Selective GeOx-scavenging from interfacial layer on Si1−xGex channel for high mobility Si/Si1−xGex CMOS application

2016 ◽  
Author(s):  
C. H. Lee ◽  
H. Kim ◽  
P. Jamison ◽  
R. G. Southwick ◽  
S. Mochizuki ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
High Mobility

Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO2 Gate Dielectric

2018 ◽  
Vol 924 ◽  
pp. 482-485
Author(s):  
Min Seok Kang ◽  
Kevin Lawless ◽  
Bong Mook Lee ◽  
Veena Misra
Keyword(s):  
Threshold Voltage ◽  
Interfacial Layer ◽  
Field Effect ◽  
Lanthanum Oxide ◽  
Gate Dielectric ◽  
High Mobility ◽  
High Threshold ◽  
Field Effect Mobility ◽  
The Impact ◽  
Lanthanum Silicate

We investigated the impact of an initial lanthanum oxide (La2O3) thickness and forming gas annealing (FGA) conditions on the MOSFET performance. The FGA has been shown to dramatically improve the threshold voltage (VT) stability of 4H-SiC MOSFETs. The FGA process leads to low VTshift and high field effect mobility due to reduction of the interface states density as well as traps by passivating the dangling bonds and active traps in the Lanthanum Silicate dielectrics. By optimizing the La2O3interfacial layer thickness and FGA condition, SiC MOSFETs with high threshold voltage and high mobility while maintaining minimal VTshift are realized.

scholarly journals Effect of organic cathode interfacial layers on efficiency and stability improvement of polymer solar cells

RSC Advances ◽  
2017 ◽  
Vol 7 (50) ◽  
pp. 31158-31163 ◽  
Author(s):  
Mingguang Li ◽  
Wen Zhang ◽  
Honglei Wang ◽  
Lingfeng Chen ◽  
Chao Zheng ◽  
...  
Keyword(s):  
Solar Cells ◽  
Interfacial Layer ◽  
Polymer Solar Cells ◽  
High Mobility ◽  
Interfacial Layers

Simultaneously enhanced efficiency and stability can be achieved by using an organic cathode interfacial layer with high mobility and coarse morphology.

scholarly journals Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving the Improved Mobility

2021 ◽  
Author(s):  
Lulu Chou ◽  
Yan Liu ◽  
Yang Xu ◽  
Yue Peng ◽  
Huan Liu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Interfacial Layer ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
High Mobility ◽  
Gate Insulator ◽  
Equivalent Thickness ◽  
Effective Electron ◽  
Drive Current ◽  
Inversion Charge

Abstract High mobility Ge nMOSFETs with ZrO2 gate dielectric are demonstrated and compared against transistors with Al2O3/ZrO2 , ZrO2, and O3 /ZrO 2 gate dielectrics. The Al2O3/ZrO2 provides for dramatically enhanced-effective electron mobility ( μeff ), boosting transistor drive current. Ge nMOSFETs with the Al2O3 /ZrO2 gate insulator achieve a 50% μeff improvement as compared to the Si universal mobility at an inversion charge density ( Qinv ) of 5 × 10 12 cm -2 . An Al2O3 interfacial layer leads to a boost in μeff but increases capacitance equivalent thickness (CET). Utilizing O3 oxidation of Ge surface, Al2O3 -free Ge nMOSFETs having a CET of 1.1 nm obtains a peak μ eff of 682 cm2 /Vs, which is higher than that of the Si universal mobility at the similar Qinv .

scholarly journals Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Lulu Chou ◽  
Yan Liu ◽  
Yang Xu ◽  
Yue Peng ◽  
Huan Liu ◽  
...  
Keyword(s):  
Charge Density ◽  
Electron Mobility ◽  
Interfacial Layer ◽  
High Performance ◽  
Gate Dielectric ◽  
High Mobility ◽  
Post Treatment ◽  
The Other ◽  
Effective Electron ◽  
Inversion Charge

AbstractHigh-mobility Ge nMOSFETs with ZrO2 gate dielectric are demonstrated and compared against transistors with different interfacial properties of ozone (O3) treatment, O3 post-treatment and without O3 treatment. It is found that with O3 treatment, the Ge nMOSFETs with ZrO2 dielectric having a EOT of 0.83 nm obtain a peak effective electron mobility (μeff) of 682 cm2/Vs, which is higher than that of the Si universal mobility at the medium inversion charge density (Qinv). On the other hand, the O3 post-treatment with Al2O3 interfacial layer can provide dramatically enhanced-μeff, achieving about 50% μeff improvement as compared to the Si universal mobility at medium Qinv of 5 × 1012 cm−2. These results indicate the potential utilization of ZrO2 dielectric in high-performance Ge nMOSFETs.

