High Mobility Flexible Ferroelectric Organic Transistor Nonvolatile Memory With an Ultrathin ${\text {AlO}}_{{X}}$ Interfacial Layer

2018 ◽  
Vol 65 (3) ◽  
pp. 1113-1118 ◽  
Author(s):  
Meili Xu ◽  
Shuxu Guo ◽  
Lanyi Xiang ◽  
Ting Xu ◽  
Wenfa Xie ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Nonvolatile Memory ◽  
High Mobility ◽  
Organic Transistor

Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO2 Gate Dielectric

2018 ◽  
Vol 924 ◽  
pp. 482-485
Author(s):  
Min Seok Kang ◽  
Kevin Lawless ◽  
Bong Mook Lee ◽  
Veena Misra
Keyword(s):  
Threshold Voltage ◽  
Interfacial Layer ◽  
Field Effect ◽  
Lanthanum Oxide ◽  
Gate Dielectric ◽  
High Mobility ◽  
High Threshold ◽  
Field Effect Mobility ◽  
The Impact ◽  
Lanthanum Silicate

We investigated the impact of an initial lanthanum oxide (La2O3) thickness and forming gas annealing (FGA) conditions on the MOSFET performance. The FGA has been shown to dramatically improve the threshold voltage (VT) stability of 4H-SiC MOSFETs. The FGA process leads to low VTshift and high field effect mobility due to reduction of the interface states density as well as traps by passivating the dangling bonds and active traps in the Lanthanum Silicate dielectrics. By optimizing the La2O3interfacial layer thickness and FGA condition, SiC MOSFETs with high threshold voltage and high mobility while maintaining minimal VTshift are realized.

scholarly journals Effect of organic cathode interfacial layers on efficiency and stability improvement of polymer solar cells

RSC Advances ◽  
2017 ◽  
Vol 7 (50) ◽  
pp. 31158-31163 ◽  
Author(s):  
Mingguang Li ◽  
Wen Zhang ◽  
Honglei Wang ◽  
Lingfeng Chen ◽  
Chao Zheng ◽  
...  
Keyword(s):  
Solar Cells ◽  
Interfacial Layer ◽  
Polymer Solar Cells ◽  
High Mobility ◽  
Interfacial Layers

Simultaneously enhanced efficiency and stability can be achieved by using an organic cathode interfacial layer with high mobility and coarse morphology.

scholarly journals Stacking-engineered ferroelectricity in bilayer boron nitride

Science ◽  
2021 ◽  
pp. eabd3230
Author(s):  
Kenji Yasuda ◽  
Xirui Wang ◽  
Kenji Watanabe ◽  
Takashi Taniguchi ◽  
Pablo Jarillo-Herrero
Keyword(s):  
Boron Nitride ◽  
Nonvolatile Memory ◽  
Rational Design ◽  
Parent Compound ◽  
High Mobility ◽  
Building Blocks ◽  
Electric Polarization ◽  
Experimental Realization ◽  
Polar Crystal ◽  
Memory Applications

2D ferroelectrics with robust polarization down to atomic thicknesses provide building blocks for functional heterostructures. Experimental realization remains challenging because of the requirement of a layered polar crystal. Here, we demonstrate a rational design approach to engineering 2D ferroelectrics from a non-ferroelectric parent compound via employing van der Waals assembly. Parallel-stacked bilayer boron nitride exhibits out-of-plane electric polarization that reverses depending on the stacking order. The polarization switching is probed via the resistance of an adjacently stacked graphene sheet. Twisting the boron nitride sheets by a small angle changes the dynamics of switching thanks to the formation of moiré ferroelectricity with staggered polarization. The ferroelectricity persists to room temperature while keeping the high mobility of graphene, paving the way for potential ultrathin nonvolatile memory applications.

A thickness modulation effect of HfO2 interfacial layer between double-stacked Ag nanocrystals for nonvolatile memory device applications

2007 ◽  
Vol 101 (2) ◽  
pp. 026109 ◽  
Author(s):  
Seong-Wan Ryu ◽  
Yang-Kyu Choi ◽  
Chan Bin Mo ◽  
Soon Hyung Hong ◽  
Pan Kwi Park ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Nonvolatile Memory ◽  
Memory Device ◽  
Modulation Effect ◽  
Nonvolatile Memory Device ◽  
Device Applications

High mobility organic transistor patterned by the shadow-mask with all structure on a plastic substrate

2007 ◽  
Vol 42 (3) ◽  
pp. 1026-1030 ◽  
Author(s):  
Joo-Won Lee ◽  
Byeong-Kwon Ju ◽  
Jin Jang ◽  
Young-Soo Yoon ◽  
Jai-Kyeong Kim
Keyword(s):  
High Mobility ◽  
Plastic Substrate ◽  
Shadow Mask ◽  
Organic Transistor
Sign in / Sign up

Export Citation Format

Share Document