Impact of Epi-Layer Quality on Reliability of GaN/AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

2013 ◽  
Vol 60 (12) ◽  
pp. 4125-4132 ◽  
Author(s):  
Yuji Ando ◽  
Kohji Ishikura ◽  
Yasuhiro Murase ◽  
Kazunori Asano ◽  
Isao Takenaka ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Si Substrate ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Evaluation of AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate in Power Factor Correction Circuit

2007 ◽  
Vol 46 (No. 29) ◽  
pp. L721-L723 ◽  
Author(s):  
Shinichi Iwakami ◽  
Osamu Machida ◽  
Yoshimichi Izawa ◽  
Ryohei Baba ◽  
Masataka Yanagihara ◽  
...  
Keyword(s):  
Power Factor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Power Factor Correction ◽  
Si Substrate ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

2007 ◽  
Vol 46 (No. 24) ◽  
pp. L587-L589 ◽  
Author(s):  
Shinichi Iwakami ◽  
Osamu Machida ◽  
Masataka Yanagihara ◽  
Toshihiro Ehara ◽  
Nobuo Kaneko ◽  
...  
Keyword(s):  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Si Substrate ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements

2012 ◽  
Vol 9 (3-4) ◽  
pp. 911-914 ◽  
Author(s):  
Martin Mikulics ◽  
Hilde Hardtdegen ◽  
Andreas Winden ◽  
Alfred Fox ◽  
Michel Marso ◽  
...  
Keyword(s):  
Residual Strain ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure
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