Internal Electric Field Profile of A-Si:H And A-Sige:H Solar Cells

1998 ◽  
Vol 507 ◽  
Author(s):  
Xinhua Geng ◽  
Lei Wu ◽  
Kent Price ◽  
Xunming Deng ◽  
Qi Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Field Strength ◽  
Electric Field ◽  
Current Method ◽  
Internal Electric Field ◽  
Field Profile ◽  
Defect States ◽  
Screening Length ◽  
Electric Field Profile ◽  
Density Of Defect States

ABSTRACTBy using the transient-null-current method, we have measured the internal electric field profiles Ei(x) near the p/i interface for two groups of solar cells: (a) a-Si:H p-i-n solar cells with varied i-layer thicknesses, and (b) a-SiGe:H cells with varied Ge content. When using an exponential function of Ei(x) to fit the experimental results, we obtained the field strength at the p/i interface E0, the screening length Lo, and the density of defect states Nd in the i-layer. The thinner the i-layer, the stronger the field strength obtained. For i-layer thickness increasing from 0.1 to 0.5 μm, the field strength E0 decreases from 1.15×105 to 2.0×104 V/cm; Lo decreases from 0.89 to 0.14 μm; and Nd is 3-4×1016 (cm3eV)−1. For the a-SiGe:H cells, as the Ge content increases from 40 to 55 %, E0 increases from 9.3×104 to 1.2×105 V/cm. The correlation of the internal electric field parameters with the cell‘s performance is discussed.

Internal Electric Field Profile in Thin Film Hydrogenated Amorphous Silicon Diodes Studied by the Transient-Null-Current Method

1997 ◽  
Vol 467 ◽  
Author(s):  
Daxing Han ◽  
Chenan Yeh ◽  
Keda Wang ◽  
Qiwang
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Space Charge ◽  
Forward Bias ◽  
Current Method ◽  
Internal Field ◽  
Total Charge ◽  
Internal Electric Field ◽  
Field Profile ◽  
Electric Field Profile

ABSTRACTWe demonstrate that the internal field of a thin a-Si:H pin solar cells can be measured using the transient-null-current method. This method was previously developed to measure the internal field profile in a-Si alloy Schottky barrier. The internal electric field profile was determined by measuring the forward-bias voltages that tune the transient photocurrents generated by a pulsed laser at a various wavelengths to zero. We adopt the same technique to a-Si:H p-i-n solar cells. In the case of p-i-n structure, we need to consider both space charge contributed by photogenerated carriers and carrier recombination which disturb the internal field. We use two critical conditions to minimize these effects. (1) To limit the contribution of photocarriers to space-charge distribution, the total charge collected is less than 10−10 C per pulse, and a repetition rate 1 Hz is used to ensure that the diode remains close to its equilibrium state. (2) The measuring time window is about 1 – 6 μs following the displacement current. Typically the RC constant of diode is < 1 μs and the rise time of the forward-bias recombination current is 6.0 × μs. We apply the signal average to process the forward-bias voltage. The error is within ± 0.05 V. With this technique we can study the effect of variety of structure design or processing on the device performance.

Transport parameters and electric field profile in amorphous silicon solar cells

1991 ◽  
Vol 23 (2-4) ◽  
pp. 273-281
Author(s):  
R. Könenkamp ◽  
S. Muramatsu ◽  
H. Itoh ◽  
S. Matsubara ◽  
T. Shimada
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Field Profile ◽  
Transport Parameters ◽  
Electric Field Profile

3D electric field analysis of needleless electrospinning from a ring coil

2013 ◽  
Vol 44 (3) ◽  
pp. 463-476 ◽  
Author(s):  
Xin Wang ◽  
Xungai Wang ◽  
Tong Lin
Keyword(s):  
Field Strength ◽  
Electric Field ◽  
Electric Field Strength ◽  
Strong Electric Field ◽  
Field Analysis ◽  
Field Profile ◽  
Element Analysis ◽  
Needleless Electrospinning ◽  
Electric Field Analysis ◽  
Electric Field Profile

Concentrated electric field is crucial in generation of needleless electrospinning, the electric field profile together with electric field strength of the spinneret affect the needleless electrospinning performance directly. Understanding the electric field of spinneret would definitely benefit the designing and optimization of needleless electrospinning. Based on the software COMSOL Multiphysics 3.5a, 3D finite element analysis has been used to analyze the electric field profile and electric field strength of a ring spinneret for needleless electrospinning. The electric field profile shows that strong electric field concentrates on the top of the ring with intensity higher than 70 kV/cm. The electric field of ring spinneret is greatly affected by the geometry of the ring and other experimental parameters such as applied voltage and collecting distance. The electric field analysis introduced in this study will be helpful in selecting proper spinneret and scaling up the production rate of nanofibers in needleless electrospinning.

