Solution-Processed Low-Operating-Voltage Thin-Film Transistors With Bottom-Gate Top-Contact Structure

2015 ◽  
Vol 62 (3) ◽  
pp. 875-881 ◽  
Author(s):  
Xifeng Li ◽  
Leyong Zhu ◽  
Yana Gao ◽  
Jianhua Zhang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Contact Structure ◽  
Operating Voltage ◽  
Solution Processed ◽  
Top Contact ◽  
Bottom Gate

Low-Operating-Voltage Solution-Processed InZnO Thin-Film Transistors Using High-kSrTa2O6

2012 ◽  
Vol 51 (3S) ◽  
pp. 03CB05 ◽  
Author(s):  
Li Lu ◽  
Yuta Miura ◽  
Takashi Nishida ◽  
Masahiro Echizen ◽  
Yasuaki Ishikawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Operating Voltage ◽  
Solution Processed

Universal solution-processed high-k amorphous oxide dielectrics for high-performance organic thin film transistors

RSC Advances ◽  
2014 ◽  
Vol 4 (29) ◽  
pp. 14890-14895 ◽  
Author(s):  
Xurong Zhao ◽  
Sumei Wang ◽  
Aiju Li ◽  
Jun Ouyang ◽  
Guodong Xia ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Dielectric Films ◽  
Operating Voltage ◽  
Polymer Modification ◽  
Organic Thin Film ◽  
Solution Processed ◽  
Low Leakage

Solution-processed high-k ZrTiOx dielectric films achieve a k value and capacitance of 53 and 467 nF cm−2, and a low leakage current of 4 × 10−8 A cm−2 with polymer modification. High-performance organic thin film transistors with a carrier mobility of 0.58 cm2 V−1 s−1, and a low operating voltage of 6 V were realized with ZrTiOx dielectric films.

Low-Operating-Voltage Solution-Processed InZnO Thin-Film Transistors Using High-$k$ SrTa$_{2}$O$_{6}$

2012 ◽  
Vol 51 ◽  
pp. 03CB05 ◽  
Author(s):  
Li Lu ◽  
Yuta Miura ◽  
Takashi Nishida ◽  
Masahiro Echizen ◽  
Yasuaki Ishikawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Operating Voltage ◽  
Solution Processed ◽  
High K

Experimental and numerical investigation of contact-area-limited doping for top-contact pentacene thin-film transistors with Schottky contact

2015 ◽  
Vol 17 (40) ◽  
pp. 26535-26540 ◽  
Author(s):  
Kei Noda ◽  
Yasuo Wada ◽  
Toru Toyabe
Keyword(s):  
Thin Film ◽  
Numerical Investigation ◽  
Contact Area ◽  
Thin Film Transistors ◽  
Schottky Contact ◽  
Contact Configuration ◽  
Top Contact ◽  
Bottom Gate

Effects of contact-area-limited doping for pentacene thin-film transistors with a bottom-gate, top-contact configuration were investigated.

Simple source/drain contact structure for solution-processed n-channel fullerene thin-film transistors

2012 ◽  
Vol 13 (4) ◽  
pp. 599-603 ◽  
Author(s):  
Fang-Chung Chen ◽  
Tzung-Han Tsai ◽  
Shang-Chieh Chien
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Contact Structure ◽  
Solution Processed

scholarly journals Controlled Synthesis of Poly(pentafluorostyrene-ran-methyl methacrylate) Copolymers by Nitroxide Mediated Polymerization and Their Use as Dielectric Layers in Organic Thin-film Transistors

Polymers ◽  
2020 ◽  
Vol 12 (6) ◽  
pp. 1231 ◽  
Author(s):  
Alexander J. Peltekoff ◽  
Mathieu N. Tousignant ◽  
Victoria E. Hiller ◽  
Owen A. Melville ◽  
Benoît H. Lessard
Keyword(s):  
Thin Film ◽  
Methyl Methacrylate ◽  
Thin Film Transistors ◽  
Copper Phthalocyanine ◽  
Organic Thin Film Transistors ◽  
Polymer Composition ◽  
Organic Thin Film ◽  
Top Contact ◽  
Nitroxide Mediated Polymerization ◽  
Bottom Gate

