Theoretical Analysis of n-Type Si-Based Resonant Tunneling Diodes Deposited on Either Partially or Fully Relaxed SiGe Buffer Layers

2013 ◽  
Vol 60 (4) ◽  
pp. 1298-1301
Author(s):  
Kuan Y. Wu ◽  
Hung H. Cheng ◽  
Kuan M. Hung ◽  
Greg Sun
Keyword(s):  
Theoretical Analysis ◽  
Resonant Tunneling ◽  
Buffer Layers ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

Sign in / Sign up

Export Citation Format

Share Document