Fully Printed Stretchable Thin-Film Transistors and Integrated Logic Circuits

ACS Nano ◽  
2016 ◽  
Vol 10 (12) ◽  
pp. 11459-11468 ◽  
Author(s):  
Le Cai ◽  
Suoming Zhang ◽  
Jinshui Miao ◽  
Zhibin Yu ◽  
Chuan Wang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Logic Circuits ◽  
Integrated Logic

Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H-21DNTT

2021 ◽  
Author(s):  
Anubha Bilgaiyan ◽  
Seung-Il Cho ◽  
Miho Abiko ◽  
Kaori Watanabe ◽  
Makoto Mizukami
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Channel Length ◽  
Logic Circuits ◽  
Organic Thin Film Transistors ◽  
Limiting Factors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Inverter Circuit

Abstract The low mobility and large contact resistance in organic thin-film transistors (OTFTs) are the two major limiting factors in the development of high-performance organic logic circuits. Here, solution-processed high-performance OTFTs and circuits are reported with a polymeric gate dielectric and 6,6 bis (trans-4-butylcyclohexyl)-dinaphtho[2,1-b:2,1-f ]thieno[3,2-b]thiophene (4H-21DNTT) for the organic semiconducting layer. By optimizing and controlling the fabrication conditions, a record high saturation mobility of 8.8 cm2V− 1s− 1 was demonstrated as well as large on/off ratios (> 106) for relatively short channel lengths of 15 µm and an average carrier mobility of 10.5 cm2V-1s-1 for long channel length OTFTs (> 50 µm). The pseudo-CMOS inverter circuit with a channel length of 15 µm exhibited sharp switching characteristics with a high signal gain of 31.5 at a supply voltage of 20 V. In addition to the inverter circuit, NAND logic circuits were further investigated, which also exhibited remarkable logic characteristics, with a high gain, an operating frequency of 5 kHz, and a short propagation delay of 22.1 µs. The uniform and reproducible performance of 4H-21DNTT OTFTs show potential for large-area, low-cost real-world applications on industry-compatible bottom-contact substrates.

Electrode-Adaptive Thin-Film Integrated Logic Circuits

2019 ◽  
Vol 66 (2) ◽  
pp. 957-962 ◽  
Author(s):  
Byeong Hyeon Lee ◽  
Kyung-Sang Cho ◽  
Ahrum Sohn ◽  
Sungwoo Hwang ◽  
Sang Yeol Lee
Keyword(s):  
Thin Film ◽  
Logic Circuits ◽  
Integrated Logic

Air-stable N-type printed carbon nanotube thin film transistors for CMOS logic circuits

Carbon ◽  
2020 ◽  
Vol 163 ◽  
pp. 145-153 ◽  
Author(s):  
Miaomiao Wei ◽  
Malo Robin ◽  
Luis Portilla ◽  
Yunfei Ren ◽  
Shuangshuang Shao ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Logic Circuits

Diffusion-activated high performance ZnSnO/Yb2O3 thin film transistors and application in low-voltage-operated logic circuits

2021 ◽  
Vol 70 ◽  
pp. 49-58
Author(s):  
Bing Yang ◽  
Gang He ◽  
Wenhao Wang ◽  
Yongchun Zhang ◽  
Chong Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Logic Circuits

scholarly journals Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H–21DNTT

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Anubha Bilgaiyan ◽  
Seung-Il Cho ◽  
Miho Abiko ◽  
Kaori Watanabe ◽  
Makoto Mizukami
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Channel Length ◽  
Logic Circuits ◽  
Organic Thin Film Transistors ◽  
Limiting Factors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Inverter Circuit

AbstractThe low mobility and large contact resistance in organic thin-film transistors (OTFTs) are the two major limiting factors in the development of high-performance organic logic circuits. Here, solution-processed high-performance OTFTs and circuits are reported with a polymeric gate dielectric and 6,6 bis (trans-4-butylcyclohexyl)-dinaphtho[2,1-b:2,1-f]thieno[3,2-b]thiophene (4H–21DNTT) for the organic semiconducting layer. By optimizing and controlling the fabrication conditions, a high saturation mobility of 8.8 cm2 V−1 s−1 was demonstrated as well as large on/off ratios (> 106) for relatively short channel lengths of 15 μm and an average carrier mobility of 10.5 cm2 V−1 s−1 for long channel length OTFTs (> 50 μm). The pseudo-CMOS inverter circuit with a channel length of 15 μm exhibited sharp switching characteristics with a high signal gain of 31.5 at a supply voltage of 20 V. In addition to the inverter circuit, NAND logic circuits were further investigated, which also exhibited remarkable logic characteristics, with a high gain, an operating frequency of 5 kHz, and a short propagation delay of 22.1 μs. The uniform and reproducible performance of 4H–21DNTT OTFTs show potential for large-area, low-cost real-world applications on industry-compatible bottom-contact substrates.

CMOS-Like Logic Circuits With Unipolar Thin-Film Transistors on Flexible Substrate

2020 ◽  
Vol 67 (2) ◽  
pp. 512-517
Author(s):  
Qing Li ◽  
Czang-Ho Lee ◽  
Mohsen Asad ◽  
William S. Wong ◽  
Manoj Sachdev
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Flexible Substrate ◽  
Logic Circuits

Electric characteristics of organic thin-film transistors and logic circuits with a ferroelectric gate insulator

2007 ◽  
Vol 515 (19) ◽  
pp. 7688-7691 ◽  
Author(s):  
Yong Suk Yang ◽  
Hye Yong Chu ◽  
Seong Hyun Kim ◽  
Sang Chul Lim ◽  
Jae Bon Koo ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Logic Circuits ◽  
Organic Thin Film Transistors ◽  
Gate Insulator ◽  
Organic Thin Film

Flexible logic circuits based on top-gate thin film transistors with printed semiconductor carbon nanotubes and top electrodes

Nanoscale ◽  
2014 ◽  
Vol 6 (24) ◽  
pp. 14891-14897 ◽  
Author(s):  
Weiwei Xu ◽  
Zhen Liu ◽  
Jianwen Zhao ◽  
Wenya Xu ◽  
Weibing Gu ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotubes ◽  
Thin Film Transistors ◽  
Logic Circuits ◽  
Semiconductor Carbon Nanotubes
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