scholarly journals A noise model for the evaluation of defect states in solar cells

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
G. Landi ◽  
C. Barone ◽  
C. Mauro ◽  
H. C. Neitzert ◽  
S. Pagano
Keyword(s):  
Solar Cells ◽  
Noise Model ◽  
Defect States

Halide Engineering for Mitigating Ion Migration and Defect States in Hot-Cast Perovskite Solar Cells

2021 ◽  
Author(s):  
Ritesh Kant Gupta ◽  
Rabindranath Garai ◽  
Maimur Hossain ◽  
Anwesha Choudhury ◽  
Parameswar Krishnan Iyer
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Defect States ◽  
Ion Migration

Defect states in the intrinsic layer of amorphous silicon solar cells studied by the constant-photocurrent method

1998 ◽  
Vol 77 (4) ◽  
pp. 1049-1061 ◽  
Author(s):  
Petr Sládek ◽  
Pavel Sťahel ◽  
Pere Roca I. Cabarrocas ◽  
Philippe Morin
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Defect States

Defect Spectroscopy on Damp-Heat Treated ZnO/CdS/Cu(In,Ga)(S,Se)2/Mo Heterojunction Solar Cells

2003 ◽  
Vol 58 (12) ◽  
pp. 691-702 ◽  
Author(s):  
C. Deibel ◽  
V. Dyakonov ◽  
J. Parisi
Keyword(s):  
Heat Treatment ◽  
Activation Energy ◽  
Solar Cells ◽  
Deep Level ◽  
Heat Exposure ◽  
Continuous Distribution ◽  
Open Circuit ◽  
Defect States ◽  
Band Bending ◽  
Test Cells

The changes of defect characteristics induced by accelerated lifetime tests on solar cells of the heterostructure ZnO/CdS/Cu(In,Ga)(S,Se)2/Mo are investigated. Encapsulated modules were shown to be stable against water vapor and oxygen under outdoor conditions, whereas the fill factor and open-circuit voltage of non-encapsulated test cells are reduced after prolonged damp heat treatment in the laboratory, leading to a reduced energy conversion efficiency. We subjected non-encapsulated test cells to extended damp heat exposure at 85 ◦C ambient temperature and 85% relative humidity for various time periods (6 h, 24 h, 144 h, 294 h, and 438 h). In order to understand the origin of the pronounced changes of the cells, we applied temperature-dependent current-voltage and capacitance voltage measurements, admittance spectroscopy, and deep-level transient spectroscopy. We observed the presence of electronic defect states which show an increasing activation energy due to damp heat exposure. The corresponding attempt-to-escape frequency and activation energy of these defect states obey the Meyer-Neldel relation. We conclude that the response originates from an energetically continuous distribution of defect states in the vicinity of the CdS/chalcopyrite interface. The increase in activation energy indicates a reduced band bending at the Cu(In,Ga)(S,Se)2 surface.We also observed changes in the bulk defect spectra due to the damp-heat treatment. - PACS: 73.20.hb, 73.61.Le

Effect of TiO2 surface treatment on electron transfer in dye-sensitized solar cells

2022 ◽  
Author(s):  
Suping Jia ◽  
Tong Cheng ◽  
Huinian Zhang ◽  
Hao Wang ◽  
Caihong Hao
Keyword(s):  
Solar Cells ◽  
Electron Transport ◽  
High Efficiency ◽  
Surface Defects ◽  
Dye Sensitized Solar Cells ◽  
Charge Recombination ◽  
Defect States ◽  
Transport Pathway ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

Defect states in the TiO2 nanoparticles can cause severe charge recombination and poor electron-transport efficiency when used as a photoanode in dye-sensitized solar cells (DSSCs). Herein, we report a simple and practical way to passivate the surface defects of TiO2 through hydrothermal treating with acetic acid and H2SO4, introducing a high percentage of 101 facets and sulfonic acid functional groups on the TiO2 surface. A high efficiency of 8.12% has been achieved, which is 14% higher than that of untreated TiO2 under the same condition. EIS results prove that the multiacid-treated TiO2 can promote electron transport and reduce charge recombination at the interface of the TiO2 and electrolyte. This work provides an efficient approach to engineer the electron-transport pathway in DSSCs.

Electronic Defects and Device Performance in CuGaSe2 Solar Cells

2007 ◽  
Vol 1012 ◽  
Author(s):  
J. Jedediah Rembold ◽  
Todd W. Curtis ◽  
Jennifer T. Heath ◽  
David L. Young ◽  
Steve W. Johnston ◽  
...  
Keyword(s):  
Solar Cells ◽  
Defect Density ◽  
Wide Bandgap ◽  
Device Performance ◽  
Defect States ◽  
Materials Properties ◽  
Interface Recombination ◽  
Interface Defect ◽  
Limited Supply ◽  
Electronic Defects

AbstractThe electronic and materials properties of two series of wide-bandgap solar cells with Cu-poor CuGaSe2 (CGS) absorbers have been studied, to better understand limitations on the device performance. One series of samples displayed distinct lateral non-uniformities in Cu/Ga ratio, Na content, and thickness, likely due to a limited supply of Se during CGS growth. The second series of samples appeared uniform. The most prominent electronic difference was the presence of a distinct band of near-interface defect states in the more non-uniform set of samples. The device performance did not appear to be limited by defects in the bulk CGS film until the defect density was larger than 2×1016 cm-3. Instead, interface recombination appears to be a significant factor limiting Voc in both sets of samples.

