Threshold gate voltage and subthreshold swing of the ultrathin silicon-on-insulator field effect transistor: Analytical model

2012 ◽  
Vol 112 (12) ◽  
pp. 124517 ◽  
Author(s):  
V. Dobrovolsky ◽  
F. Sizov
Keyword(s):  
Analytical Model ◽  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon On Insulator ◽  
Subthreshold Swing ◽  
Effect Transistor ◽  
Threshold Gate

scholarly journals Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1415 ◽  
Author(s):  
Jaehong Lee ◽  
Garam Kim ◽  
Sangwan Kim
Keyword(s):  
Gate Voltage ◽  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Subthreshold Swing ◽  
Gate Bias ◽  
Back Gate ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Aided Design

In this study, the effects of back-gate bias on the subthreshold swing (S) of a tunnel field-effect transistor (TFET) were discussed. The electrostatic characteristics of the back-gated TFET were obtained using technology computer-aided design (TCAD) simulation and were explained using the concepts of turn-on and inversion voltages. As a result, S decreased, when the back-gate voltage increased; this behavior is attributed to the resultant increase in inversion voltage. In addition, it was found that the on–off current ratio of the TFET increased with a decrease in S due to the back-gate voltage.

scholarly journals Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4213
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Silicon On Insulator ◽  
Sodium Ion ◽  
Ion Sensor ◽  
Highly Sensitive ◽  
Selective Membrane ◽  
Dual Gate ◽  
Effect Transistor

In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.

Two dimensional analytical model for a reconfigurable field effect transistor

2018 ◽  
Vol 114 ◽  
pp. 62-74 ◽  
Author(s):  
R. Ranjith ◽  
Remya Jayachandran ◽  
K.J. Suja ◽  
Rama S. Komaragiri
Keyword(s):  
Analytical Model ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Two Dimensional ◽  
Effect Transistor

scholarly journals Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor

2003 ◽  
Vol 93 (2) ◽  
pp. 1230-1240 ◽  
Author(s):  
M. D. Croitoru ◽  
V. N. Gladilin ◽  
V. M. Fomin ◽  
J. T. Devreese ◽  
W. Magnus ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Quantum Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Effect Transistor
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