First Demonstration of Hybrid CMOS Imagers With Simultaneous Very Low Crosstalk and High-Broadband Quantum Efficiency

2012 ◽  
Vol 59 (10) ◽  
pp. 2723-2726 ◽  
Author(s):  
Kyriaki Minoglou ◽  
Koen De Munck ◽  
Joeri De Vos ◽  
Deniz Sabuncuoglu Tezcan ◽  
Chris Van Hoof ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Cmos Imagers ◽  
Hybrid Cmos

Soft x-ray quantum efficiency of silicon hybrid CMOS detectors

2014 ◽  
Author(s):  
Zachary R. Prieskorn ◽  
Stephen D. Bongiorno ◽  
David N. Burrows ◽  
Abraham D. Falcone ◽  
Christopher V. Griffith ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
X Ray ◽  
Hybrid Cmos

Backside thinned CMOS imagers with high broadband quantum efficiency realised using new integration process

2008 ◽  
Vol 44 (1) ◽  
pp. 50 ◽  
Author(s):  
K. De Munck ◽  
J. Bogaerts ◽  
D.S. Tezcan ◽  
P. De Moor ◽  
S. Sedky ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Integration Process ◽  
Cmos Imagers

scholarly journals Measuring the quantum efficiency of X-ray hybrid CMOS detectors

2021 ◽  
Author(s):  
Joseph M. Colosimo ◽  
Abraham D. Falcone ◽  
Mitchell Wages ◽  
Samuel V. Hull ◽  
David N. Burrows ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
X Ray ◽  
Hybrid Cmos

Thermal lens determination of fluorescence quantum efficiency of3F4level of Tm3+ions in solids

2005 ◽  
Vol 125 ◽  
pp. 193-196 ◽  
Author(s):  
S. L. Oliveira ◽  
S. M. Lima ◽  
T. Catunda ◽  
H. Vargas ◽  
L. A.O. Nunes ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Thermal Lens

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

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