A Simple Model of Negative Capacitance FET With Electrostatic Short Channel Effects

Zhipeng Dong; Jing Guo

doi:10.1109/ted.2017.2706182

A Simple Model of Negative Capacitance FET With Electrostatic Short Channel Effects

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2706182 ◽

2017 ◽

Vol 64 (7) ◽

pp. 2927-2934 ◽

Cited By ~ 27

Author(s):

Zhipeng Dong ◽

Jing Guo

Keyword(s):

Simple Model ◽

Negative Capacitance ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Numerical Investigation of Short-Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Above-Threshold Behavior

IEEE Transactions on Electron Devices ◽

10.1109/ted.2019.2892186 ◽

2019 ◽

Vol 66 (3) ◽

pp. 1591-1598 ◽

Cited By ~ 9

Author(s):

Girish Pahwa ◽

Amit Agarwal ◽

Yogesh Singh Chauhan

Keyword(s):

Numerical Investigation ◽

Negative Capacitance ◽

Short Channel Effects ◽

Threshold Behavior ◽

Short Channel ◽

Channel Effects

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Analytical Modeling of Short-Channel Effects in MFIS Negative-Capacitance FET Including Quantum Confinement Effects

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3022002 ◽

2020 ◽

Vol 67 (11) ◽

pp. 4757-4764

Author(s):

Nilesh Pandey ◽

Yogesh Singh Chauhan

Keyword(s):

Quantum Confinement ◽

Analytical Modeling ◽

Negative Capacitance ◽

Short Channel Effects ◽

Confinement Effects ◽

Short Channel ◽

Quantum Confinement Effects ◽

Channel Effects

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Mitigating DIBL and Short-Channel Effects for III-V FinFETs with Negative-Capacitance Effects

IEEE Journal of the Electron Devices Society ◽

10.1109/jeds.2021.3133453 ◽

2021 ◽

pp. 1-1

Author(s):

Shih-En Huang ◽

Wei-Xiang You ◽

Pin Su

Keyword(s):

Negative Capacitance ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects ◽

Capacitance Effects

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Design of steep-slope negative-capacitance FinFETs for dense integration: Importance of appropriate ferroelectric capacitance and short-channel effects

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.04fd03 ◽

2018 ◽

Vol 57 (4S) ◽

pp. 04FD03 ◽

Cited By ~ 1

Author(s):

Hiroyuki Ota ◽

Junichi Hattori ◽

Hidehiro Asai ◽

Tsutomu Ikegami ◽

Koichi Fukuda ◽

...

Keyword(s):

Steep Slope ◽

Negative Capacitance ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Numerical Investigation of Short-Channel Effects in Negative Capacitance MFIS and MFMIS Transistors: Subthreshold Behavior

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2870519 ◽

2018 ◽

Vol 65 (11) ◽

pp. 5130-5136 ◽

Cited By ~ 29

Author(s):

Girish Pahwa ◽

Amit Agarwal ◽

Yogesh Singh Chauhan

Keyword(s):

Numerical Investigation ◽

Negative Capacitance ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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A simple model for short-channel effects of a buried-channel MOSFET on the buried insulator

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1982.21021 ◽

1982 ◽

Vol 29 (11) ◽

pp. 1749-1755 ◽

Cited By ~ 7

Author(s):

Y. Omura

Keyword(s):

Simple Model ◽

Short Channel Effects ◽

Short Channel ◽

Buried Channel ◽

Channel Effects

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Modeling of Inner Fringing Charges and Short Channel Effects in Negative Capacitance MFIS Transistor

2019 Electron Devices Technology and Manufacturing Conference (EDTM) ◽

10.1109/edtm.2019.8731214 ◽

2019 ◽

Cited By ~ 2

Author(s):

Amol D. Gaidhane ◽

Girish Pahwa ◽

Amit Verma ◽

Yogesh Singh Chauhan

Keyword(s):

Negative Capacitance ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Short-Channel Effects in 2D Negative-Capacitance Field-Effect Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2805716 ◽

2018 ◽

Vol 65 (4) ◽

pp. 1604-1610 ◽

Cited By ~ 14

Author(s):

Wei-Xiang You ◽

Chih-Peng Tsai ◽

Pin Su

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Negative Capacitance ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Investigation of short-channel effects in 2D negative-capacitance field-effect transistors

2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s.2017.8308758 ◽

2017 ◽

Author(s):

Wei-Xiang You ◽

Chih-Peng Tsai ◽

Pin Su

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Negative Capacitance ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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Suppressed Source-to-Drain Tunneling and Short-Channel Effects for MFIS-type InGaAs and Si Negative-Capacitance FinFETs

2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ◽

10.1109/vlsi-tsa51926.2021.9440110 ◽

2021 ◽

Author(s):

Shih-En Huang ◽

Pin Su

Keyword(s):

Negative Capacitance ◽

Short Channel Effects ◽

Short Channel ◽

Channel Effects

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