Analysis of Dual Gate Structures Using Double-Well and WKB Quantization Rules

2016 ◽  
Vol 63 (9) ◽  
pp. 3627-3635
Author(s):  
Amr M. Bayoumi
Keyword(s):  
Dual Gate ◽  
Quantization Rules

Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

1993 ◽  
Vol 3 (9) ◽  
pp. 1719-1728
Author(s):  
P. Dollfus ◽  
P. Hesto ◽  
S. Galdin ◽  
C. Brisset
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Dual Gate

Nanoprobing Application on Characterization of 6T-SRAM Single Bit Failures with Different Gox Breakdown Defect

2006 ◽  
Author(s):  
Cheng-Piao Lin ◽  
Chin-Hsin Tang ◽  
Cheng-Hsu Wu ◽  
Cheng-Chun Ting
Keyword(s):  
Copper Metallization ◽  
Physical Analysis ◽  
Electrical Characteristics ◽  
Gate Leakage Current ◽  
Data Retention ◽  
Simulation Data ◽  
Failure Data ◽  
Dual Gate ◽  
Soft Breakdown

Abstract This paper analyzes several SRAM failures using nano-probing technique. Three SRAM single bit failures with different kinds of Gox breakdown defects analyzed are gross function single bit failure, data retention single bit failure, and special data retention single bit failure. The electrical characteristics of discrete 6T-SRAM cells with soft breakdown are discussed and correlated to evidences obtained from physical analysis. The paper also verifies many previously published simulation data. It utilizes a 6T-SRAM vehicle consisting of a large number of SRAM cells fabricated by deep sub-micron, dual gate, and copper metallization processes. The data obtained from this paper indicates that Gox breakdown location within NMOS pull-down device has larger a impact on SRAM stability than magnitude of gate leakage current, which agrees with previously published simulation data.

Dual-gate gallium-arsenide microwave field-effect transistor

1971 ◽  
Vol 7 (22) ◽  
pp. 661 ◽  
Author(s):  
J.A. Turner ◽  
A.J. Waller ◽  
E. Kelly ◽  
D. Parker
Keyword(s):  
Gallium Arsenide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Microwave Field ◽  
Dual Gate ◽  
Effect Transistor

Robust n/sup +//p/sup +/ dual-gate cmos device fabrication using dopant drive-out technique

2005 ◽  
Author(s):  
D.C.H. Yu ◽  
K.H. Lee ◽  
A. Kornblit ◽  
C.C. Fu ◽  
R.H. Yan ◽  
...  
Keyword(s):  
Device Fabrication ◽  
Dual Gate

Flexible Dual-Gate MoS₂ Neuromorphic Transistors on Freestanding Proton-Conducting Chitosan Membranes

2021 ◽  
pp. 1-5
Author(s):  
Chunsheng Chen ◽  
Yongli He ◽  
Li Zhu ◽  
Ying Zhu ◽  
Yi Shi ◽  
...  
Keyword(s):  
Proton Conducting ◽  
Dual Gate ◽  
Chitosan Membranes

Dual gate synthetic WS2 MOSFETs with 120μS/μm Gm 2.7μF/cm2 capacitance and ambipolar channel

2020 ◽  
Author(s):  
Dennis Lin ◽  
Xiangyu Wu ◽  
Daire Cott ◽  
Devin Verreck ◽  
Benjamin Groven ◽  
...  
Keyword(s):  
Dual Gate

scholarly journals Equivalent Circuit Modeling of a Dual-Gate Graphene FET

Electronics ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 63
Author(s):  
Saima Hasan ◽  
Abbas Z. Kouzani ◽  
M A Parvez Mahmud
Keyword(s):  
Equivalent Circuit ◽  
Gate Voltage ◽  
Voltage Dependence ◽  
Drain Current ◽  
Bilayer Graphene ◽  
Circuit Modeling ◽  
Equivalent Circuit Modeling ◽  
Dual Gate ◽  
Source Voltage ◽  
Transit Frequency

This paper presents a simple and comprehensive model of a dual-gate graphene field effect transistor (FET). The quantum capacitance and surface potential dependence on the top-gate-to-source voltage were studied for monolayer and bilayer graphene channel by using equivalent circuit modeling. Additionally, the closed-form analytical equations for the drain current and drain-to-source voltage dependence on the drain current were investigated. The distribution of drain current with voltages in three regions (triode, unipolar saturation, and ambipolar) was plotted. The modeling results exhibited better output characteristics, transfer function, and transconductance behavior for GFET compared to FETs. The transconductance estimation as a function of gate voltage for different drain-to-source voltages depicted a proportional relationship; however, with the increase of gate voltage this value tended to decline. In the case of transit frequency response, a decrease in channel length resulted in an increase in transit frequency. The threshold voltage dependence on back-gate-source voltage for different dielectrics demonstrated an inverse relationship between the two. The analytical expressions and their implementation through graphical representation for a bilayer graphene channel will be extended to a multilayer channel in the future to improve the device performance.

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