A physics based compact model of gate capacitance in AlGaN/GaN HEMT devices

2012 ◽  
Author(s):  
Sourabh Khandelwal ◽  
Tor A. Fjeldly
Keyword(s):  
Compact Model ◽  
Gate Capacitance ◽  
Gan Hemt

scholarly journals A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters

Energies ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 2092
Author(s):  
Ke Li ◽  
Paul Leonard Evans ◽  
Christopher Mark Johnson ◽  
Arnaud Videt ◽  
Nadir Idir
Keyword(s):  
Power Electronics ◽  
Physical Model ◽  
Order Reduction ◽  
Power Converter ◽  
Compact Model ◽  
Voltage Source ◽  
Power Losses ◽  
Gan Hemt ◽  
Operation Conditions ◽  
Power Electronics Converters

In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristics, and a behavioural voltage source, which includes multiple RC units to represent different time constants for trapping and detrapping effect from 100 ns to 100 s range. All the required parameters in the model can be obtained by fitting method using a datasheet or experimental characterisation results. The model is then implemented into our developed virtual prototyping software, where the device compact model is co-simulated with a parasitic inductance physical model to obtain the switching waveform. As model order reduction is applied in our software to resolve physical model, the device switching current and voltage waveform can be obtained in the range of minutes. By comparison with experimental measurements, the model is validated to accurately represent device switching transients as well as their spectrum in frequency domain until 100 MHz. In terms of dynamic RDSon value, the mismatch between the model and experimental results is within 10% under different power converter operation conditions in terms of switching frequencies and duty cycles, so designers can use this model to accurately obtain GaN-HEMT power losses due to trapping and detrapping effects for power electronics converters.

Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

2013 ◽  
Vol 60 (10) ◽  
pp. 3216-3222 ◽  
Author(s):  
Sourabh Khandelwal ◽  
Chandan Yadav ◽  
Shantanu Agnihotri ◽  
Yogesh Singh Chauhan ◽  
Arnaud Curutchet ◽  
...  
Keyword(s):  
Surface Potential ◽  
Compact Model ◽  
Ic Design ◽  
Gan Hemt

scholarly journals Facilitation of GaN-Based RF- and HV-Circuit Designs Using MVS-GaN HEMT Compact Model

2019 ◽  
Vol 66 (1) ◽  
pp. 95-105 ◽  
Author(s):  
Ujwal Radhakrishna ◽  
Pilsoon Choi ◽  
Dimitri A. Antoniadis
Keyword(s):  
Compact Model ◽  
Gan Hemt

Analytical Gate Capacitance Models for Large-Signal Compact Model of AlGaN/GaN HEMTs

2019 ◽  
Vol 66 (1) ◽  
pp. 357-363 ◽  
Author(s):  
Yonghao Jia ◽  
Yuehang Xu ◽  
Zhang Wen ◽  
Yunqiu Wu ◽  
Yongxin Guo
Keyword(s):  
Compact Model ◽  
Large Signal ◽  
Gate Capacitance ◽  
Gan Hemts
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