Low surface damage during ohmic contact formation in AlGaN/GaN HEMT by selective laser annealing

2019 ◽  
Vol 55 (11) ◽  
pp. 658-660
Author(s):  
Mingchen Hou ◽  
Gang Xie ◽  
Kuang Sheng
Keyword(s):  
Ohmic Contact ◽  
Laser Annealing ◽  
Surface Damage ◽  
Contact Formation ◽  
Gan Hemt ◽  
Ohmic Contact Formation

Low-Temperature Ohmic Contact Formation in AlN/GaN HEMT Using Microwave Annealing

2017 ◽  
Vol 64 (3) ◽  
pp. 1385-1389 ◽  
Author(s):  
Lin-Qing Zhang ◽  
Zhuo Liu ◽  
Sheng-Xun Zhao ◽  
Min-Zhi Lin ◽  
Peng-Fei Wang
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Contact Formation ◽  
Microwave Annealing ◽  
Gan Hemt ◽  
Ohmic Contact Formation

Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiC

2020 ◽  
Vol 1004 ◽  
pp. 718-724
Author(s):  
Carsten Hellinger ◽  
Oleg Rusch ◽  
Mathias Rommel ◽  
Anton J. Bauer ◽  
Tobias Erlbacher
Keyword(s):  
Crystal Structure ◽  
Pulse Duration ◽  
Ohmic Contact ◽  
Laser Annealing ◽  
Voltage Drop ◽  
Pulsed Laser ◽  
Electrical Measurements ◽  
Low Resistance ◽  
Contact Formation ◽  
Ohmic Contact Formation

In this work, pulsed-laser-based tempering was applied for post-implant annealing of n-type N-doped 4H-SiC in order to electrically activate the dopants and to rebuild the crystal structure. The annealing was performed by a frequency-tripled Nd:YVO4 laser with a pulse duration of 60 ns. To evaluate the effects of post-implant annealing, JBS diodes were electrically characterized. The results were compared with implanted, not post-annealed JBS diodes. The electrical measurements showed a significant on-state voltage drop of 40 mV at 6 A for post-implant laser annealed diodes compared to not post-implant annealed diodes.

Laser Annealing Simulations of Metallisations Deposited on 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 502-505
Author(s):  
Clement Berger ◽  
Jean François Michaud ◽  
David Chouteau ◽  
Daniel Alquier
Keyword(s):  
Finite Elements ◽  
Low Temperature ◽  
Ohmic Contact ◽  
Laser Annealing ◽  
Finite Elements Method ◽  
Contact Formation ◽  
Thermal Simulations ◽  
Ohmic Contact Formation

Based on finite elements method, thermal simulations were conducted to reproduce a laser annealing of several common metals deposited on 4H-SiC. We estimated the temperature reached at the metal/4H-SiC interface to check the possibility to achieve ohmic contact formation through laser annealing. An optimization of Al/Ti/4H-SiC stacking was also considered. Simulations highlighted the low temperature of the non-irradiated SiC face that allows using grinded wafer.

Micron-Scale Annealing for Ohmic Contact Formation Applied in GaN HEMT Gate-First Technology

2018 ◽  
Vol 39 (12) ◽  
pp. 1896-1899 ◽  
Author(s):  
Zhikun Liu ◽  
Dingbo Chen ◽  
Lijun Wan ◽  
Guoqiang Li
Keyword(s):  
Ohmic Contact ◽  
Contact Formation ◽  
Gan Hemt ◽  
Ohmic Contact Formation

High resolution physical analysis of ohmic contact formation at GaN-HEMT devices

2017 ◽  
Vol 76-77 ◽  
pp. 338-343 ◽  
Author(s):  
A. Graff ◽  
M. Simon-Najasek ◽  
F. Altmann ◽  
J. Kuzmik ◽  
D. Gregušová ◽  
...  
Keyword(s):  
High Resolution ◽  
Ohmic Contact ◽  
Physical Analysis ◽  
Contact Formation ◽  
Gan Hemt ◽  
Ohmic Contact Formation

Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN

2008 ◽  
Vol 41 (17) ◽  
pp. 175105
Author(s):  
Yow-Jon Lin ◽  
Feng-Tso Chien ◽  
Ching-Ting Lee ◽  
Chi-Shin Lin ◽  
Yang-Chun Liu
Keyword(s):  
Ohmic Contact ◽  
Contact Formation ◽  
Ohmic Contact Formation

Al-nGaAs ohmic contact formation by H2SeO3 treatment and annealing

2001 ◽  
Author(s):  
Sarunas Meskinis ◽  
Kestutis Slapikas ◽  
R. Gudaitis
Keyword(s):  
Ohmic Contact ◽  
Contact Formation ◽  
Ohmic Contact Formation

Ohmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature Annealing

2000 ◽  
Vol 338-342 ◽  
pp. 1619-1619
Author(s):  
L.S. Tan ◽  
A. Raman ◽  
K.M. Ng ◽  
S.J. Chua ◽  
A.T.S. Wee ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Low Temperature ◽  
Ohmic Contact ◽  
Science And Technology ◽  
Contact Formation ◽  
Low Temperature Annealing ◽  
Silicon Doped ◽  
Ohmic Contact Formation ◽  
Double Publication

“removed due to double publication”. The original paper: Journal: Semiconductor Science and Technology Create an alertIssue Volume 15, Number 6 Citation: L S Tan et al 2000 Semicond. Sci. Technol. 15 585 doi: 10.1088/0268-1242/15/6/317 can be accesses at IOP: http://iopscience.iop.org/0268-1242/15/6/317

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