Effect of the Hetero-Interface on the Photoresponse of A-Si/C-Si Solar Cells

1994 ◽  
Vol 358 ◽  
Author(s):  
B. Jagannathan ◽  
J. Yi ◽  
R. Wallace ◽  
W. A. Anderson
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Spectral Response ◽  
Forward Bias ◽  
Depletion Region ◽  
Defect States ◽  
Heterojunction Solar Cells ◽  
Si Solar Cells ◽  
Wavelength Absorption ◽  
P Type

ABSTRACTHeterojunction solar cells were fabricated by glow discharge deposition of amorphous silicon on p-type crystalline silicon resulting in a n/i/p structure. Dark I-V-T data on the devices show that the conduction in the forward bias regime (<0.4 volts) for better devices agrees with a multi-tunnelling-capture-emission process. The photoresponse was evaluated (under 100 mW/cm2) for various a-Si thicknesses and substrate resistivities. Spectral response tests showed an increased low wavelength absorption as the a-Si thickness was decreased. The blue response of the devices have better fill-factors than the red response indicating defects at the interface. Further, I-V-T and C-V measurements also corroborate the presence of defect states which seem to prevent the spread of the depletion region in crystalline silicon. The photoresponse was found to be very sensitive to the interface defects and the fill-factors ranged from 0.42, for the sample in which the depletion region had spread, to 0.1 in those where the depletion region had been reduced in thickness by the interface states.

The Nature of Native and Light Induced Defect States in i-layers of High Quality a-Si:H Solar Cells Derived from Dark Forward-Bias Current-Voltage Characteristics

2005 ◽  
Vol 862 ◽  
Author(s):  
J. Deng ◽  
M. L. Albert ◽  
J. M. Pearce ◽  
R. W. Collins ◽  
C. R. Wronski
Keyword(s):  
Solar Cells ◽  
Forward Bias ◽  
Bias Current ◽  
Defect State ◽  
Defect States ◽  
High Quality ◽  
Hydrogen Dilution ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Gap States

AbstractResults are presented on the defect state distributions in intrinsic a-Si:H layers with and without hydrogen dilution in p-i-n solar cells obtained directly from the analysis of dark forwardbias current-voltage (JD-V) characteristics. It is shown that there are distinct differences in the distributions of both native and light induced defect states between the two types of i-layers. Computer simulations using these distributions are presented which show excellent agreement with the experimental results not only for the JD-V but more importantly for the bias dependent differential diode quality factor n(V) characteristics. Results are also presented on the nature of the gap states and their evolution with light induced degradation as well as their effects on the performance and stability of high quality a-Si:H solar cells.

scholarly journals Current state and perspectives for organo-halide perovskite solar cells: Crystal structures and thin film formation, morphology, processing, degradation, stability improvement by carbon nanotube

2017 ◽  
Vol 20 (3) ◽  
pp. 153-193
Author(s):  
N. Ashurov ◽  
B. L. Oksengendler ◽  
S. E. Maksimov ◽  
S. Rashiodva ◽  
A. R. Ishteev ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Carbon Nanostructures ◽  
High Efficiency ◽  
Film Formation ◽  
Perovskite Solar Cells ◽  
Dip Coating ◽  
Film Structure ◽  
Defect States ◽  
Current State

The fundamental problems of the modern state of the studies of organic-inorganic organo-halide perovskites (OHP) as basis for high efficiency thin film solar cells are discussed. Perovskite varieties and background properties are introduced. The chronology of development of the studies in this direction has been presented — structural aspects of these OHP perovskites, from early 2D to recent 3D MAPbI3 perovskites and important technological aspects of smooth thin film structure creation by various techniques, such as solvent engineering, spin- and dip-coating, vacuum deposition, cation exchange approach, nanoimprinting (particularly, a many-sided role of polymers). The most important theoretical problems such as electronic structure of lattice, impurity and defect states in pure and mixed perovskites, suppressed electron-hole recombination, extra-long lifetimes, and diffusion lengths are analyzed. Degradation effects associated with moisture and photo irradiation, as well as degradation of metallic electrodes to OHP solar cells have been considered. The application of carbon nanostructures: carbon nanotubes (CNT) and graphene as stable semitransparent charge collectors to OHP perovskites is demonstrated on the example of original results of authors.

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