Theoretical analysis of coupled oscillator array using resonant tunneling diodes in subterahertz and terahertz range

2008 ◽  
Vol 103 (12) ◽  
pp. 124514 ◽  
Author(s):  
M. Asada ◽  
S. Suzuki
2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.


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