Characteristic Evolution From Rectifier Schottky Diode to Resistive-Switching Memory With Al-Doped Zinc Tin Oxide Film

2014 ◽  
Vol 61 (4) ◽  
pp. 1071-1076 ◽  
Author(s):  
Yang-Shun Fan ◽  
Po-Tsun Liu
Keyword(s):  
Oxide Film ◽  
Resistive Switching ◽  
Schottky Diode ◽  
Tin Oxide ◽  
Resistive Switching Memory ◽  
Zinc Tin Oxide ◽  
Characteristic Evolution ◽  
Switching Memory

Resistive Switching Memory based on Silver-doped Chitosan Thin Films

MRS Advances ◽  
2018 ◽  
Vol 3 (33) ◽  
pp. 1943-1948 ◽  
Author(s):  
C. Strobel ◽  
T. Sandner ◽  
S. Strehle
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tin Oxide ◽  
Bottom Electrode ◽  
Low Cost ◽  
Memory Devices ◽  
Neuromorphic Computing ◽  
Resistive Switching Memory ◽  
Switching Behaviour ◽  
Switching Memory

AbstractMemristors represent an intriguing two-terminal device strategy potentially able to replace conventional memory devices as well as to support neuromorphic computing architectures. Here, we present the resistive switching behaviour of the sustainable and low-cost biopolymer chitosan, which can be extracted from natural chitin present for instance in crab exoskeletons. The biopolymer films were doped with Ag ions in varying concentrations and sandwiched between a bottom electrode such as fluorinated-tin-oxide and a silver top electrode. Silver-doped devices showed an overall promising resistive switching behaviour for doping concentrations between 0.5 to 1 wt% AgNO3. As bottom electrode fluorinated-tin-oxide, nickel, silver and titanium were studied and multiple write and erase cycles were recorded. However, the overall reproducibility and stability are still insufficient to support broader applicability.

Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory

2017 ◽  
Vol 5 (25) ◽  
pp. 6319-6327 ◽  
Author(s):  
Teng-Yu Su ◽  
Chi-Hsin Huang ◽  
Yu-Chuan Shih ◽  
Tsang-Hsuan Wang ◽  
Henry Medina ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Schottky Diode ◽  
Defect Engineering ◽  
Resistive Switching Memory ◽  
Switching Memory

The role of defect engineering is essential in resistive switching memory.

Ternary Resistive Switching Memory Behavior in Graphene Oxide Layer

NANO ◽  
2018 ◽  
Vol 13 (07) ◽  
pp. 1850072 ◽  
Author(s):  
Junguo Lu ◽  
Yanmei Sun ◽  
Dianzhong Wen
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Applied Voltage ◽  
Thermionic Emission ◽  
Voltage Range ◽  
Resistive Switching Memory ◽  
Resistance State ◽  
Switching Memory

We report the application of graphene oxide (GO) as the active layer of memory devices. The indium-tin-oxide/GO/Al devices present the ternary write-once-read-many times resistive switching memory, and retain the data information for [Formula: see text][Formula: see text]s. In the OFF states, the [Formula: see text]–[Formula: see text] characteristics in the applied voltage dominantly followed the space-charge-limited-current behaviors. The intermediate resistance state was attributed to the thermionic emission mechanism. In the ON state, the curve in the applied voltage range was related to an Ohmic mechanism.

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