Joule Heating to Enhance the Performance of a Gate-All-Around Silicon Nanowire Transistor

Chang-Hoon Jeon; Jun-Young Park; Myeong-Lok Seol; Dong-Il Moon; Jae Hur; Hagyoul Bae; Seung-Bae Jeon; Yang-Kyu Choi

doi:10.1109/ted.2016.2551751

Joule Heating to Enhance the Performance of a Gate-All-Around Silicon Nanowire Transistor

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2551751 ◽

2016 ◽

Vol 63 (6) ◽

pp. 2288-2292 ◽

Cited By ~ 3

Author(s):

Chang-Hoon Jeon ◽

Jun-Young Park ◽

Myeong-Lok Seol ◽

Dong-Il Moon ◽

Jae Hur ◽

...

Keyword(s):

Joule Heating ◽

Silicon Nanowire ◽

Nanowire Transistor

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A Poly‐Crystalline Silicon Nanowire Transistor with Independently Controlled Double‐Gate for Physically Unclonable Function by Multi‐States and Self‐Destruction

Advanced Electronic Materials ◽

10.1002/aelm.202000989 ◽

2021 ◽

pp. 2000989

Author(s):

Ji‐Man Yu ◽

Gyeong‐Jun Yun ◽

Moon‐Seok Kim ◽

Joon‐Kyu Han ◽

Da‐Jin Kim ◽

...

Keyword(s):

Crystalline Silicon ◽

Silicon Nanowire ◽

Double Gate ◽

Nanowire Transistor

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Effect of independently sized gates on the delay of reconfigurable silicon nanowire transistor based circuits

EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon ◽

10.1109/ulis.2015.7063762 ◽

2015 ◽

Cited By ~ 2

Author(s):

Jens Trommer ◽

Stefan Slesazeck ◽

Walter M. Weber ◽

Andre Heinzig ◽

Tim Baldauf ◽

...

Keyword(s):

Silicon Nanowire ◽

Nanowire Transistor

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Quantum Threshold Voltage Modeling of Short Channel Quad Gate Silicon Nanowire Transistor

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2009.2033380 ◽

2011 ◽

Vol 10 (1) ◽

pp. 121-128 ◽

Cited By ~ 13

Author(s):

P. Rakesh Kumar ◽

Santanu Mahapatra

Keyword(s):

Threshold Voltage ◽

Silicon Nanowire ◽

Short Channel ◽

Nanowire Transistor

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Effects of Quantized Energy Levels of QDs Confined in Asymmetric Barriers within Silicon Nanowire Transistor

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306683 ◽

2006 ◽

Author(s):

Jiezhi Chen ◽

Yi Shi ◽

Lin Pu ◽

Youdou Zheng ◽

Shibing Long ◽

...

Keyword(s):

Silicon Nanowire ◽

Energy Levels ◽

Nanowire Transistor ◽

Asymmetric Barriers

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Effects of Asymmetric Local Joule Heating on Silicon Nanowire-Based Devices Formed by Dielectrophoresis Alignment Across Pt Electrodes

Nanoscale Research Letters ◽

10.1186/s11671-017-2423-z ◽

2018 ◽

Vol 13 (1) ◽

Cited By ~ 2

Author(s):

Hsiang-Hsi Ho ◽

Chun-Lung Lin ◽

Wei-Che Tsai ◽

Liang-Zheng Hong ◽

Cheng-Han Lyu ◽

...

Keyword(s):

Joule Heating ◽

Silicon Nanowire ◽

Pt Electrodes

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Radial bulk-mode vibrations in a gate-all-around silicon nanowire transistor

2012 IEEE 25th International Conference on Micro Electro Mechanical Systems (MEMS) ◽

10.1109/memsys.2012.6170423 ◽

2012 ◽

Author(s):

M. Ziaei-Moayyed ◽

P. Resnick ◽

B. Draper ◽

M. Okandan

Keyword(s):

Silicon Nanowire ◽

Nanowire Transistor ◽

Bulk Mode

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Effects of Asymmetric Local Joule Heating on Silicon Nanowire-Based Devices and Their Applications

ECS Meeting Abstracts ◽

10.1149/ma2016-02/34/2237 ◽

2016 ◽

Keyword(s):

Joule Heating ◽

Silicon Nanowire

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A 2D Unified Subthreshold Drain Current Investigation for Junctionless Cylindrical Surrounding Gate(JCSG) Silicon Nanowire Transistor

Silicon ◽

10.1007/s12633-021-01292-0 ◽

2021 ◽

Author(s):

S. Manikandan ◽

P. Suveetha Dhanaselvam ◽

M. Karthigai Pandian

Keyword(s):

Silicon Nanowire ◽

Drain Current ◽

Current Investigation ◽

Nanowire Transistor ◽

Surrounding Gate

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A New Approach for Dimensional Optimization of Inverters in 6T-Static Random-Access Memory Cell Based on Silicon Nanowire Transistor

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2017.12608 ◽

2017 ◽

Vol 17 (2) ◽

pp. 1061-1067

Author(s):

Yasir Hashim

Keyword(s):

Silicon Nanowire ◽

Random Access ◽

Memory Cell ◽

Random Access Memory ◽

Static Random Access Memory ◽

Access Memory ◽

New Approach ◽

Nanowire Transistor ◽

Dimensional Optimization

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A comparative study of NEGF and DDMS models in the GAA silicon nanowire transistor

International Journal of Electronics ◽

10.1080/00207217.2012.669709 ◽

2012 ◽

Vol 99 (9) ◽

pp. 1299-1307 ◽

Cited By ~ 6

Author(s):

Reza Hosseini ◽

Morteza Fathipour ◽

Rahim Faez

Keyword(s):

Comparative Study ◽

Silicon Nanowire ◽

Nanowire Transistor

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