Mechanism of Trapping Effect in Heterojunction With Intrinsic Thin-Layer Solar Cells: Effect of Density of Defect States

2012 ◽  
Vol 59 (5) ◽  
pp. 1227-1235 ◽  
Author(s):  
X. Hua ◽  
Z. P. Li ◽  
W. Z. Shen ◽  
G. Y. Xiong ◽  
X. S. Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Thin Layer ◽  
Defect States ◽  
Trapping Effect ◽  
Density Of Defect States

Improvement in the Transport of Charge Carriers in Tunnel Junctions of Silicon-Based Thin Film Tandem Solar Cells

2012 ◽  
Vol 159 ◽  
pp. 137-140
Author(s):  
Ming Ji Shi ◽  
Xin Feng Guo ◽  
Sheng Zhao Wang ◽  
Lan Li Chen
Keyword(s):  
Activation Energy ◽  
Solar Cells ◽  
Tunnel Junction ◽  
Deposition Process ◽  
Defect States ◽  
Recombination Rates ◽  
Tandem Solar Cells ◽  
Current Voltage ◽  
Density Of Defect States ◽  
Silicon Based

We report new results on a tunneling junction for tandem solar cells using a nano-structured amorphous silicon p+layer (na-Si p+) as the recombination layer inserted between the n layer and the p layer. Devices were characterized by their dark current-voltage behavior (I-V), activation energy (Ea) and quantum efficiency (QE). The result shows that the tunnel junction with a na-Si p+insertion layer has higher recombination rates with higher density of defect states of about 2.7×1019cm-3, lower resistance with activation energy of 22meV. The tunnel junction with a na-Si p+insertion layer could be easily integrated into the tandem solar cell deposition process.

Oxygen-Induced Defect-Healing and Photo-Brightening of Halide Perovskite Semiconductors: Science and Application

2021 ◽  
Author(s):  
Like Huang ◽  
Ziyi Ge ◽  
Xiaoli Zhang ◽  
Yuejin Zhu
Keyword(s):  
Solar Cells ◽  
Quantum Yield ◽  
Optoelectronic Device ◽  
Defect States ◽  
Defect Healing ◽  
Photoluminescence Quantum Yield ◽  
Metal Halide Perovskite ◽  
Device Applications ◽  
Halide Perovskite ◽  
Density Of Defect States

Solution-processed metal halide perovskite (MHP) semiconductors, have exhibited remarkable success in diverse optoelectronic device applications, especially in solar cells, despite having non-negligible density of defect states. The photoluminescence quantum yield...

Internal Electric Field Profile of A-Si:H And A-Sige:H Solar Cells

1998 ◽  
Vol 507 ◽  
Author(s):  
Xinhua Geng ◽  
Lei Wu ◽  
Kent Price ◽  
Xunming Deng ◽  
Qi Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Field Strength ◽  
Electric Field ◽  
Current Method ◽  
Internal Electric Field ◽  
Field Profile ◽  
Defect States ◽  
Screening Length ◽  
Electric Field Profile ◽  
Density Of Defect States

ABSTRACTBy using the transient-null-current method, we have measured the internal electric field profiles Ei(x) near the p/i interface for two groups of solar cells: (a) a-Si:H p-i-n solar cells with varied i-layer thicknesses, and (b) a-SiGe:H cells with varied Ge content. When using an exponential function of Ei(x) to fit the experimental results, we obtained the field strength at the p/i interface E0, the screening length Lo, and the density of defect states Nd in the i-layer. The thinner the i-layer, the stronger the field strength obtained. For i-layer thickness increasing from 0.1 to 0.5 μm, the field strength E0 decreases from 1.15×105 to 2.0×104 V/cm; Lo decreases from 0.89 to 0.14 μm; and Nd is 3-4×1016 (cm3eV)−1. For the a-SiGe:H cells, as the Ge content increases from 40 to 55 %, E0 increases from 9.3×104 to 1.2×105 V/cm. The correlation of the internal electric field parameters with the cell‘s performance is discussed.

