Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design

2013 ◽  
Vol 60 (10) ◽  
pp. 3216-3222 ◽  
Author(s):  
Sourabh Khandelwal ◽  
Chandan Yadav ◽  
Shantanu Agnihotri ◽  
Yogesh Singh Chauhan ◽  
Arnaud Curutchet ◽  
...  
Keyword(s):  
Surface Potential ◽  
Compact Model ◽  
Ic Design ◽  
Gan Hemt

scholarly journals Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT

2021 ◽  
Vol 68 (4) ◽  
pp. 2049-2055
Author(s):  
Jingrui Guo ◽  
Ying Zhao ◽  
Guanhua Yang ◽  
Xichen Chuai ◽  
Wenhao Lu ◽  
...  
Keyword(s):  
Surface Potential ◽  
Compact Model ◽  
Dual Gate ◽  
Igzo Tft

scholarly journals A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters

Energies ◽  
2021 ◽  
Vol 14 (8) ◽  
pp. 2092
Author(s):  
Ke Li ◽  
Paul Leonard Evans ◽  
Christopher Mark Johnson ◽  
Arnaud Videt ◽  
Nadir Idir
Keyword(s):  
Power Electronics ◽  
Physical Model ◽  
Order Reduction ◽  
Power Converter ◽  
Compact Model ◽  
Voltage Source ◽  
Power Losses ◽  
Gan Hemt ◽  
Operation Conditions ◽  
Power Electronics Converters

In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic RDSon effect is proposed herein. The model includes mathematical equations to represent device static and capacitance-voltage characteristics, and a behavioural voltage source, which includes multiple RC units to represent different time constants for trapping and detrapping effect from 100 ns to 100 s range. All the required parameters in the model can be obtained by fitting method using a datasheet or experimental characterisation results. The model is then implemented into our developed virtual prototyping software, where the device compact model is co-simulated with a parasitic inductance physical model to obtain the switching waveform. As model order reduction is applied in our software to resolve physical model, the device switching current and voltage waveform can be obtained in the range of minutes. By comparison with experimental measurements, the model is validated to accurately represent device switching transients as well as their spectrum in frequency domain until 100 MHz. In terms of dynamic RDSon value, the mismatch between the model and experimental results is within 10% under different power converter operation conditions in terms of switching frequencies and duty cycles, so designers can use this model to accurately obtain GaN-HEMT power losses due to trapping and detrapping effects for power electronics converters.

scholarly journals A Review for Compact Model of Thin-Film Transistors (TFTs)

Micromachines ◽  
2018 ◽  
Vol 9 (11) ◽  
pp. 599 ◽  
Author(s):  
Nianduan Lu ◽  
Wenfeng Jiang ◽  
Quantan Wu ◽  
Di Geng ◽  
Ling Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Circuit Design ◽  
Surface Potential ◽  
Radio Frequency Identification ◽  
Thin Film Transistors ◽  
Parameter Extraction ◽  
Theoretical Description ◽  
Compact Model ◽  
Compact Models ◽  
Identification Tags

Thin-film transistors (TFTs) have grown into a huge industry due to their broad applications in display, radio-frequency identification tags (RFID), logical calculation, etc. In order to bridge the gap between the fabrication process and the circuit design, compact model plays an indispensable role in the development and application of TFTs. The purpose of this review is to provide a theoretical description of compact models of TFTs with different active layers, such as polysilicon, amorphous silicon, organic and In-Ga-Zn-O (IGZO) semiconductors. Special attention is paid to the surface-potential-based compact models of silicon-based TFTs. With the understanding of both the charge transport characteristics and the requirement of TFTs in organic and IGZO TFTs, we have proposed the surface-potential-based compact models and the parameter extraction techniques. The proposed models can provide accurate circuit-level performance prediction and RFID circuit design, and pass the Gummel symmetry test (GST). Finally; the outlook on the compact models of TFTs is briefly discussed.

Correlating Microscopic and Macroscopic Variation With Surface-Potential Compact Model

2009 ◽  
Vol 30 (8) ◽  
pp. 873-875 ◽  
Author(s):  
H.J. Mattausch ◽  
N. Sadachika ◽  
A. Yumisaki ◽  
A. Kaya ◽  
W. Imafuku ◽  
...  
Keyword(s):  
Surface Potential ◽  
Compact Model
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