A Surface Potential-Based Gate-Leakage Current Model for Organic Thin-Film Transistors

2015 ◽  
Vol 62 (12) ◽  
pp. 4225-4230 ◽  
Author(s):  
Guangwei Xu ◽  
Ling Li ◽  
Ming Liu ◽  
Wei Wang ◽  
Long Wang ◽  
...  
2011 ◽  
Vol 20 (04) ◽  
pp. 727-748
Author(s):  
ALEJANDRA CASTRO-CARRANZA ◽  
BENJAMIN IÑIGUEZ ◽  
JOSEP PALLARÈS

In this work, we review the physical properties of organic materials and transistors, discussing especially the charge transport mechanisms. Finally, we present an analytical and continuous charge model for Organic Thin Film Transistors (OTFTs) from which analytical expressions of all the total capacitances are obtained. They are developed and finally written as continuous explicit functions of the applied voltage, resulting in a complete charge-based small-signal model composed by a unified charge control model derived from Poisson equation assuming an exponential density of localized states. This charge model was developed from a previously proposed analytical DC current model assuming a hopping based transport. Therefore our complete small signal model has the potential to be successfully used in circuit simulators for the design of OTFTs.


2006 ◽  
Vol 89 (9) ◽  
pp. 092101 ◽  
Author(s):  
Sunho Jeong ◽  
Dongjo Kim ◽  
Sul Lee ◽  
Bong-Kyun Park ◽  
Jooho Moon

2019 ◽  
Vol 31 (19) ◽  
pp. 1900917 ◽  
Author(s):  
Felix Dollinger ◽  
Kyung‐Geun Lim ◽  
Yang Li ◽  
Erjuan Guo ◽  
Peter Formánek ◽  
...  

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