Deterministic Method to Evaluate the Threshold Voltage Variability Induced by Discrete Trap Charges in Si-Nanowire FETs

2012 ◽  
Vol 59 (5) ◽  
pp. 1462-1467 ◽  
Author(s):  
Abderrezak Bekaddour ◽  
Marco G. Pala ◽  
Nasr-Eddine Chabane-Sari ◽  
Gérard Ghibaudo
Keyword(s):  
Threshold Voltage ◽  
Deterministic Method ◽  
Si Nanowire ◽  
Trap Charges

Threshold-Voltage Fluctuation of Double-Gated Poly-Si Nanowire Field-Effect Transistor

2009 ◽  
Vol 30 (3) ◽  
pp. 243-245 ◽  
Author(s):  
Hsing-Hui Hsu ◽  
Horng-Chih Lin ◽  
Leng Chan ◽  
Tiao-Yuan Huang
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Voltage Fluctuation ◽  
Si Nanowire ◽  
Effect Transistor

An Analytical Model for the Threshold Voltage of Intrinsic Channel MOSFET Having Bulk Trap Charges

2017 ◽  
Vol 64 (5) ◽  
pp. 2113-2120 ◽  
Author(s):  
Hyunwoo Jo ◽  
Seongwook Choi ◽  
Sungman Rhee ◽  
Young June Park
Keyword(s):  
Analytical Model ◽  
Threshold Voltage ◽  
Trap Charges

High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage

Nanoscale ◽  
2014 ◽  
Vol 6 (10) ◽  
pp. 5479 ◽  
Author(s):  
Ngoc Huynh Van ◽  
Jae-Hyun Lee ◽  
Jung Inn Sohn ◽  
Seung Nam Cha ◽  
Dongmok Whang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Cmos Inverter ◽  
Si Nanowire

Improvement in Computational Accuracy of Output Transition Time Variation Considering Threshold Voltage Variations

2009 ◽  
Vol E92-A (4) ◽  
pp. 990-997
Author(s):  
Takaaki OKUMURA ◽  
Atsushi KUROKAWA ◽  
Hiroo MASUDA ◽  
Toshiki KANAMOTO ◽  
Masanori HASHIMOTO ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Time Variation ◽  
Transition Time ◽  
Computational Accuracy
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