Analytical modeling of channel potential and threshold voltage of triple material gate AlGaN/GaN HEMT including trapped and polarization‐induced charges

2018 ◽  
Vol 32 (1) ◽  
pp. e2476 ◽  
Author(s):  
Md Tashfiq Bin Kashem ◽  
Samia Subrina
Keyword(s):  
Threshold Voltage ◽  
Analytical Modeling ◽  
Gan Hemt ◽  
Channel Potential

Analytical Modeling of Channel Potential and Threshold Voltage of Double-Gate Junctionless FETs With a Vertical Gaussian-Like Doping Profile

2016 ◽  
Vol 63 (6) ◽  
pp. 2299-2305 ◽  
Author(s):  
Balraj Singh ◽  
Deepti Gola ◽  
Kunal Singh ◽  
Ekta Goel ◽  
Sanjay Kumar ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Analytical Modeling ◽  
Doping Profile ◽  
Double Gate ◽  
Channel Potential

Recessed-gate enhancement-mode GaN HEMT with high threshold voltage

2005 ◽  
Vol 41 (7) ◽  
pp. 449 ◽  
Author(s):  
W.B. Lanford ◽  
T. Tanaka ◽  
Y. Otoki ◽  
I. Adesida
Keyword(s):  
Threshold Voltage ◽  
High Threshold ◽  
Enhancement Mode ◽  
Gan Hemt ◽  
Recessed Gate

Analytical Modeling of Potential Distribution and Threshold Voltage of Gate Underlap DG MOSFETs with a Source/Drain Lateral Gaussian Doping Profile

2016 ◽  
Vol 45 (4) ◽  
pp. 2184-2192 ◽  
Author(s):  
Kunal Singh ◽  
Mirgender Kumar ◽  
Ekta Goel ◽  
Balraj Singh ◽  
Sarvesh Dubey ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Potential Distribution ◽  
Analytical Modeling ◽  
Doping Profile ◽  
Gate Underlap
Sign in / Sign up

Export Citation Format

Share Document