Backside thinned CMOS imagers with high broadband quantum efficiency realised using new integration process

2008 ◽  
Vol 44 (1) ◽  
pp. 50 ◽  
Author(s):  
K. De Munck ◽  
J. Bogaerts ◽  
D.S. Tezcan ◽  
P. De Moor ◽  
S. Sedky ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Integration Process ◽  
Cmos Imagers

First Demonstration of Hybrid CMOS Imagers With Simultaneous Very Low Crosstalk and High-Broadband Quantum Efficiency

2012 ◽  
Vol 59 (10) ◽  
pp. 2723-2726 ◽  
Author(s):  
Kyriaki Minoglou ◽  
Koen De Munck ◽  
Joeri De Vos ◽  
Deniz Sabuncuoglu Tezcan ◽  
Chris Van Hoof ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Cmos Imagers ◽  
Hybrid Cmos

Processing of an Integrated Optical Sensor with Almost 100% Quantum Efficiency

2015 ◽  
Vol 644 ◽  
pp. 45-48
Author(s):  
I. Jonak-Auer ◽  
S. Jessenig
Keyword(s):  
Ion Implantation ◽  
Quantum Efficiency ◽  
Base Material ◽  
Cost Effective ◽  
Cmos Process ◽  
Integration Process ◽  
Surface Protection ◽  
Order Of Magnitude ◽  
Photodiode Arrays ◽  
Dark Currents

We report on a new fabrication process of integrated PIN photodetectors with very high quantum efficiencies into a 0.35μm CMOS process, including improved processing for bottom antireflective coating (BARC). The integration process is such that complete modularity of the CMOS process remains untouched by the implementation of the highly efficient photodetectors. Due to the fact that only two additional masks and one ion implantation step are necessary for the implementation of PIN photodetectors including BARC, this integration process also proves to be very cost effective. In-house processed p-doped intrinsic layers with EPI doping levels as low as 1∙1012/cm3 serve as CMOS base material. This is a doping level that major semiconductor vendors could not provide. With just one additional mask and ion implantation we provide doping concentrations very similar to standard CMOS substrates to areas outside the photoactive regions. Thus full functionality of the standard CMOS logic can be guaranteed while the photodetectors highly benefit from the low doping concentrations of the intrinsic EPI. Special surface protection techniques are performed to maintain the low doping concentrations of the substrate during the complete CMOS processing. To further enhance the photosensor’s quantum efficiency especially of photodetector arrays we present a new BARC process. With this new BARC process we can lower the dark current in photodiode arrays by at least one order of magnitude compared to currently established plasma-etch methods. The following photodiode parameters could be accomplished for 100x100μm2 single photodiodes with BARC: quantum efficiencies of 76%, 99.8% and 74% at wavelengths of 500nm, 675nm and 850nm, respectively, capacitances of 0.13pF and dark currents of 1.18pA for unbiased photodiodes.

High performance Hybrid and Monolithic Backside Thinned CMOS Imagers realized using a new integration process

2006 ◽  
Author(s):  
Koen De Munck ◽  
Deniz Sabuncuoglu Tezcan ◽  
Tom Borgers ◽  
Wouter Ruythooren ◽  
Piet De Moor ◽  
...  
Keyword(s):  
High Performance ◽  
Integration Process ◽  
Cmos Imagers

Thermal lens determination of fluorescence quantum efficiency of3F4level of Tm3+ions in solids

2005 ◽  
Vol 125 ◽  
pp. 193-196 ◽  
Author(s):  
S. L. Oliveira ◽  
S. M. Lima ◽  
T. Catunda ◽  
H. Vargas ◽  
L. A.O. Nunes ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Thermal Lens

China und Lateinamerika

2006 ◽  
Vol 36 (142) ◽  
pp. 113-126
Author(s):  
Enrique Dussel Peters
Keyword(s):  
Latin America ◽  
World Market ◽  
Global Integration ◽  
Integration Process ◽  
Medium Term ◽  
The World ◽  
New Challenges

China's socioeconomic accumulation in the last 30 years has been probably one of the most outstanding global developments and has resulted in massive new challenges for core and periphery countries. The article examines how China's rapid and massive integration to the world market has posed new challenges for countries such as Mexico - and most of Latin America - as a result of China's successful exportoriented industrialization. China's accumulation and global integration process does, however, not only question and challenges the export-possibilities in the periphery, but also the global inability to provide energy in the medium term.

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

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