Use of programmable integrated logic circuits in measurement engineering

1994 ◽  
Vol 37 (2) ◽  
pp. 136-138
Author(s):  
S. N. Shipulin ◽  
S. N. Shilyaev
Keyword(s):  
Logic Circuits ◽  
Measurement Engineering ◽  
Integrated Logic

Electrode-Adaptive Thin-Film Integrated Logic Circuits

2019 ◽  
Vol 66 (2) ◽  
pp. 957-962 ◽  
Author(s):  
Byeong Hyeon Lee ◽  
Kyung-Sang Cho ◽  
Ahrum Sohn ◽  
Sungwoo Hwang ◽  
Sang Yeol Lee
Keyword(s):  
Thin Film ◽  
Logic Circuits ◽  
Integrated Logic

scholarly journals Orthodox Theory Monte-Carlo Simulation of Single-Electron Logic Circuits

2019 ◽  
pp. 241-247
Keyword(s):  
Monte Carlo ◽  
Logic Circuits ◽  
Single Electron ◽  
Measurement Results ◽  
Single Electronics ◽  
Different Temperatures ◽  
Orthodox Theory ◽  
Single Electron Devices ◽  
Electron Devices ◽  
Integrated Logic

In the past decades MOS based digital integrated logic circuits have undergone a successful process of miniaturisation eventually leading to dimensions of a few nanometres. With the dimensions in the range of a few atomic radii the end of conventional MOS technology is approaching. Amongst the prospective candidates for sub 10nm logic are integrated logic circuits based on single-electron devices. In our contribution we present the use of MOSES (Monte-Carlo Single-Electronics Simulator) as a method for simulation of complementary single-electron logic circuits based on the orthodox theory. Simulations of single-electron devices including a single-electron box, a single-electron transistor and a complementary single-electron inverter were carried out. Their characteristics were evaluated at different temperatures and compared to measurement results obtained at other institutions. The potential for room-temperature operation was also assessed.

scholarly journals Solution-processable integrated CMOS circuits based on colloidal CuInSe2 quantum dots

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Hyeong Jin Yun ◽  
Jaehoon Lim ◽  
Jeongkyun Roh ◽  
Darren Chi Jin Neo ◽  
Matt Law ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Electronic Devices ◽  
Logic Circuits ◽  
Cmos Circuits ◽  
Molecular Systems ◽  
Inorganic Semiconductors ◽  
Colloidal Quantum Dot ◽  
Integrated Logic ◽  
Cd Chalcogenides

Abstract The emerging technology of colloidal quantum dot electronics provides an opportunity for combining the advantages of well-understood inorganic semiconductors with the chemical processability of molecular systems. So far, most research on quantum dot electronic devices has focused on materials based on Pb- and Cd chalcogenides. In addition to environmental concerns associated with the presence of toxic metals, these quantum dots are not well suited for applications in CMOS circuits due to difficulties in integrating complementary n- and p-channel transistors in a common quantum dot active layer. Here, we demonstrate that by using heavy-metal-free CuInSe2 quantum dots, we can address the problem of toxicity and simultaneously achieve straightforward integration of complimentary devices to prepare functional CMOS circuits. Specifically, utilizing the same spin-coated layer of CuInSe2 quantum dots, we realize both p- and n-channel transistors and demonstrate well-behaved integrated logic circuits with low switching voltages compatible with standard CMOS electronics.

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