Analytical Model of pH sensing Characteristics of Junctionless Silicon on Insulator ISFET

2017 ◽  
Vol 64 (4) ◽  
pp. 1742-1750 ◽  
Author(s):  
Rakhi Narang ◽  
Manoj Saxena ◽  
Mridula Gupta
Keyword(s):  
Analytical Model ◽  
Silicon On Insulator ◽  
Ph Sensing ◽  
Sensing Characteristics

An Analytical Modeling and Performance Analysis of Graded Work Function Gate Recessed Channel SOI-MOSFET

2019 ◽  
Vol 9 (4) ◽  
pp. 504-511
Author(s):  
Sikha Mishra ◽  
Urmila Bhanja ◽  
Guru Prasad Mishra
Keyword(s):  
Analytical Model ◽  
Surface Potential ◽  
Threshold Voltage ◽  
Silicon On Insulator ◽  
Junction Depth ◽  
Short Channel ◽  
Soi Mosfet ◽  
Minimum Surface ◽  
Recessed Channel ◽  
The Impact

Introduction: A new analytical model is designed for Workfunction Modulated Rectangular Recessed Channel-Silicon On Insulator (WMRRC-SOI) MOSFET that considers the concept of groove gate and implements an idea of workfunction engineering. Methods: The impact of Negative Junction Depth (NJD) and oxide thickness (tox) are analyzed on device performances such as Sub-threshold Slope (SS), Drain Induced Barrier Lowering (DIBL) and threshold voltage. Results: The results of the proposed work are evaluated with the Rectangular Recessed Channel-Silicon On Insulator (RRC-SOI) MOSFET keeping the metal workfunction constant throughout the gate region. Furthermore, an analytical model is developed using 2D Poisson’s equation and threshold voltage is estimated in terms of minimum surface potential. Conclusion: In this work, the impact of Negative Junction Depth (NJD) on minimum surface potential and the drain current are also evaluated. It is observed from the analysis that the analog switching performance of WMRRC-SOI MOSFET surpasses RRC-SOI MOSFET in terms of better driving capability, high Ion/Ioff ratio, minimized Short Channel Effects (SCEs) and hot carrier immunity. Results are simulated using 2D Sentaurus TCAD simulator for validation of the proposed structure.

scholarly journals pH Sensing Characteristics of CuS/ZnO Thin Film Implemented as EGFET

2018 ◽  
Vol 1083 ◽  
pp. 012055 ◽  
Author(s):  
Fayroz A. Sabah ◽  
Naser M. Ahmed ◽  
Z. Hassan
Keyword(s):  
Thin Film ◽  
Zno Thin Film ◽  
Ph Sensing ◽  
Sensing Characteristics

Fluorescence pH Sensing Characteristics and Applications of Universal pH-indicator Paper

2018 ◽  
Vol 39 (6) ◽  
pp. 877-883
Author(s):  
张巍巍 ZHANG Wei-wei ◽  
赵小兵 ZHAO Xiao-bing ◽  
徐如辉 XU Ru-hui
Keyword(s):  
Ph Sensing ◽  
Ph Indicator ◽  
Sensing Characteristics

An analytical model for coplanar waveguide on silicon-on-insulator substrate with conformal mapping technique

2011 ◽  
Vol 20 (1) ◽  
pp. 010210 ◽  
Author(s):  
Da-Wei He ◽  
Xin-Hong Cheng ◽  
Zhong-Jian Wang ◽  
Da-Wei Xu ◽  
Zhao-Rui Song ◽  
...  
Keyword(s):  
Conformal Mapping ◽  
Analytical Model ◽  
Coplanar Waveguide ◽  
Silicon On Insulator ◽  
Mapping Technique ◽  
Insulator Substrate

Nano-IGZO layer for EGFET in pH sensing characteristics

2013 ◽  
Author(s):  
Chia-Ming Yang ◽  
Jer-Chyi Wang ◽  
Tzu-Wen Chiang ◽  
Yi-Ting Lin ◽  
Teng-Wei Juan ◽  
...  
Keyword(s):  
Ph Sensing ◽  
Sensing Characteristics
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