Physically Based Evaluation of Effect of Buried Oxide on Surface Roughness Scattering Limited Hole Mobility in Ultrathin GeOI MOSFETs

2017 ◽  
Vol 64 (6) ◽  
pp. 2611-2616 ◽  
Author(s):  
Xiaolei Wang ◽  
Jinjuan Xiang ◽  
Kai Han ◽  
Shengkai Wang ◽  
Jun Luo ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Hole Mobility ◽  
Buried Oxide ◽  
Surface Roughness Scattering ◽  
Physically Based

The effect of surface roughness scattering on hole mobility in double gate silicon-on-insulator devices

2009 ◽  
Vol 106 (2) ◽  
pp. 023705 ◽  
Author(s):  
Luca Donetti ◽  
Francisco Gámiz ◽  
Noel Rodriguez ◽  
Andres Godoy ◽  
Carlos Sampedro
Keyword(s):  
Surface Roughness ◽  
Hole Mobility ◽  
Silicon On Insulator ◽  
Double Gate ◽  
Surface Roughness Scattering ◽  
Effect Of Surface

Calibration of Mobility and Interface Trap Parameters for High Temperature TCAD Simulation of 4H-SiC VDMOSFETs

2012 ◽  
Vol 717-720 ◽  
pp. 1101-1104 ◽  
Author(s):  
M.G. Jaikumar ◽  
Shreepad Karmalkar
Keyword(s):  
Surface Roughness ◽  
Measured Data ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Material Parameters ◽  
Velocity Saturation ◽  
Physical Mechanisms ◽  
Surface Roughness Scattering ◽  
Wide Range ◽  
Tcad Simulation

4H-Silicon Carbide VDMOSFET is simulated using the Sentaurus TCAD package of Synopsys. The simulator is calibrated against measured data for a wide range of bias conditions and temperature. Material parameters of 4H-SiC are taken from literature and used in the available silicon models of the simulator. The empirical parameters are adjusted to get a good fit between the simulated curves and measured data. The simulation incorporates the bias and temperature dependence of important physical mechanisms like interface trap density, coulombic interface trap scattering, surface roughness scattering and velocity saturation.

Electron Mobility due to Surface Roughness Scattering in Depleted GaAs Free-Standing Thin Ribbon

2019 ◽  
Vol 954 ◽  
pp. 51-59
Author(s):  
Xi Duo Hu ◽  
Cheng Ming Li ◽  
Shao Yan Yang
Keyword(s):  
Surface Roughness ◽  
Quantum Well ◽  
Electron Mobility ◽  
Atomic Scale ◽  
Free Standing ◽  
Poisson Equations ◽  
Surface Roughness Scattering ◽  
Calculation Results ◽  
Roughness Amplitude ◽  
Dimensional Electron Gas

Abstract:Electron mobility limited by surface roughness scattering in free-standing GaAs thin ribbon with an internal parabolic quantum well caused by surface state is investigated in detail. Based on analyzing the parabolic quantum well including the energy subband level, wave function and the confined potential profile in the thin ribbon by solving Schrödinger and Poisson equations self-consistently, the electron mobility could be investigated. Conclusion indicates that remote surface roughness (RSR) of the thin ribbon will change the two dimensional electron gas (2DEG) mobility through the medium of barrier height fluctuation of the parabolic well in atomic scale. Calculation results reveal that the 2DEG mobility decreases with increasing roughness amplitude, which is characterized in terms of the surface roughness height and the roughness lateral size.

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