Effect of Heat Diffusion During State Transitions in Resistive Switching Memory Device Based on Nickel-Rich Nickel Oxide Film

2012 ◽  
Vol 59 (5) ◽  
pp. 1558-1562 ◽  
Author(s):  
S. G. Hu ◽  
Yang Liu ◽  
T. P. Chen ◽  
Zhen Liu ◽  
Ming Yang ◽  
...  
Keyword(s):  
Oxide Film ◽  
Nickel Oxide ◽  
Resistive Switching ◽  
Memory Device ◽  
Heat Diffusion ◽  
State Transitions ◽  
Resistive Switching Memory ◽  
Nickel Oxide Film ◽  
Switching Memory

Flexible nonvolatile resistive memory devices based on SrTiO3 nanosheets and polyvinylpyrrolidone composites

2017 ◽  
Vol 5 (37) ◽  
pp. 9799-9805 ◽  
Author(s):  
Guilin Chen ◽  
Peng Zhang ◽  
Lulu Pan ◽  
Lin Qi ◽  
Fucheng Yu ◽  
...  
Keyword(s):  
Memory Effect ◽  
Resistive Switching ◽  
Memory Device ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Memory ◽  
Switching Memory

A non-volatile resistive switching memory effect was observed in flexible memory device based on SrTiO3 nanosheets and polyvinylpyrrolidone composites.

Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory device

2015 ◽  
Vol 54 (2) ◽  
pp. 021802 ◽  
Author(s):  
Lifeng Liu ◽  
Di Yu ◽  
Wenjia Ma ◽  
Bing Chen ◽  
Feifei Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Resistive Switching Memory ◽  
Switching Memory
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