Fluoride Resonant Tunneling Diodes using Lattice-Matched Buffer Layers on Si Substrates

2006 ◽  
Author(s):  
Kazuo Tsutsui ◽  
Natsuko Matsudo ◽  
Motoki Maeda ◽  
So Watanabe
Keyword(s):  
Resonant Tunneling ◽  
Buffer Layers ◽  
Resonant Tunneling Diodes ◽  
Si Substrates ◽  
Tunneling Diodes ◽  
Lattice Matched

Formation of Large Conduction Band Discontinuities of Heterointerfaces Using CdF2 AND CaF2 on Si(111)

1996 ◽  
Vol 448 ◽  
Author(s):  
Akira Izumi ◽  
Noriyuki Matsubara ◽  
Yusuke Kushida ◽  
Kazuo Tsutsui ◽  
Nikolai S. Sokolov
Keyword(s):  
Conduction Band ◽  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Room Temperature ◽  
Quantum Effect ◽  
Differential Resistance ◽  
Resonant Tunneling Diodes ◽  
Current Ratio ◽  
Si Substrates ◽  
Tunneling Diodes

AbstractWe proposed use of a new CdF2/CaF2 heterointerface for the formation of large conduction band discontinuities to apply quantum effect devices fabricated on Si substrates. Resonant tunneling diodes using this heterointerface on Si were fabricated and negative differential resistance whose P/V current ratio of 24 at highest was observed at room temperature.

Heteroepitaxy of Cd-Rich CaxCd1-xF2Alloy on Si Substrates and Its Application to Resonant Tunneling Diodes

2003 ◽  
Vol 42 (Part 1, No. 4B) ◽  
pp. 2453-2457 ◽  
Author(s):  
Motoki Maeda ◽  
Hiroshi Kambayashi ◽  
So Watanabe ◽  
Kazuo Tsutsui
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Si Substrates ◽  
Tunneling Diodes
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