Threshold Voltage Fluctuations in Localized Charge-Trapping Nonvolatile Memory Devices

2012 ◽  
Vol 59 (3) ◽  
pp. 596-601 ◽  
Author(s):  
Meir Janai ◽  
Meng Chuan Lee
Keyword(s):  
Threshold Voltage ◽  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Memory Devices ◽  
Voltage Fluctuations ◽  
Nonvolatile Memory Devices

Investigation of Channel Hot Electron Injection by Localized Charge-Trapping Nonvolatile Memory Devices

2004 ◽  
Vol 51 (3) ◽  
pp. 444-451 ◽  
Author(s):  
E. Lusky ◽  
Y. Shacham-Diamand ◽  
G. Mitenberg ◽  
A. Shappir ◽  
I. Bloom ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Electron Injection ◽  
Memory Devices ◽  
Hot Electron ◽  
Hot Electron Injection ◽  
Nonvolatile Memory Devices

Organic nonvolatile memory devices with charge trapping multilayer graphene film

2012 ◽  
Vol 23 (10) ◽  
pp. 105202 ◽  
Author(s):  
Yongsung Ji ◽  
Minhyeok Choe ◽  
Byungjin Cho ◽  
Sunghoon Song ◽  
Jongwon Yoon ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Graphene Film ◽  
Charge Trapping ◽  
Multilayer Graphene ◽  
Memory Devices ◽  
Nonvolatile Memory Devices

Two-Dimensional WSe2/Organic Acceptor Hybrid Nonvolatile Memory Devices Based on Interface Charge Trapping

2019 ◽  
Vol 11 (37) ◽  
pp. 34424-34429 ◽  
Author(s):  
Haining Liu ◽  
Menghua Cui ◽  
Chunhe Dang ◽  
Wen Wen ◽  
Xinsheng Wang ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Memory Devices ◽  
Two Dimensional ◽  
Interface Charge ◽  
Nonvolatile Memory Devices ◽  
Organic Acceptor

scholarly journals Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27699-27706 ◽  
Author(s):  
Manoj Kumar ◽  
Hakyung Jeong ◽  
Dongjin Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Gate Insulator ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Insulator Interface ◽  
Ag Nanowires ◽  
Nonvolatile Memory Devices

Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.

Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices

2005 ◽  
Vol 86 (25) ◽  
pp. 251901 ◽  
Author(s):  
Sangmoo Choi ◽  
Hyundeok Yang ◽  
Man Chang ◽  
Sungkweon Baek ◽  
Hyunsang Hwang ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Nonvolatile Memory ◽  
Silicon Nanocrystals ◽  
Charge Trapping ◽  
Memory Devices ◽  
Nonvolatile Memory Devices ◽  
A Charge ◽  
Memory Characteristics

Al2O3 with Metal-Nitride nanocrystals as a charge trapping layer of MONOS-type nonvolatile memory devices

2005 ◽  
Vol 80 ◽  
pp. 264-267 ◽  
Author(s):  
S. Choi ◽  
S.S. Kim ◽  
H. Yang ◽  
M. Chang ◽  
S. Jeon ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Memory Devices ◽  
Metal Nitride ◽  
Nonvolatile Memory Devices ◽  
A Charge
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