Improvement in Computational Accuracy of Output Transition Time Variation Considering Threshold Voltage Variations

2009 ◽  
Vol E92-A (4) ◽  
pp. 990-997
Author(s):  
Takaaki OKUMURA ◽  
Atsushi KUROKAWA ◽  
Hiroo MASUDA ◽  
Toshiki KANAMOTO ◽  
Masanori HASHIMOTO ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Time Variation ◽  
Transition Time ◽  
Computational Accuracy

Transisi Kepemimpinan Dalam Alkitab

2016 ◽  
Vol 1 (1) ◽  
pp. 16-38
Author(s):  
Jonathan Octavianus
Keyword(s):  
New Testament ◽  
Old Testament ◽  
Jesus Christ ◽  
Transition Time ◽  
People Of God ◽  
The Absolute

As every epoch there are there a transition time, on Old Testament like Moses with Joshua, Joshua selected by God an supported fully by Moses, Conversely Moses have liberally to be changed. Like Elijah to Elisha too.Pattern on New Testament there are an examples of transition time too, like Jesus Christ to His Disciples, an transition from Paul to his successor Timothy. This is a heart and soul a big leader, and shall all leadership owners shepherd in church, Christian institution, etc.Which most be remembered in transition of leadership, that people of God leadership, about who will lead, who continue leadership, like a principle in biblical, hence a role of God, is determinant an anoint man which be selected the absolute God choice and constitute all other, but a succession router leader is which have been selected His own. An can be anointed in front of believers.

Analysis Approach on DMOS Transistor Vth Mismatch Due to Trapped Charges

2015 ◽  
Author(s):  
Hashim Ismail ◽  
Ang Chung Keow ◽  
Kenny Gan Chye Siong
Keyword(s):  
Failure Analysis ◽  
Threshold Voltage ◽  
Gate Oxide ◽  
Analysis Approach ◽  
Test Results ◽  
Root Cause ◽  
Switching Event ◽  
Output Transistor ◽  
Event Based ◽  
Trapped Charge

Abstract An output switching malfunction was reported on a bridge driver IC. The electrical verification testing revealed evidence of an earlier over current condition resulting from an abnormal voltage sense during a switching event. Based on these test results, we developed the hypothesis that a threshold voltage mismatch existed between the sense transistor and the output transistor. This paper describes the failure analysis approach we used to characterize the threshold voltage mismatch as well as our approach to determine the root cause, which was trapped charge on the gate oxide of the sense transistor.

Analysis of an Anomalous CMOS Transistor Exhibiting Drain to Source Leakage—Its Model and Cause

2014 ◽  
Author(s):  
Yuk L. Tsang ◽  
Alex VanVianen ◽  
Xiang D. Wang ◽  
N. David Theodore
Keyword(s):  
Threshold Voltage ◽  
Crystalline Silicon ◽  
Electrical Characterization ◽  
Visual Defect ◽  
Scanning Capacitance Microscopy ◽  
Device Model ◽  
Graphical Simulation ◽  
Cmos Transistor

Abstract In this paper, we report a device model that has successfully described the characteristics of an anomalous CMOS NFET and led to the identification of a non-visual defect. The model was based on detailed electrical characterization of a transistor exhibiting a threshold voltage (Vt) of about 120mv lower than normal and also exhibiting source to drain leakage. Using a simple graphical simulation, we predicted that the anomalous device was a transistor in parallel with a resistor. It was proposed that the resistor was due to a counter doping defect. This was confirmed using Scanning Capacitance Microscopy (SCM). The dopant defect was shown by TEM imaging to be caused by a crystalline silicon dislocation.

Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90nm Node CMOS Technology

2012 ◽  
Author(s):  
Yuk L. Tsang ◽  
Xiang D. Wang ◽  
Reyhan Ricklefs ◽  
Jason Goertz
Keyword(s):  
Threshold Voltage ◽  
Electrical Characterization ◽  
Cmos Technology ◽  
Short Channel ◽  
Visual Defect ◽  
Subthreshold Region ◽  
Short Channel Effect ◽  
Channel Effect ◽  
Transistor Model

Abstract In this paper, we report a transistor model that has successfully led to the identification of a non visual defect. This model was based on detailed electrical characterization of a MOS NFET exhibiting a threshold voltage (Vt) of just about 40mv lower than normal. This small Vt delta was based on standard graphical extrapolation method in the usual linear Id-Vg plots. We observed, using a semilog plot, two slopes in the Id-Vg curves with Vt delta magnified significantly in the subthreshold region. The two slopes were attributed to two transistors in parallel with different Vts. We further found that one of the parallel transistors had short channel effect due to a punch-through mechanism. It was proposed and ultimately confirmed the cause was due to a dopant defect using scanning capacitance microscopy (SCM) technique.

A striped pattern of snowfall and snow cover

1993 ◽  
Vol 18 ◽  
pp. 27-32
Author(s):  
Yasuaki Nohguchi ◽  
Takashi Ikarashi ◽  
Osamu Abe ◽  
Atsushi Sato
Keyword(s):  
Snow Cover ◽  
Atmospheric Turbulence ◽  
Layered Structure ◽  
Time Variation ◽  
Vertical Wall ◽  
Striped Pattern

A striped pattern can be seen by spraying ink on a vertical wall of a snow pit to observe the layered structure of a snow cover. This pattern is caused by variations of snowfall in time, particularly pauses in snowfall, and its structure is related to a kind of fractal. In this paper, we consider snowfall and snow cover from a viewpoint of fractals and show that the layered structure of snow cover is a record of fractals on atmospheric-turbulence phenomena through the time variation of snowfall.

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