Good Quality N (a-Si)-P+(Na-Si)-P (μC-Si) Tunnel Junction for Tandem Solar Cells

2011 ◽  
Vol 181-182 ◽  
pp. 336-339
Author(s):  
Lan Li Chen ◽  
Ming Ji Shi ◽  
Jia Hui Yu
Keyword(s):  
Activation Energy ◽  
Solar Cells ◽  
Tunnel Junction ◽  
Deposition Process ◽  
Defect States ◽  
Recombination Rates ◽  
Tandem Solar Cells ◽  
Current Voltage ◽  
Density Of Defect States ◽  
Recombination Junction

A new tunnel-recombination junction model was proposed to increase the recombination of n/p junctions in tandem solar cells. According to the model, we fabricated a new tunnel junction with a nanostructured amorphous silicon p+(na-Si p+) layer inserted between the n layer and the p layer. To compare with the conventional method, we fabricated another tunnel junction with an amorphous p+(a-Si p+) insertion layer. Both devices were characterized by their dark current-voltage behavior (I-V), activation energy (Ea) and quantum efficiency (QE). The result shows that the tunnel junction with a na-Si p+insertion layer has higher recombination rates with higher density of defect states of about 2.7×1019cm-3, lower resistance with activation energy of 22meV. The tunnel junction with a na-Si p+insertion layer could be easily integrated into the tandem solar cell deposition process.

Halide Engineering for Mitigating Ion Migration and Defect States in Hot-Cast Perovskite Solar Cells

2021 ◽  
Author(s):  
Ritesh Kant Gupta ◽  
Rabindranath Garai ◽  
Maimur Hossain ◽  
Anwesha Choudhury ◽  
Parameswar Krishnan Iyer
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Defect States ◽  
Ion Migration

Solar-to-Hydrogen Efficiency of 9.5 % by using a Thin-Layer Platinum Catalyst and Commercial Amorphous Silicon Solar Cells

ChemCatChem ◽  
2016 ◽  
Vol 8 (9) ◽  
pp. 1713-1717 ◽  
Author(s):  
Qiang Ma ◽  
Man Li ◽  
Liuqing Pang ◽  
Xianpei Ren ◽  
Can Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Thin Layer ◽  
Amorphous Silicon ◽  
Platinum Catalyst ◽  
Silicon Solar Cells

scholarly journals A noise model for the evaluation of defect states in solar cells

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
G. Landi ◽  
C. Barone ◽  
C. Mauro ◽  
H. C. Neitzert ◽  
S. Pagano
Keyword(s):  
Solar Cells ◽  
Noise Model ◽  
Defect States

Conventional polymer solar cells with power conversion efficiencies increased to >9% by a combination of methanol treatment and an anionic conjugated polyelectrolyte interface layer

RSC Advances ◽  
2014 ◽  
Vol 4 (92) ◽  
pp. 50988-50992 ◽  
Author(s):  
Tao Yuan ◽  
Dong Yang ◽  
Xiaoguang Zhu ◽  
Lingyu Zhou ◽  
Jian Zhang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Thin Layer ◽  
Polymer Solar Cell ◽  
Polymer Solar Cells ◽  
Power Conversion ◽  
Interface Layer ◽  
Conjugated Polyelectrolyte ◽  
Methanol Treatment ◽  
Conversion Efficiencies

The power conversion efficiency of a PTB7:PC71BM polymer solar cell was improved up to 9.1% by a combination of methanol treatment followed by conjugation of a water- or alcohol-soluble polyelectrolyte thin layer.

Defect states in the intrinsic layer of amorphous silicon solar cells studied by the constant-photocurrent method

1998 ◽  
Vol 77 (4) ◽  
pp. 1049-1061 ◽  
Author(s):  
Petr Sládek ◽  
Pavel Sťahel ◽  
Pere Roca I. Cabarrocas ◽  
Philippe Morin
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Defect States
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