High Mobility Flexible Ferroelectric Organic Transistor Nonvolatile Memory With an Ultrathin ${\text {AlO}}_{{X}}$ Interfacial Layer

2018 ◽  
Vol 65 (3) ◽  
pp. 1113-1118 ◽  
Author(s):  
Meili Xu ◽  
Shuxu Guo ◽  
Lanyi Xiang ◽  
Ting Xu ◽  
Wenfa Xie ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Nonvolatile Memory ◽  
High Mobility ◽  
Organic Transistor

High Mobility 4H-SiC MOSFETs Using Lanthanum Silicate Interface Engineering and ALD Deposited SiO2

2014 ◽  
Vol 778-780 ◽  
pp. 557-561 ◽  
Author(s):  
Xiang Yu Yang ◽  
Bong Mook Lee ◽  
Veena Misra
Keyword(s):  
Threshold Voltage ◽  
Interfacial Layer ◽  
High Mobility ◽  
Atomic Layer ◽  
State Density ◽  
Silicate Layer ◽  
High Threshold ◽  
Interface Engineering ◽  
Dielectric Interface ◽  
Lanthanum Silicate

In this work, we have developed a novel gate stack to enhance the mobility of Si face (0001) 4H-SiC lateral MOSFETs while maintaining a high threshold voltage. The gate dielectric consists a thin lanthanum silicate layer at SiC/dielectric interface and SiO2deposited by atomic layer deposition. MOSFETs using this interface engineering technique show a peak field effect mobility of 133.5 cm2/Vs while maintaining a positive threshold voltage of above 3V. The interface state density measured on MOS capacitor with lanthanum silicate interfacial layers is reduced compared to the capacitors without the silicate. It is shown that the presence of the lanthanum at the interface reduces the formation of a lower quality SiOxinterfacial layer typically formed at the SiC surface during typical high temperature anneals. This better quality interfacial layer produces a sharp SiC/dielectric interface, which is confirmed by cross section Z-contrast STEM images.

A TEM study of the effect of oxygen on nanocavity formation and precipitation in rapid - solidified Fe-16Ni-9Cr stainless steels

1994 ◽  
Vol 52 ◽  
pp. 700-701
Author(s):  
S. Wisutmethangoon ◽  
T. F. Kelly ◽  
J.E. Flinn
Keyword(s):  
Stainless Steels ◽  
High Mobility ◽  
Hot Extrusion ◽  
Extrusion Ratio ◽  
Gas Atomization ◽  
Cavity Formation ◽  
Nucleation Sites ◽  
Heat Treated ◽  
Different Types ◽  
Effect Of Oxygen

Vacancies are introduced into the crystal phase during quenching of rapid solidified materials. Cavity formation occurs because of the coalescence of the vacancies into a cluster. However, because of the high mobility of vacancies at high temperature, most of them will diffuse back into the liquid phase, and some will be lost to defects such as dislocations. Oxygen is known to stabilize cavities by decreasing the surface energy through a chemisorption process. These stabilized cavities, furthermore, act as effective nucleation sites for precipitates to form during aging. Four different types of powders with different oxygen contents were prepared by gas atomization processing. The atomized powders were then consolidated by hot extrusion at 900 °C with an extrusion ratio 10,5:1. After consolidation, specimens were heat treated at 1000 °C for 1 hr followed by water quenching. Finally, the specimens were aged at 600 °C for about 800 hrs. TEM samples were prepared from the gripends of tensile specimens of both unaged and aged alloys.

The need of electron microscopy in the study of domains and domain walls in ferroelectrics

1994 ◽  
Vol 52 ◽  
pp. 550-551
Author(s):  
Wenwu Cao
Keyword(s):  
Domain Wall ◽  
Domain Walls ◽  
High Mobility ◽  
Continuum Theory ◽  
Polarization Vector ◽  
Ferroelectric Materials ◽  
Dielectric Constants ◽  
Nonlocal Coupling ◽  
Cubic Symmetry ◽  
Gradient Energy

Domain structures play a key role in determining the physical properties of ferroelectric materials. The formation of these ferroelectric domains and domain walls are determined by the intrinsic nonlinearity and the nonlocal coupling of the polarization. Analogous to soliton excitations, domain walls can have high mobility when the domain wall energy is high. The domain wall can be describes by a continuum theory owning to the long range nature of the dipole-dipole interactions in ferroelectrics. The simplest form for the Landau energy is the so called ϕ model which can be used to describe a second order phase transition from a cubic prototype,where Pi (i =1, 2, 3) are the components of polarization vector, α's are the linear and nonlinear dielectric constants. In order to take into account the nonlocal coupling, a gradient energy should be included, for cubic symmetry the gradient energy is given by,

Sign in / Sign up

Export Citation Format

Share Document