A library of statistically random pentafluorostyrene (PFS) and methyl methacrylate (MMA) copolymers with narrow molecular weight distributions was produced, using nitroxide mediated polymerization (NMP) to study the effect of polymer composition on the performance of bottom-gate top-contact organic thin-film transistors, when utilized as the dielectric medium. Contact angle measurements confirmed the ability to tune the surface properties of copolymer thin films through variation of its PFS/MMA composition, while impedance spectroscopy determined the effect of this variation on dielectric properties. Bottom-gate, top-contact copper phthalocyanine (CuPc) based organic thin-film transistors were fabricated using the random copolymers as a dielectric layer. We found that increasing the PFS content led to increased field-effect mobility, until a point after which the CuPc no longer adhered to the polymer dielectric.

Organic Semiconductors with Benzoic Acid Based Additives for Solution-Processed Thin Film Transistors

2021 ◽  
Vol 01 ◽  
Author(s):  
Ziyang Zhang ◽  
Zhengran He ◽  
Kyeiwaa Asare-Yeboah ◽  
Sheng Bi
Keyword(s):  
Thin Film ◽  
Benzoic Acid ◽  
Charge Transport ◽  
Organic Semiconductors ◽  
Thin Film Transistors ◽  
Acid Mixture ◽  
Organic Thin Film ◽  
Solution Processed ◽  
Hydrophobic Tail ◽  
Bottom Gate

Background: although solution-processed small molecular organic semiconductors have attracted great attention for organic electronic applications,the intrinsic crystal misorientation of the organic semiconductorsstill remains as a challenging issue. Objective: two benzoic acid-based additives, i.e. 4-propylbenzoic acid (RBA) and 4-octylbenzoic acid (OBA), were employed to regulate the crystal growth and charge transport of organic semiconductors. Methods: RBA and OBA were mixed with a π-conjugated organic semiconductor 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS pentacene), respectively. Organic thin film transistors (OTFTs) with different bottom-gate, top-contact and bottom-gate, bottom-contact configurations were fabricated to investigate charge transport. Results: RBA and OBA share a similar benzoic acid structure with the same hydrophilic head but differ in the length of hydrophobic tail. The benzoic acid-based additive forms a stratified self-assembled interfacial layer and maneuvers nucleation seed distribution via synergetic interactions with the silanol groups on silicon dioxide and with the bulky side chains of the semiconductor. The TIPS pentacene film with OBA additive exhibited a 10-fold reduction in misorientation angle, as compared to the counterpart with RBA. Conclusion: Distinct thin film morphology in terms of crystal alignment and grain width was observed and correlated to the hydrophobic tail length. In particular,OTFTs incorporating the TIPS pentacene/benzoic acid mixture as the active layer showed a mobility of up to 0.15 cm2/Vs.

scholarly journals Impact of dopant species on the interfacial trap density and mobility in amorphous In-X-Zn-O solution-processed thin-film transistors

2014 ◽  
Vol 115 (21) ◽  
pp. 214501 ◽  
Author(s):  
Mohammed Benwadih ◽  
J. A. Chroboczek ◽  
Gérard Ghibaudo ◽  
Romain Coppard ◽  
Dominique Vuillaume
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Trap Density ◽  
Solution Processed

Investigation of solution-processed amorphous SrInZnO thin film transistors

2011 ◽  
Vol 326 (1) ◽  
pp. 171-174 ◽  
Author(s):  
Doo Hyun Yoon ◽  
Si Joon Kim ◽  
Woong Hee Jeong ◽  
Dong Lim Kim ◽  
You Seung Rim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Solution Processed
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