Electric Field Profile and Charge Collection in a-Si:H Solar Cells

1991 ◽  
pp. 173-176
Author(s):  
R. Könenkamp ◽  
S. Muramatsu ◽  
H. Itoh ◽  
S. Matsubara ◽  
T. Shimada
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Charge Collection ◽  
Field Profile ◽  
Electric Field Profile

Electric-field profile and current control of a long epitaxial GaAs n layer

1972 ◽  
Vol 8 (4) ◽  
pp. 93 ◽  
Author(s):  
G.A. Swartz ◽  
A. Gonzalez ◽  
A. Dreeben
Keyword(s):  
Electric Field ◽  
Current Control ◽  
Field Profile ◽  
Epitaxial Gaas ◽  
Electric Field Profile

Effect of the double grading on the internal electric field and on the carrier collection in CIGS solar cells

2021 ◽  
Vol 223 ◽  
pp. 110948
Author(s):  
Alban Lafuente-Sampietro ◽  
Katsuhisa Yoshida ◽  
Shenghao Wang ◽  
Shogo Ishizuka ◽  
Hajime Shibata ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electric Field ◽  
Internal Electric Field ◽  
Carrier Collection ◽  
Cigs Solar Cells

scholarly journals Electric potential differences across auroral generator interfaces

2013 ◽  
Vol 31 (2) ◽  
pp. 251-261 ◽  
Author(s):  
J. De Keyser ◽  
M. Echim
Keyword(s):  
Electric Field ◽  
High Altitude ◽  
Electric Fields ◽  
Electric Potential ◽  
Equilibrium Configuration ◽  
Potential Difference ◽  
Field Profile ◽  
Electric Potential Difference ◽  
Electric Field Profile

Abstract. Strong localized high-altitude auroral electric fields, such as those observed by Cluster, are often associated with magnetospheric interfaces. The type of high-altitude electric field profile (monopolar, bipolar, or more complicated) depends on the properties of the plasmas on either side of the interface, as well as on the total electric potential difference across the structure. The present paper explores the role of this cross-field electric potential difference in the situation where the interface is a tangential discontinuity. A self-consistent Vlasov description is used to determine the equilibrium configuration for different values of the transverse potential difference. A major observation is that there exist limits to the potential difference, beyond which no equilibrium configuration of the interface can be sustained. It is further demonstrated how the plasma densities and temperatures affect the type of electric field profile in the transition, with monopolar electric fields appearing primarily when the temperature contrast is large. These findings strongly support the observed association of monopolar fields with the plasma sheet boundary. The role of shear flow tangent to the interface is also examined.

Effect of the Electric Field Profile on the Accuracy of E-FISH Measurements in Ionization Waves

2021 ◽  
Author(s):  
Tat Loon Chng ◽  
David Z. Pai ◽  
Olivier Guaitella ◽  
Svetlana M Starikovskaia ◽  
Anne Bourdon
Keyword(s):  
Electric Field ◽  
Intermediate Phase ◽  
Second Harmonic ◽  
Strong Dependence ◽  
Field Profile ◽  
Test Configuration ◽  
True Value ◽  
Field Evolution ◽  
Electric Field Profile ◽  
Fish Signal

Abstract Electric field induced second harmonic (E-FISH) generation has emerged as a versatile tool for measuring absolute electric field strengths in time-varying, non-equilibrium plasmas and gas discharges. Yet recent work has demonstrated that the E-FISH signal, when produced with tightly focused laser beams, exhibits a strong dependence on both the length and shape of the applied electric field profile (along the axis of laser beam propagation). In this paper, we examine the effect of this dependence more meaningfully, by predicting what an E-FISH experiment would measure in a plasma, using 2D axisymmetric numerical fluid simulations as the true value. A pin-plane nanosecond discharge at atmospheric pressure is adopted as the test configuration, and the electric field evolution during the propagation of the ionization wave (IW) is specifically analyzed. We find that the various phases of this evolution (before and up to the front arrival, immediately behind the front and after the connection to the grounded plane) are quite accurately described by three unique electric field profile shapes, each of which produces a different response in the E-FISH signal. As a result, the accuracy of an E-FISH measurement is generally predicted to be comparable in the first and third phases of the IW evolution, and significantly poorer in the second (intermediate) phase. Fortunately, even though the absolute error in the field strength at certain time instants could be large, the overall shape of the field evolution curve is relatively well captured by E-FISH. Guided by the simulation results, we propose a procedure for estimating the error in the initial phase of the IW development, based on the presumption that the starting field profile mirrors that of its corresponding Laplacian conditions before evolving further. We expect that this approach may be readily generalized and applicable to other IW problems or phenomena, thus extending the utility of the E-FISH diagnostic.

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