Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs

2019 ◽  
Vol 66 (1) ◽  
pp. 357-363 ◽  
Author(s):  
Yonghao Jia ◽  
Yuehang Xu ◽  
Zhang Wen ◽  
Yunqiu Wu ◽  
Yongxin Guo
Keyword(s):  
Compact Model ◽  
Large Signal ◽  
Gate Capacitance ◽  
Gan Hemts

On the large-signal modeling of AlGaN/GaN HEMTs for RF switching-mode power amplifiers design

2009 ◽  
Author(s):  
Anwar Jarndal ◽  
Pouya Aflaki ◽  
Louay Degachi ◽  
Ahmed Birafane ◽  
Ammar Kouki ◽  
...  
Keyword(s):  
Power Amplifiers ◽  
Signal Modeling ◽  
Large Signal ◽  
Gan Hemts ◽  
Switching Mode

A Large-Signal Monolayer Graphene Field-Effect Transistor Compact Model for RF-Circuit Applications

2017 ◽  
Vol 64 (10) ◽  
pp. 4302-4309 ◽  
Author(s):  
Jorge-Daniel Aguirre-Morales ◽  
Sebastien Fregonese ◽  
Chhandak Mukherjee ◽  
Wei Wei ◽  
Henri Happy ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Compact Model ◽  
Monolayer Graphene ◽  
Large Signal ◽  
Graphene Field Effect Transistor ◽  
Effect Transistor ◽  
Rf Circuit

Characterization and modeling of large signal dynamics of GaN HEMTs

2015 ◽  
Author(s):  
R. Quere ◽  
J. C Nallatamby ◽  
S. Laurent ◽  
A. Benvegnu ◽  
D. Barataud
Keyword(s):  
Large Signal ◽  
Gan Hemts
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