic Thin Film ◽  
Logic Operation ◽  
Fundamental Building Block

Abstract Recently many works on magnetic memories and logic circuits, which use a magnetic skyrmion have been reported. Previously we micromagnetically simulated a method to switch a chirality of a magnetic skyrmion formed in a magnetic thin film by introducing a pulsed heat spot. In this paper, we propose a method to discriminate the chirality of a skyrmion in a branched nanowire by using spin-orbit torque (SOT) and spin-transfer torque (STT), and confirm the validity of the method by using simulation. The simulated results show that the motion changes depending on the chirality when additional SOT is applied on a skyrmion moving in a branch by STT. This method can be used as a fundamental building block for electrical detection in memory and logic devices using the chirality of skyrmions as a data bit in addition to the presence (and polarity) of the skyrmions as conventionally used, which can be lead to multiple-valued operation.

Use of programmable integrated logic circuits in measurement engineering

1994 ◽  
Vol 37 (2) ◽  
pp. 136-138
Author(s):  
S. N. Shipulin ◽  
S. N. Shilyaev
Keyword(s):  
Logic Circuits ◽  
Measurement Engineering ◽  
Integrated Logic

Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H-21DNTT

2021 ◽  
Author(s):  
Anubha Bilgaiyan ◽  
Seung-Il Cho ◽  
Miho Abiko ◽  
Kaori Watanabe ◽  
Makoto Mizukami
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Channel Length ◽  
Logic Circuits ◽  
Organic Thin Film Transistors ◽  
Limiting Factors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Inverter Circuit

Abstract The low mobility and large contact resistance in organic thin-film transistors (OTFTs) are the two major limiting factors in the development of high-performance organic logic circuits. Here, solution-processed high-performance OTFTs and circuits are reported with a polymeric gate dielectric and 6,6 bis (trans-4-butylcyclohexyl)-dinaphtho[2,1-b:2,1-f ]thieno[3,2-b]thiophene (4H-21DNTT) for the organic semiconducting layer. By optimizing and controlling the fabrication conditions, a record high saturation mobility of 8.8 cm2V− 1s− 1 was demonstrated as well as large on/off ratios (> 106) for relatively short channel lengths of 15 µm and an average carrier mobility of 10.5 cm2V-1s-1 for long channel length OTFTs (> 50 µm). The pseudo-CMOS inverter circuit with a channel length of 15 µm exhibited sharp switching characteristics with a high signal gain of 31.5 at a supply voltage of 20 V. In addition to the inverter circuit, NAND logic circuits were further investigated, which also exhibited remarkable logic characteristics, with a high gain, an operating frequency of 5 kHz, and a short propagation delay of 22.1 µs. The uniform and reproducible performance of 4H-21DNTT OTFTs show potential for large-area, low-cost real-world applications on industry-compatible bottom-contact substrates.

scholarly journals Oxide Thin-Film Transistor-Based Vertically Stacked Complementary Inverter for Logic and Photo-Sensor Operations

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3815 ◽  
Author(s):  
Joo ◽  
Shin ◽  
Jung ◽  
Cha ◽  
Nam ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Logic Circuits ◽  
Low Noise ◽  
Visible Spectral Range ◽  
Oxide Thin Film ◽  
Voltage Gain ◽  
Noise Margin ◽  
Photo Sensor ◽  
Igzo Tft

Numerous studies have addressed the utilization of oxide thin-film transistor (TFT)-based complementary logic circuits that are based on two-dimensional (2D) planar structures. However, there are fundamental limits to the 2D planar structured complementary logic circuits, such as a large dimension and a large parasitic resistance. This work demonstrated a vertically stacked three-dimensional complementary inverter composed of a p-channel tin monoxide (SnO) TFT and an n-channel indium-gallium-zinc oxide (IGZO) TFT. A bottom-gate p-channel SnO TFT was formed on the top-gate n-channel IGZO TFT with a shared common gate electrode. The fabricated vertically stacked complementary inverter exhibited full swing characteristics with a voltage gain of ~33.6, a high noise margin of 3.13 V, and a low noise margin of 3.16 V at a supplied voltage of 10 V. The achieved voltage gain of the fabricated complementary inverter was higher than that of the vertically stacked complementary inverters composed of other oxide TFTs in previous works. In addition, we showed that the vertically stacked complementary inverter exhibited excellent visible-light photoresponse. This indicates that the oxide TFT-based vertically stacked complementary inverter can be used as a sensitive photo-sensor operating in the visible spectral range with the voltage read-out scheme.

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