Experimental and numerical investigation of contact-area-limited doping for top-contact pentacene thin-film transistors with Schottky contact

2015 ◽  
Vol 17 (40) ◽  
pp. 26535-26540 ◽  
Author(s):  
Kei Noda ◽  
Yasuo Wada ◽  
Toru Toyabe
Keyword(s):  
Thin Film ◽  
Numerical Investigation ◽  
Contact Area ◽  
Thin Film Transistors ◽  
Schottky Contact ◽  
Contact Configuration ◽  
Top Contact ◽  
Bottom Gate

Effects of contact-area-limited doping for pentacene thin-film transistors with a bottom-gate, top-contact configuration were investigated.

Current Enhancement with Contact-Area-Limited Doping for Bottom-Gate, Bottom-Contact Organic Thin-Film Transistors

2013 ◽  
Vol 52 (2R) ◽  
pp. 021602 ◽  
Author(s):  
Kei Noda ◽  
Yusuke Wakatsuki ◽  
Yuji Yamagishi ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
...  
Keyword(s):  
Thin Film ◽  
Contact Area ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Bottom Contact ◽  
Bottom Gate

scholarly journals Controlled Synthesis of Poly(pentafluorostyrene-ran-methyl methacrylate) Copolymers by Nitroxide Mediated Polymerization and Their Use as Dielectric Layers in Organic Thin-film Transistors

Polymers ◽  
2020 ◽  
Vol 12 (6) ◽  
pp. 1231 ◽  
Author(s):  
Alexander J. Peltekoff ◽  
Mathieu N. Tousignant ◽  
Victoria E. Hiller ◽  
Owen A. Melville ◽  
Benoît H. Lessard
Keyword(s):  
Thin Film ◽  
Methyl Methacrylate ◽  
Thin Film Transistors ◽  
Copper Phthalocyanine ◽  
Organic Thin Film Transistors ◽  
Polymer Composition ◽  
Organic Thin Film ◽  
Top Contact ◽  
Nitroxide Mediated Polymerization ◽  
Bottom Gate

A library of statistically random pentafluorostyrene (PFS) and methyl methacrylate (MMA) copolymers with narrow molecular weight distributions was produced, using nitroxide mediated polymerization (NMP) to study the effect of polymer composition on the performance of bottom-gate top-contact organic thin-film transistors, when utilized as the dielectric medium. Contact angle measurements confirmed the ability to tune the surface properties of copolymer thin films through variation of its PFS/MMA composition, while impedance spectroscopy determined the effect of this variation on dielectric properties. Bottom-gate, top-contact copper phthalocyanine (CuPc) based organic thin-film transistors were fabricated using the random copolymers as a dielectric layer. We found that increasing the PFS content led to increased field-effect mobility, until a point after which the CuPc no longer adhered to the polymer dielectric.

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

Top Contact Organic Thin Film Transistors with Ink Jet Printed Metal Electrodes

2007 ◽  
Vol 51 (5) ◽  
pp. 456 ◽  
Author(s):  
Kuo-Tong Lin ◽  
Chia-Hsun Chen ◽  
Ming-Huan Yang ◽  
Yuh-Zheng Lee ◽  
Kevin Cheng
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Metal Electrodes ◽  
Ink Jet ◽  
Top Contact

Low temperature processed p-type bottom gate microcrystalline silicon thin film transistors

2010 ◽  
pp. NA-NA
Author(s):  
O. Moustapha ◽  
A. Abramov ◽  
D. Daineka ◽  
M. Oudwan ◽  
Y. Bonnassieux ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
P Type ◽  
Bottom Gate

Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors

2014 ◽  
Vol 558 ◽  
pp. 279-282 ◽  
Author(s):  
Jae-Sung Kim ◽  
Min-Kyu Joo ◽  
Ming Xing Piao ◽  
Seung-Eon Ahn ◽  
Yong-Hee Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Contact Area ◽  
Thin Film Transistors ◽  
Extended Contact ◽  
Amorphous Ingazno

Effect of Surface Treatment of Gate-Insulator on Uniformity of Bottom-Gate ZnO Thin Film Transistors

2010 ◽  
Vol 13 (4) ◽  
pp. H101 ◽  
Author(s):  
Mamoru Furuta ◽  
Takashi Nakanishi ◽  
Mutsumi Kimura ◽  
Takahiro Hiramatsu ◽  
Tokiyoshi Matsuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Treatment ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Zno Thin Film ◽  
Bottom Gate ◽  
Effect Of Surface
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