Organic-inorganic hybrid dielectrics with low leakage current for organic thin-film transistors

2006 ◽  
Vol 89 (9) ◽  
pp. 092101 ◽  
Author(s):  
Sunho Jeong ◽  
Dongjo Kim ◽  
Sul Lee ◽  
Bong-Kyun Park ◽  
Jooho Moon
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Inorganic Hybrid ◽  
Low Leakage ◽  
Low Leakage Current

scholarly journals Vertical Organic Thin‐Film Transistors with an Anodized Permeable Base for Very Low Leakage Current

2019 ◽  
Vol 31 (19) ◽  
pp. 1900917 ◽  
Author(s):  
Felix Dollinger ◽  
Kyung‐Geun Lim ◽  
Yang Li ◽  
Erjuan Guo ◽  
Peter Formánek ◽  
...  
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Low Leakage ◽  
Low Leakage Current

scholarly journals Tetracene Based OTFT with Nd2O3-dielectric Layer

2010 ◽  
Vol 2 (2) ◽  
pp. 214-220 ◽  
Author(s):  
D. Saikia ◽  
R. Sarma ◽  
P. Saikia ◽  
P. K. Saikia
Keyword(s):  
Thin Film ◽  
Rare Earth ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Hole Concentration ◽  
Rare Earth Oxide ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Low Leakage ◽  
Low Leakage Current

Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10-4 cm2/V.s, ON-OFF ratio 3.3x102, sub-threshold swing 0.06 V/decade and hole concentration 8.74x1017 cm-3. Keywords: Organic thin film transistors; Tetracene; Rare earth oxide; Trap density. © 2010 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved. DOI: 10.3329/jsr.v2i2.4094               J. Sci. Res. 2 (2), 214-220 (2010) 

UV-directly patternable organic–inorganic hybrid composite dielectrics for organic thin-film transistors

2012 ◽  
Vol 13 (12) ◽  
pp. 3302-3309 ◽  
Author(s):  
Chunyu Zhang ◽  
He Wang ◽  
Zuosen Shi ◽  
Zhanchen Cui ◽  
Donghang Yan
Keyword(s):  
Thin Film ◽  
Hybrid Composite ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Inorganic Hybrid

Densely cross-linked polysiloxane dielectric for organic thin-film transistors with enhanced electrical stability

2019 ◽  
Vol 7 (19) ◽  
pp. 5821-5829 ◽  
Author(s):  
Joo-Young Kim ◽  
Eun Kyung Lee ◽  
Jiyoung Jung ◽  
Don-Wook Lee ◽  
Youngjun Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Hybrid Material ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Organic Thin Film Transistors ◽  
Cross Linking ◽  
Urethane Acrylate ◽  
Organic Thin Film ◽  
Electrical Stability ◽  
Inorganic Hybrid

A solution-processable organic–inorganic hybrid material composed of a polysiloxane urethane acrylate composite (PSUAC) was developed through a dual cross-linking mechanism and satisfies all the requirements for use as a gate dielectric for flexible organic thin-film transistors (OTFTs).

Tuning the contact resistance in organic thin-film transistors with an organic–inorganic hybrid interlayer

2011 ◽  
Vol 50 (2) ◽  
pp. 191-197 ◽  
Author(s):  
Jun Li ◽  
Fan Zhou ◽  
Hua-Ping Lin ◽  
Xue-Yin Jiang ◽  
Wen-Qing Zhu ◽  
...  
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Inorganic Hybrid

Universal solution-processed high-k amorphous oxide dielectrics for high-performance organic thin film transistors

RSC Advances ◽  
2014 ◽  
Vol 4 (29) ◽  
pp. 14890-14895 ◽  
Author(s):  
Xurong Zhao ◽  
Sumei Wang ◽  
Aiju Li ◽  
Jun Ouyang ◽  
Guodong Xia ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Dielectric Films ◽  
Operating Voltage ◽  
Polymer Modification ◽  
Organic Thin Film ◽  
Solution Processed ◽  
Low Leakage

Solution-processed high-k ZrTiOx dielectric films achieve a k value and capacitance of 53 and 467 nF cm−2, and a low leakage current of 4 × 10−8 A cm−2 with polymer modification. High-performance organic thin film transistors with a carrier mobility of 0.58 cm2 V−1 s−1, and a low operating voltage of 6 V were realized with ZrTiOx dielectric films.

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