scholarly journals A 0.5erms−Temporal Noise CMOS Image Sensor With Gm-Cell-Based Pixel and Period-Controlled Variable Conversion Gain

2017 ◽  
Vol 64 (12) ◽  
pp. 5019-5026 ◽  
Author(s):  
Xiaoliang Ge ◽  
Albert J. P. Theuwissen
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Conversion Gain ◽  
Temporal Noise

scholarly journals An Optical Filter-Less CMOS Image Sensor with Differential Spectral Response Pixels for Simultaneous UV-Selective and Visible Imaging

Sensors ◽  
2019 ◽  
Vol 20 (1) ◽  
pp. 13
Author(s):  
Yhang Ricardo Sipauba Carvalho da Silva ◽  
Rihito Kuroda ◽  
Shigetoshi Sugawa
Keyword(s):  
Visible Light ◽  
Spectral Sensitivity ◽  
Dynamic Range ◽  
Uv Light ◽  
Spectral Response ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Oxide Semiconductor ◽  
Conversion Gain ◽  
Uv Sensitivity

This paper presents a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) capable of capturing UV-selective and visible light images simultaneously by a single exposure and without employing optical filters, suitable for applications that require simultaneous UV and visible light imaging, or UV imaging in variable light environment. The developed CIS is composed by high and low UV sensitivity pixel types, arranged alternately in a checker pattern. Both pixel types were designed to have matching sensitivities for non-UV light. The UV-selective image is captured by extracting the differential spectral response between adjacent pixels, while the visible light image is captured simultaneously by the low UV sensitivity pixels. Also, to achieve high conversion gain and wide dynamic range simultaneously, the lateral overflow integration capacitor (LOFIC) technology was introduced in both pixel types. The developed CIS has a pixel pitch of 5.6 µm and exhibits 172 µV/e− conversion gain, 131 ke− full well capacity (FWC), and 92.3 dB dynamic range. The spectral sensitivity ranges of the high and low UV sensitivity pixels are of 200–750 nm and 390–750 nm, respectively. The resulting sensitivity range after the differential spectral response extraction is of 200–480 nm. This paper presents details regarding the CIS pixels structures, doping profiles, device simulations, and the measurement results for photoelectric response and spectral sensitivity for both pixel types. Also, sample images of UV-selective and visible spectral imaging using the developed CIS are presented.

Optimum Design of Conversion Gain and Full Well Capacity in CMOS Image Sensor With Lateral Overflow Integration Capacitor

2009 ◽  
Vol 56 (11) ◽  
pp. 2429-2435 ◽  
Author(s):  
Nana Akahane ◽  
Satoru Adachi ◽  
Koichi Mizobuchi ◽  
Shigetoshi Sugawa
Keyword(s):  
Optimum Design ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Conversion Gain
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