Analytical Modeling of Channel Potential and Threshold Voltage of Double-Gate Junctionless FETs With a Vertical Gaussian-Like Doping Profile

Balraj Singh; Deepti Gola; Kunal Singh; Ekta Goel; Sanjay Kumar; Satyabrata Jit

doi:10.1109/ted.2016.2556227

Analytical Modeling of Channel Potential and Threshold Voltage of Double-Gate Junctionless FETs With a Vertical Gaussian-Like Doping Profile

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2556227 ◽

2016 ◽

Vol 63 (6) ◽

pp. 2299-2305 ◽

Cited By ~ 46

Author(s):

Balraj Singh ◽

Deepti Gola ◽

Kunal Singh ◽

Ekta Goel ◽

Sanjay Kumar ◽

...

Keyword(s):

Threshold Voltage ◽

Analytical Modeling ◽

Doping Profile ◽

Double Gate ◽

Channel Potential

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A 2D analytical model of the channel potential and threshold voltage of Double-Gate (DG) MOSFETs with vertical Gaussian doping profile

2009 International Multimedia, Signal Processing and Communication Technologies ◽

10.1109/mspct.2009.5164172 ◽

2009 ◽

Cited By ~ 4

Author(s):

P.K. Tiwari ◽

S. Kumar ◽

S. Mittal ◽

V. Srivastava ◽

U. Pandey ◽

...

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Doping Profile ◽

Double Gate ◽

Channel Potential

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Analytical modeling of random discrete traps induced threshold voltage fluctuations in double-gate MOSFET with HfO2/SiO2 gate dielectric stack

Microelectronics Reliability ◽

10.1016/j.microrel.2019.04.019 ◽

2019 ◽

Vol 99 ◽

pp. 87-95

Author(s):

Sriram S.R. ◽

Bindu B.

Keyword(s):

Threshold Voltage ◽

Analytical Modeling ◽

Gate Dielectric ◽

Double Gate ◽

Voltage Fluctuations ◽

Double Gate Mosfet

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A Threshold Voltage Model for the Short-Channel Double-Gate (DG) MOSFETs with a Vertical Gaussian Doping Profile

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2011.1151 ◽

2011 ◽

Vol 6 (2) ◽

pp. 207-213

Author(s):

Pramod Kumar Tiwari ◽

S. Jit

Keyword(s):

Threshold Voltage ◽

Doping Profile ◽

Double Gate ◽

Short Channel ◽

Threshold Voltage Model

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Analytical Modeling of Potential Distribution and Threshold Voltage of Gate Underlap DG MOSFETs with a Source/Drain Lateral Gaussian Doping Profile

Journal of Electronic Materials ◽

10.1007/s11664-015-4254-y ◽

2016 ◽

Vol 45 (4) ◽

pp. 2184-2192 ◽

Cited By ~ 7

Author(s):

Kunal Singh ◽

Mirgender Kumar ◽

Ekta Goel ◽

Balraj Singh ◽

Sarvesh Dubey ◽

...

Keyword(s):

Threshold Voltage ◽

Potential Distribution ◽

Analytical Modeling ◽

Doping Profile ◽

Gate Underlap

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Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs

2017 MIXDES - 24th International Conference "Mixed Design of Integrated Circuits and Systems ◽

10.23919/mixdes.2017.8005168 ◽

2017 ◽

Cited By ~ 1

Author(s):

Michael Graef ◽

Franziska Hain ◽

Fabian Hosenfeld ◽

Fabian Horst ◽

Atieh Farokhnejad ◽

...

Keyword(s):

Threshold Voltage ◽

Analytical Modeling ◽

Double Gate ◽

Short Channel

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Analytical modeling and numerical simulation of novel double-gate InGaAs vertical nanowire transistor device for threshold voltage tuning and improved performance

Engineering Science and Technology an International Journal ◽

10.1016/j.jestch.2016.08.014 ◽

2016 ◽

Vol 19 (4) ◽

pp. 1857-1863 ◽

Cited By ~ 3

Author(s):

Subha Subramaniam ◽

Sangeeta M. Joshi ◽

R.N. Awale

Keyword(s):

Numerical Simulation ◽

Threshold Voltage ◽

Analytical Modeling ◽

Double Gate ◽

Nanowire Transistor ◽

Improved Performance ◽

Voltage Tuning

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Analytical modeling of channel potential and threshold voltage of triple material gate AlGaN/GaN HEMT including trapped and polarization‐induced charges

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2476 ◽

2018 ◽

Vol 32 (1) ◽

pp. e2476 ◽

Cited By ~ 1

Author(s):

Md Tashfiq Bin Kashem ◽

Samia Subrina

Keyword(s):

Threshold Voltage ◽

Analytical Modeling ◽

Gan Hemt ◽

Channel Potential

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Analytical Modeling of a Double Gate MOSFET Considering Source/Drain Lateral Gaussian Doping Profile

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2282632 ◽

2013 ◽

Vol 60 (11) ◽

pp. 3705-3709 ◽

Cited By ~ 32

Author(s):

Ashutosh Nandi ◽

Ashok K. Saxena ◽

Sudeb Dasgupta

Keyword(s):

Analytical Modeling ◽

Doping Profile ◽

Double Gate ◽

Double Gate Mosfet

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Analytical modeling of threshold voltage of a double gate junction less field effect transistor

2013 2nd International Conference on Advances in Electrical Engineering (ICAEE) ◽

10.1109/icaee.2013.6750315 ◽

2013 ◽

Cited By ~ 2

Author(s):

Ayed Al Sayem ◽

Yeasir Arafat ◽

Md. Mushfiqur Rahman

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor

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A physically based analytical modeling of threshold voltage control for fully-depleted SOI double gate NMOS-PMOS Flexible-FET

2012 IEEE International Conference on Electro/Information Technology ◽

10.1109/eit.2012.6220737 ◽

2012 ◽

Author(s):

Nadim Chowdhury ◽

Zubair Al Azim ◽

Imtiaz Ahmed ◽

Iftikhar Ahmad Niaz ◽

Md. Hasibul Alam ◽

...

Keyword(s):

Threshold Voltage ◽

Analytical Modeling ◽

Voltage Control ◽

Double Gate ◽

Fully Depleted ◽

Physically Based

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