scholarly journals Controlled Synthesis of Poly(pentafluorostyrene-ran-methyl methacrylate) Copolymers by Nitroxide Mediated Polymerization and Their Use as Dielectric Layers in Organic Thin-film Transistors

Polymers ◽  
2020 ◽  
Vol 12 (6) ◽  
pp. 1231 ◽  
Author(s):  
Alexander J. Peltekoff ◽  
Mathieu N. Tousignant ◽  
Victoria E. Hiller ◽  
Owen A. Melville ◽  
Benoît H. Lessard
Keyword(s):  
Thin Film ◽  
Methyl Methacrylate ◽  
Thin Film Transistors ◽  
Copper Phthalocyanine ◽  
Organic Thin Film Transistors ◽  
Polymer Composition ◽  
Organic Thin Film ◽  
Top Contact ◽  
Nitroxide Mediated Polymerization ◽  
Bottom Gate

A library of statistically random pentafluorostyrene (PFS) and methyl methacrylate (MMA) copolymers with narrow molecular weight distributions was produced, using nitroxide mediated polymerization (NMP) to study the effect of polymer composition on the performance of bottom-gate top-contact organic thin-film transistors, when utilized as the dielectric medium. Contact angle measurements confirmed the ability to tune the surface properties of copolymer thin films through variation of its PFS/MMA composition, while impedance spectroscopy determined the effect of this variation on dielectric properties. Bottom-gate, top-contact copper phthalocyanine (CuPc) based organic thin-film transistors were fabricated using the random copolymers as a dielectric layer. We found that increasing the PFS content led to increased field-effect mobility, until a point after which the CuPc no longer adhered to the polymer dielectric.

Top Contact Organic Thin Film Transistors with Ink Jet Printed Metal Electrodes

2007 ◽  
Vol 51 (5) ◽  
pp. 456 ◽  
Author(s):  
Kuo-Tong Lin ◽  
Chia-Hsun Chen ◽  
Ming-Huan Yang ◽  
Yuh-Zheng Lee ◽  
Kevin Cheng
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Metal Electrodes ◽  
Ink Jet ◽  
Top Contact

Polymer mask-weakening grain-boundary effect: towards high-performance organic thin-film transistors with mobility closing to 20 cm2 V−1 s−1

2020 ◽  
Vol 4 (10) ◽  
pp. 2990-2994
Author(s):  
Deyang Ji ◽  
Jie Li ◽  
Xiaosong Chen ◽  
Lin Li ◽  
Liqiang Li ◽  
...  
Keyword(s):  
Thin Film ◽  
High Resolution ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
High Performance ◽  
Boundary Effect ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Top Contact ◽  
Grain Boundary Effect

Polystyrene-based masks are fabricated to produce top-contact high-resolution (5 μm) electrodes. With this mask, the mobility of DPA-based thin-film transistors could reach 19.22 cm2 V−1 s−1, which is a new breakthrough for DPA thin-film transistors.

scholarly journals Effects of the F4TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors

Materials ◽  
2016 ◽  
Vol 9 (1) ◽  
pp. 46 ◽  
Author(s):  
Ching-Lin Fan ◽  
Wei-Chun Lin ◽  
Hsiang-Sheng Chang ◽  
Yu-Zuo Lin ◽  
Bohr-Ran Huang
Keyword(s):  
Thin Film ◽  
Performance Improvement ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Top Contact

Pentacene Organic Thin-Film Transistors with Dual-Gate Structure

2007 ◽  
Vol 124-126 ◽  
pp. 383-386
Author(s):  
Jae Bon Koo ◽  
Jung Wook Lim ◽  
Chan Hoe Ku ◽  
Sang Chul Lim ◽  
Jung Hun Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrostatic Potential ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Gate Structure ◽  
Dual Gate ◽  
Bottom Gate

We report on the fabrication of dual-gate pentacene organic thin-film transistors (OTFTs) using a plasma-enhanced atomic layer deposited (PEALD) 150 nm thick Al2O3 as a bottom gate dielectric and a 300 nm thick parylene or a PEALD 200 nm thick Al2O3 as both a top gate dielectric and a passivation layer. The threshold voltage (Vth) of OTFT with a 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with a PEALD 200 nm thick Al2O3 as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of Vth of OTFT with the dual-gate structure has been successfully understood by an analysis of electrostatic potential.

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